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Method for preparing zinc oxide nano wire/pipe arrays with controllable diameters and heights on indium tin oxide (ITO) glass

A technology of zinc oxide nanowires and nanowire arrays, applied in the field of zinc oxide nanowire/tube arrays, can solve the problems of complex precursor reactants, low crystallinity, and easy pollution of products, and achieve short preparation time and simple operation , high yield effect

Inactive Publication Date: 2012-10-24
SUZHOU WENHAO MICROFLUIDIC TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The method has mild reaction conditions, low cost, and uniform products, but the required precursor reactants are relatively complex, and the products are easily polluted, difficult to purify, and have low crystallinity.

Method used

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  • Method for preparing zinc oxide nano wire/pipe arrays with controllable diameters and heights on indium tin oxide (ITO) glass
  • Method for preparing zinc oxide nano wire/pipe arrays with controllable diameters and heights on indium tin oxide (ITO) glass
  • Method for preparing zinc oxide nano wire/pipe arrays with controllable diameters and heights on indium tin oxide (ITO) glass

Examples

Experimental program
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Effect test

Embodiment 1

[0040] followed by trichlorethylene (C 2 HCl 3 ), acetone (CH 3 COCH 3 ), isopropanol (CH 3 CH(OH)CH) ultrasonic heating (70 ℃) cleaning ITO glass substrate for 15min, then rinse with ultrapure water and blow dry with nitrogen. 0.1M zinc acetate and 0.02M acetic acid were sequentially dissolved in a mixture of ethanol and distilled water (1:3, v / v), mixed evenly, and prepared as a seed layer precursor solution. Place the clean ITO glass on an electric heating plate, and when the heating temperature reaches 350°C, start to spray the misty seed layer precursor solution for 2 minutes to obtain a ZnO seed layer with a thickness of 20nm. Put the sample into a tube furnace and heat treatment at 350°C for 60min to make a ZnO seed layer film. Will 5x10 -4 M ZnCl 2Prepare ZnO electrodeposition solution with 1M KCl, and pass oxygen through the solution for 10 minutes at a constant temperature of 80°C. During the electrodeposition process, the solution was always bubbled with oxy...

Embodiment 2

[0042] followed by trichlorethylene (C 2 HCl 3 ), acetone (CH 3 COCH 3 ), isopropanol (CH 3 The ITO glass substrate was cleaned by ultrasonic heating (80°C) in CH(OH)CH) solvent for 10 min, rinsed with ultrapure water, and dried with nitrogen. 0.1M zinc acetate and 0.02M acetic acid were sequentially dissolved in a mixture of ethanol and distilled water (1:3v / v), mixed evenly, and prepared as a seed layer precursor solution. Place the clean ITO glass on an electric heating plate, heat the temperature to 400°C, and start spraying the precursor solution of the misty seed layer for 5 minutes to obtain a ZnO seed layer with a thickness of 50nm. Put the ZnO seed layer into a tube furnace, heat treatment at 400°C for 45min, and make a ZnO seed layer thin film. Will 5x10 -4 M ZnCl 2 After mixing with 3.4M KCl solution, it is formulated as a ZnO electrodeposition solution, and the solution is passed through oxygen for 15 minutes at a constant temperature of 70°C. During the el...

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Abstract

The invention relates to a method for preparing zinc oxide nano wire / pipe arrays with controllable diameters and heights on indium tin oxide (ITO) glass. The method comprises that a zinc oxide seeding layer film is prepared on the ITO glass through a spray pyrolysis method, the zinc oxide seeding layer film is subjected to sedimentation in a zinc chloride solution through an electrochemistry method, a highly-oriented zinc oxide nano wire is obtained, zinc oxide nano wire arrays are immersed in a potassium chloride solution for etching, and zinc oxide nano pipe arrays are obtained. The method has the advantages of being low in material cost, environment-friendly, simple in equipment and process, short in preparation period and easy to synthesize. The prepared zinc oxide nano wire and the prepared zinc oxide nano pipe are composed of zinc oxide nanocrystalline, heights and diameters can be controlled, and the zinc oxide nano wire and the zinc oxide nano pipe have good optical performance and electrical performance and can be widely used in fields such as nanocrystalline solar cells and nano sensors.

Description

technical field [0001] The invention relates to a method for preparing a zinc oxide nanowire / tube array with adjustable diameter and height on ITO glass. The array film can be applied to the fields of nanocrystalline solar cells, nanosensors and the like. Background technique [0002] As a new type of semiconductor material, zinc oxide (ZnO) can obtain high-efficiency excitonic luminescence at room temperature, and has strong free exciton transition luminescence in the ultraviolet band. In various one-dimensional nanostructures, due to the huge surface area of ​​ZnO nanowires, surface effects, small size effects and macroscopic quantum tunneling effects are produced. Raw material resources are abundant, cheap, non-toxic and harmless to the environment, suitable for epitaxial growth of thin films, and have broad application prospects in the field of information optoelectronics, becoming a new research hotspot in recent years. [0003] Currently, methods for preparing one-dim...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/62C30B29/60C30B29/16C30B7/12
Inventor 王晓东
Owner SUZHOU WENHAO MICROFLUIDIC TECH CO LTD