Preparation method of silicon carbide fiber with boron nitride structure surface layer

A technology of silicon carbide fiber and polycarbosilane fiber, which is applied in the field of SiC fiber preparation, can solve the problems of large fiber damage, decrease in mechanical properties, weight loss of fiber, etc., and achieve the effect of improving performance, improving interface and low manufacturing cost
CN102634868AActive Publication Date: 2012-08-15NAT UNIV OF DEFENSE TECH

Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
NAT UNIV OF DEFENSE TECH
Publication Date
2012-08-15

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention discloses a preparation method of a silicon carbide fiber with a boron nitride structure surface layer. The preparation method comprises the following steps of: 1, preparing a continuous polycarbosilane fiber through melt spinning; 2, carrying out melting-free treatment; and 3, nitriding for decarbonizing, and then sintering at high temperature. The preparation method has the advantages of simple process, convenience in implementation and low cost. The silicon carbide fiber with the boron nitride structure surface layer, prepared by the invention, has good properties of resisting high temperature and oxidization, is improved in fiber interface, and is enhanced in property of a fiber reinforced composite.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to a method for preparing SiC fibers, in particular to a method for preparing silicon carbide (SiC) fibers with a surface layer of boron nitride (BN) structure. Background technique

[0002] SiC fiber is an excellent functional structural material and has broad application prospects in many fields such as aerospace and atomic energy. In the early 1980s, after silicon carbide (SiC) fiber represented by Nicalon entered the high-tech field, its unique high temperature resistance (1000°C) attracted the attention of the world's technological powers. At present, Japan has realized the industrial production of SiC fiber and imposed a technical blockade on my country. In China, after more than 30 years of exploration and research, the National University of Defense Technology has independently developed a series of SiC fibers, including KD-I SiC fibers, KD-II SiC fibers, KA-SA high temperature-resistant SiC fibers and KD-X wave-absorbing...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More