Preparation method of silicon carbide fiber with boron nitride structure surface layer
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- NAT UNIV OF DEFENSE TECH
- Publication Date
- 2012-08-15
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Abstract
Description
technical field
[0001] The invention relates to a method for preparing SiC fibers, in particular to a method for preparing silicon carbide (SiC) fibers with a surface layer of boron nitride (BN) structure. Background technique
[0002] SiC fiber is an excellent functional structural material and has broad application prospects in many fields such as aerospace and atomic energy. In the early 1980s, after silicon carbide (SiC) fiber represented by Nicalon entered the high-tech field, its unique high temperature resistance (1000°C) attracted the attention of the world's technological powers. At present, Japan has realized the industrial production of SiC fiber and imposed a technical blockade on my country. In China, after more than 30 years of exploration and research, the National University of Defense Technology has independently developed a series of SiC fibers, including KD-I SiC fibers, KD-II SiC fibers, KA-SA high temperature-resistant SiC fibers and KD-X wave-absorbing...