Matte manufacturing solution of solar energy single crystal silicon wafers and its preparation method

A single crystal silicon wafer and texturing liquid technology, which is applied in the field of texturing liquid for solar monocrystalline silicon wafers and its preparation, can solve problems such as explosion, environmental pollution, toxicity, etc. The effect of increasing wettability

Active Publication Date: 2012-10-17
李康
View PDF2 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, NaOH, IPA and NaOH are mainly used in the domestic industrial production process. 2 SiO 3 The alkaline solution of the system performs surface texture treatment on monocrystalline silicon wafers. The domestic monocrystalline silicon texturing technology is also researched and developed based on this, but NaOH, IPA and Na 2 SiO 3 In the system (1) IPA has high volatility, so it must be added continuously, which makes the texturing system change greatly with the continuous production, which affects the stability and continuity of production, and is easy to The formation of explosive mixed gas has potential safety hazards. In addition, IPA is expensive, toxic, and pollutes the environment. (2) NaOH tends to leave residues on the surface of single crystal silicon wafers during the texturing process, affecting appearance and photoelectric conversion efficiency.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Matte manufacturing solution of solar energy single crystal silicon wafers and its preparation method
  • Matte manufacturing solution of solar energy single crystal silicon wafers and its preparation method
  • Matte manufacturing solution of solar energy single crystal silicon wafers and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] First add 85g of 18 megohm water into the solvent preparation device, add 2g of triethanolamine, 2.5g of tetramethylammonium hydroxide (TMAH), 8g of R as CH 3 Surfactant (manufacturer of surfactant is Guangxi Baise Yuanshan Co., Ltd., grade is industrial grade.), 2.5g sodium silicate, stir for 35 minutes, make it dissolve completely under 25 ℃, after filtering with 200 mesh filter screen The clear liquid is the velvet making liquid.

[0030] Take P-type (100) Czochralski solar monocrystalline silicon wafers for surface cleaning, put them into a plastic reactor filled with texturing liquid for chemical corrosion (surface texturing is also called surface texturing), and control the texture of texturing. The temperature is 80°C, take it out after 25 minutes of reaction, wash with 18 megohm water, and finish the texture. The texture of the texture obtained after texture is as follows: figure 1 and figure 2 As shown, it can be seen from the figure that a pyramid suede str...

Embodiment 2

[0033] First add 80.0g of 18 megohm water into the solvent preparation device, add 5.0g of triethanolamine, 2.0g of tetramethylammonium hydroxide (TMAH), 10.0g of R as C 2 h 5 Surfactant, 3g of sodium silicate, stirred for 25 minutes, completely dissolved at 15°C, filtered through a 200-mesh filter to obtain the finished texturing solution.

[0034] Take a P-type (100) Czochralski solar monocrystalline silicon wafer for surface cleaning, put it into the texturing solution prepared by the above method, react at a temperature of 90°C for 25 minutes, take it out, wash it with 18 megohm water, and finish the texturing .

Embodiment 3

[0036] First add 90g of 18 megohm water into the solvent preparation device, add 1g of triethanolamine, 2.0g of tetramethylammonium hydroxide (TMAH), 2g of surfactant whose R is H, and 5g of sodium silicate while stirring, and stir for 35 minutes, 5 Dissolve it completely at ℃, and filter through a 200-mesh filter to obtain the finished texturing liquid.

[0037] Take a P-type (100) Czochralski solar monocrystalline silicon wafer for surface cleaning, put it into the texturing solution prepared by the above method, react at a temperature of 70°C for 20 minutes, take it out, wash it with 18 megohm water, and finish the texturing .

[0038] Table 1

[0039] Test items

[0040] Table 1 is a comparison of the uniformity of the size of the pyramids on the solar monocrystalline silicon wafer in Example 1, Example 2, and Example 3, whether the pyramids cover the entire surface, and the height range of the pyramids. From the comparison of Example 1, Example 2, and Example...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
heightaaaaaaaaaa
heightaaaaaaaaaa
Login to view more

Abstract

The invention relates to a matte manufacturing solution of solar energy single crystal silicon wafers and its preparation method. The method comprises the following steps: adding 18megohm water in a solvent preparation device, stirring and successively adding triethanolamine, tetramethyl ammonium hydroxide (TMAH), a surfactant and sodium silicate, stirring for 20-40 minutes, completely dissolving under the temperature of 5-25 DEG C, and filtering to obtain the finished product matte manufacturing solution. The surface of the single crystal silicon wafers forms a suede structure full of pyramids. The suede structure formed on the solar cells can reduce the reflectivity of the surface, form a light trap in the internal part of the cell, and increase the transition efficiency of the solar cell substantially.

Description

technical field [0001] The invention relates to a texturizing liquid for solar monocrystalline silicon chips and a preparation method thereof. Background technique [0002] In recent years, the photovoltaic industry has grown rapidly. In 2008, the world's solar cell production reached 6000MW, and in 2009, the world's solar cell production exceeded 10GW. The average annual growth rate of solar cells / modules in the past 10 years is 42.7%, and the average annual growth rate in the past 5 years is 51%. It has entered the era of selling energy. Strong market demand has prompted major companies to expand capacity. China's solar cells The industry has also developed by leaps and bounds. At present, NaOH, IPA and NaOH are mainly used in the domestic industrial production process. 2 SiO 3 The alkaline solution of the system performs surface texture treatment on monocrystalline silicon wafers. The domestic monocrystalline silicon texturing technology is also researched and develope...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/10H01L31/18C30B33/10
CPCY02P70/50
Inventor 李康王斌
Owner 李康
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap