P-I-N type polymer solar cell and preparation method thereof

A P-I-N, solar cell technology, applied in the field of polymer solar cells, can solve the problems of no anti-solvent, can not achieve reduction of carrier recombination, etc., to reduce recombination, improve anti-solvent performance, and good experimental repeatability Effect

Inactive Publication Date: 2012-08-22
NORTH CHINA ELECTRIC POWER UNIV (BAODING)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, ordinary electron transport materials and hole transport materials do not have the characteristics of solvent resistance...

Method used

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  • P-I-N type polymer solar cell and preparation method thereof
  • P-I-N type polymer solar cell and preparation method thereof
  • P-I-N type polymer solar cell and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Embodiment 1 (comparative example of embodiment 3)

[0035] The transparent conductive glass sputtered with indium tin oxide (ITO) was ultrasonically cleaned with detergent, deionized water, acetone, and isopropanol in sequence, dried with nitrogen, and spin-coated with PEDOT:PSS aqueous solution at 2000 rpm, 150 ° C Bake for 15 minutes and cool naturally to obtain an anodic finishing layer. Combine 10mg / mL of P088 with PC 60 A mixed solution of BM 1:1.3 (mass ratio) (dropped with 3% additive 1-8 diiodooctane) was directly spin-coated on the above-mentioned anode modification layer at a rotational speed of 1500 rpm, as a photoelectric active layer. Then at 4×10 -4 20nm of calcium and 100nm of aluminum were vacuum-evaporated under Pa as the cathode electrode. figure 2 The current-voltage curves of the device without light irradiation and with simulated sunlight irradiation of 100 mW / cm2 are given. The prepared device has an open circuit voltage of 0.620 volts, a sho...

Embodiment 2

[0036] Embodiment 2 (comparative example of embodiment 4)

[0037] The transparent conductive glass sputtered with indium tin oxide (ITO) was ultrasonically cleaned with detergent, deionized water, acetone, and isopropanol in sequence, dried with nitrogen, and spin-coated with PEDOT:PSS aqueous solution at 2000 rpm, 150°C Bake for 15 minutes and cool naturally to obtain an anodic finishing layer. Combine 10mg / mL of P088 with PC 70A mixed solution of BM 1:1.3 (mass ratio) (dropped with 3% additive 1-8 diiodooctane) was directly spin-coated on the above-mentioned hole collection layer at a rotational speed of 1500 rpm, as a photoelectric active layer. Then at 4×10 -4 20nm of calcium and 100nm of aluminum were vacuum-deposited under pa as the cathode. image 3 The current-voltage curves of the device without light irradiation and with simulated sunlight irradiation of 100 mW / cm2 are given. The prepared device has an open-circuit voltage of 0.630 volts, a short-circuit current...

Embodiment 3

[0039] The transparent conductive glass sputtered with indium tin oxide (ITO) was ultrasonically cleaned with detergent, deionized water, acetone, and isopropanol in sequence, dried with nitrogen, and spin-coated with PEDOT:PSS aqueous solution at 2000 rpm, 150 ° C Bake for 15 minutes and cool naturally to obtain an anodic finishing layer. Then 12mg / mL P088 solution was spin-coated on it at 4000rpm, baked at 150°C for 10min, then irradiated with ultraviolet light for 2min, and then 10mg / mL of P088 was mixed with PC 60 A mixed solution of BM 1:1.3 (mass ratio) (with 3% additive 1-8 diiodooctane added dropwise) was spin-coated thereon at a rotational speed of 1500 rpm, as a photoelectric active layer. Then at 4×10 -4 20nm of calcium and 100nm of aluminum were vacuum-evaporated under Pa as the cathode. Figure 4 The current-voltage curves of the device without light irradiation and with simulated sunlight irradiation of 100 mW / cm2 are given. The prepared device has an open cir...

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Abstract

The invention discloses a P-I-N type polymer solar cell and a preparation method thereof, which belong to the technical field of polymer solar cells. The P-I-N type polymer solar cell comprises a substrate, a transparent conductive metal oxide anode layer, an anode modifying layer, a P-type electron donor P layer, a photoelectric active I layer, an N-type electron donor N layer, a cathode modifying layer (or no), a low-work-content cathode layer, a metal wire and a load device sequentially stacked, wherein the photoelectric active I layer is formed by compounding an electron donor P and a donor N. P-type electron donor materials and N-type electron donor materials are introduced to a polymer solar cell structure by means of solution processing and cross linking, compound of carriers on anode and cathode interfaces is greatly reduced, and device performance is improved remarkably. Further, the P-I-N type polymer solar cell and the preparation method thereof have the advantages of simple preparation process, low cost, high experimental repeatability, suitableness for massive industrial production and the like.

Description

technical field [0001] The invention belongs to the technical field of polymer solar cells, and in particular relates to a P-I-N type polymer solar cell and a preparation method thereof. Background technique [0002] Organic and polymer thin-film solar cells, which have emerged in recent years, have attracted much attention due to their outstanding advantages such as low cost, light weight, simple manufacturing process, and large-area flexible devices. By optimizing the design and synthesis of new polymer donor materials and fullerene derivative acceptor materials and optimizing the microphase separation structure of the donor and acceptor in the active layer, the photoelectric conversion efficiency of bulk heterojunction polymer solar cells is significantly increased to 8 %, close to the level of amorphous silicon cells. However, in traditional bulk heterojunction polymer solar cells, because the electron donor in the blend layer is in contact with the cathode interface, t...

Claims

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Application Information

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IPC IPC(8): H01L51/46H01L51/44H01L51/48C08J3/28C08J3/24
CPCY02E10/549Y02P70/50
Inventor 谭占鳌徐琦钱德平王福芝
Owner NORTH CHINA ELECTRIC POWER UNIV (BAODING)
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