Method for manufacturing back electrode of crystalline silicon solar cell by using local aluminum back surface field structure
A solar cell, crystalline silicon technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of complex manufacturing process and high chemical cost, achieve strong practicability and improve photoelectric conversion efficiency.
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Embodiment 1
[0035] This embodiment provides a method for preparing the back electrode of a crystalline silicon solar cell by using a local aluminum back field structure, and the specific steps are as follows:
[0036] 1) Select a lightly doped p-type single crystal silicon wafer with a resistivity of 0.5-6 Ω·cm, place it in a texturing tank, and place it in a 15% by weight sodium hydroxide deionized aqueous solution, Carrying out surface texturing at a temperature of 78°C to form a suede structure;
[0037] 2) Cleaning the surface of the silicon wafer with a chemical solution, the chemical solution is a mixed aqueous solution of hydrofluoric acid and hydrochloric acid, the cleaning time is 2 minutes, and the temperature is 25° C.;
[0038] 3) After cleaning the above textured sheet, place it in a furnace tube at 870°C for phosphorus diffusion to prepare an n-type emitter. The diffusion time is 30 minutes, and the square resistance of the emitter after diffusion is 80 Ohm / sq?;
[0039] 4)...
Embodiment 2
[0052] This embodiment provides a method for preparing the back electrode of a crystalline silicon solar cell by using a local aluminum back field structure, and the specific steps are as follows:
[0053] 1) Select a lightly doped p-type single crystal silicon wafer with a resistivity of 0.5-6 Ω·cm, place it in a texturing tank, and place it in a deionized aqueous solution of potassium hydroxide with a content of 15% by weight, Carrying out surface texturing at a temperature of 85°C to form a suede structure;
[0054] 2) Cleaning the surface of the silicon wafer with a chemical solution, the chemical solution is a mixed aqueous solution of hydrofluoric acid and sulfuric acid, the cleaning time is 2 minutes, and the temperature is 25° C.;
[0055] 3) After cleaning the above textured sheet, place it in a furnace tube at 870°C for phosphorus (P) diffusion to prepare an n-type emitter. The diffusion time is 30 minutes, and the square resistance of the emitter after diffusion is ...
Embodiment 3
[0069] This embodiment provides a method for preparing the back electrode of a crystalline silicon solar cell by using a local aluminum back field structure, and the specific steps are as follows:
[0070] 1) Select a lightly doped p-type single crystal silicon wafer with a resistivity of 0.5-6 Ω·cm, place it in a texturing tank, and place it in a 15% by weight sodium hydroxide deionized aqueous solution, Carrying out surface texturing at a temperature of 78°C to form a suede structure;
[0071] 2) Cleaning the surface of the silicon wafer with a chemical solution, the chemical solution is a mixed aqueous solution of hydrofluoric acid and hydrochloric acid, the cleaning time is 2 minutes, and the temperature is 25° C.;
[0072] 3) After cleaning the above textured sheet, place it in a furnace tube at 870°C for phosphorus (P) diffusion to prepare an n-type emitter. The diffusion time is 30 minutes, and the square resistance of the emitter after diffusion is 80 Ohm / sq?;
[0073...
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Abstract
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