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Graphene mode-locked optically pumped thin disc semiconductor laser

A semiconductor and graphene technology, applied in the field of graphene mode-locked optically pumped thin-film semiconductor lasers, achieves the effects of short saturable recovery time, simple structure, and narrow output pulse width

Inactive Publication Date: 2012-11-07
BEIJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, how to set up the graphene saturable element to effectively generate ultrashort pulse light is still in the exploration stage

Method used

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  • Graphene mode-locked optically pumped thin disc semiconductor laser
  • Graphene mode-locked optically pumped thin disc semiconductor laser
  • Graphene mode-locked optically pumped thin disc semiconductor laser

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] For the output pulsed light wavelength is the laser near 1 micron, the pump light source 1 is the semiconductor laser with the optical fiber output of 800-810nm wavelength; In the semiconductor gain chip 3, the semiconductor quantum well active layer 10 in the periodic quantum well layer is InGaAs, wherein the In content is 0.18-0.20, the quantum well barrier layer 11 in the periodic multi-quantum well layer is GaAs or AlGaAs, and the number of quantum wells is 6-16; the semiconductor Bragg mirror layer 12 is 26-28 For GaAs / AlAs. The semiconductor gain chip 3 uses a heat sink 4 to remove excess heat and control the chip temperature. The schematic diagram of the structure of the cooling device 4 is as Figure 4 As shown, the semiconductor gain chip is pasted on the heat sink 18 with heat-conducting glue, and the heat sink is copper or pure copper; the heat sink 18 is connected to the semiconductor refrigerator 19 with In to control the chip temperature; the semiconducto...

Embodiment 2

[0028] It is 630-670nm semiconductor laser that the pump light source in embodiment 1 is changed into wavelength, the periodic multi-quantum well layer is changed into GaAs / AlGaAs quantum well and potential barrier, and graphene saturable absorption mirror is changed into the absorption of carbon nanotube material The mirror can obtain the mode-locked pulse light output near 850nm.

Embodiment 3

[0030] It is the semiconductor laser of 808nm that the pumping light source among the embodiment 1 is changed into, the periodic multi-quantum well layer is changed into GaInNAs / GaAs quantum well and potential barrier, and the graphene saturable absorbing mirror is changed into the carbon nanotube material absorbing mirror, Then the mode-locked pulse light output near 1220nm can be obtained.

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Abstract

The invention relates to a graphene mode-locked optically pumped thin disc semiconductor laser, belonging to the technical field of semiconductor lasers. A V-shaped resonant cavity and a pump light source. The resonant cavity consists of an emergent end lens, a middle reflecting mirror and an end surface reflecting mirror, wherein the emergent end lens is an output coupling lens, the middle reflecting mirror adopts a semiconductor gain chip which is installed on a radiating device and the pump light source irradiates the semiconductor gain chip through a lens group. The graphene mode-locked optically pumped thin disc semiconductor laser is characterized in that the end surface reflecting mirror is a graphene saturable absorber mirror and the graphene saturable absorber mirror comprises a graphene saturable absorbing layer and a multilayer dielectric film reflecting mirror layer. Since the saturable absorber mirror uses a zero-band-gap graphene material for making an absorbing area, saturable absorbing bandwidth does not have wavelength selectivity, the saturable restoration time is very short and ultrashort pulse output of self-starting picoseconds or femtoseconds is easy to produce. The entire system is proved to have the advantages of simple structure, easiness in adjustment, narrow output pulse width and high repeating frequency.

Description

technical field [0001] The invention relates to a graphene mode-locked optical pump thin slice semiconductor laser, belonging to the technical field of semiconductor lasers. Background technique [0002] Graphene Mode-locked Optically Pumped Thin Disk Semiconductor Lasers (GML-OPDSL) takes into account the advantages of surface-emitting semiconductor lasers, edge-emitting semiconductor lasers and solid-state lasers, and has a good spot mode TEM00 (compared with edge-emitting semiconductor lasers) and higher output power (compared with surface-emitting semiconductor lasers), and the wavelength is easily designed into different bands (compared with solid-state lasers); in addition, there is a The great advantage is that the gain chip and cavity mirror of GML-OPDSL are separated, and tuning components can be added to the laser cavity to obtain different functions. When a graphene saturable absorbing element is added to the cavity, a passive mode-locking mechanism is introduced...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/06H01S5/065
Inventor 宋晏蓉于振华张晓田金荣张鹏
Owner BEIJING UNIV OF TECH
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