Etching solution composition for transparent conductive film

Abstract

The present invention provides an etching solution composition for etching crystalline transparent conductive films which enables etching of a crystalline ITO film without damaging copper and / or copper alloy used in electrode materials. Etching solution compositions for etching crystalline transparent conductive films described herein is consist of an aqueous solution that comprises 1-10 wt % of a fluorine compound.

Description

technical field [0001] The present invention relates to an etchant composition used for a transparent conductive film in a display device of an FPD (flat panel display), a solar cell, an electrode of a touch panel, and the like. More specifically, it relates to the etching of transparent conductive films for touch panels using organic polymer films such as polyethylene terephthalate (PET) as substrates, transparent conductive films, and copper and / or copper alloy films. liquid composition. Background technique [0002] The transparent conductive film is a light-transmitting conductive material used in FPDs such as LCDs (liquid crystal displays) and ELDs (electroluminescence displays), solar cells, touch panels, and the like. These transparent conductive films include indium tin oxide, indium oxide, tin oxide, zinc oxide, etc., and indium tin oxide (hereinafter referred to as ITO) is mainly widely used. [0003] Conventionally, an amorphous ITO film formed on a glass substr...

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Problems solved by technology

However, these etching solutions have the following problem: when used as an etching solution for an ITO film having copper and / or a copper alloy film as a wiring material, such as an ITO film for a touch panel, they are not practically sufficient.

This method aims to improve the removal effect of etching residues, and is limited to the etching of amorphous ITO films, and this method cannot etch crystalline ITO films

[0011] In addition, Patent Document 4 proposes an etching solution for simultaneously etching silver and ITO, but it also contains hydrofluoric acid and nitric acid, and damage to copper cannot be avoided, so it cannot be used for films containing copper and / or copper alloys.

[0012] Disclose the etchant of crystalline transparent conductive film among the patent document 5, record the combination of hydrofluoric acid and inorganic salt, but can not obtain the etching speed of practical ITO film, and because hydrofluoric acid reacts with inorganic salt, for example in Calcium fluoride precipitates in the etchant using hydrofluoric acid and calcium chloride described in Table 2 of this document, resulting in the generation of unnecessary residues.

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