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Preparation method for barium strontium titanate film taking MgO as buffer layer

A barium strontium titanate thin film and thin film technology, which is applied in the field of preparation of barium strontium titanate thin film, can solve the problems of large loss and achieve the effect of low dielectric loss and high dielectric constant

Inactive Publication Date: 2014-04-02
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, direct fabrication of barium strontium titanate thin films on substrates is usually lossy

Method used

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  • Preparation method for barium strontium titanate film taking MgO as buffer layer
  • Preparation method for barium strontium titanate film taking MgO as buffer layer
  • Preparation method for barium strontium titanate film taking MgO as buffer layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] In polycrystalline Al 2 o 3 Ba with MgO buffer layer prepared on the substrate x Sr 1-x TiO 3 Ferroelectric thin film, where x=0.6.

[0040] a. The chemical raw materials used are magnesium acetate, acetylacetone, glacial acetic acid and ethylene glycol ether. First dissolve 0.6068g of magnesium acetate in an appropriate amount of glacial acetic acid solution and heat to boiling, then stop heating, and cool to room temperature; fully mix acetylacetone and 15ml of ethylene glycol ethyl ether with 2 times the amount of magnesium acetate, and This mixed solution was added to the acetic acid solution of magnesium acetate, and finally glacial acetic acid was added to adjust the concentration of Mg ions in the final solution to 0.1 mol / L, and stirred for 1 hour to obtain a precursor solution of MgO. After standing for 24 hours, it is used to prepare the film;

[0041] b. The chemical raw materials used are barium acetate, strontium acetate, tetra-n-butyl titanate, acety...

Embodiment 2

[0048] In polycrystalline Al 2 o 3 Ba with MgO buffer layer prepared on the substrate x Sr 1-x TiO 3 Ferroelectric thin film, where x=0.6.

[0049] a. The chemical raw materials used are magnesium acetate, acetylacetone, glacial acetic acid and ethylene glycol ether. Dissolve 1.3000g of magnesium acetate in an appropriate amount of glacial acetic acid solution and heat to boiling, then stop heating, and cool to room temperature; fully mix acetylacetone and 15ml of ethylene glycol ethyl ether, which is twice the amount of magnesium acetate, and The mixed solution was added to the acetic acid solution of magnesium acetate, and finally glacial acetic acid was added to adjust the Mg ion concentration of the final solution to 0.2 mol / L, and stirred for 1 hour to obtain a MgO precursor solution. After standing for 24 hours, it is used to prepare the film;

[0050] b. The chemical raw materials used are barium acetate, strontium acetate, tetra-n-butyl titanate, acetylacetone an...

Embodiment 3

[0059] In polycrystalline Al 2 o 3 Ba with MgO buffer layer prepared on the substrate x Sr 1-x TiO 3 Ferroelectric thin film, where x=0.6.

[0060] a. The chemical raw materials used are magnesium acetate, acetylacetone, glacial acetic acid and ethylene glycol ether. First dissolve 1.9495g of magnesium acetate in an appropriate amount of glacial acetic acid solution and heat to boiling, then stop heating, and cool to room temperature; fully mix acetylacetone and 15ml of ethylene glycol ethyl ether with 2 times the amount of magnesium acetate, and The mixed solution was added to the acetic acid solution of magnesium acetate, and finally glacial acetic acid was added to adjust the Mg ion concentration of the final solution to 0.3 mol / L, and stirred for 1 hour to obtain a MgO precursor solution. After standing for 24 hours, it is used to prepare the film;

[0061] b. The chemical raw materials used are barium acetate, strontium acetate, tetra-n-butyl titanate, acetylacetone...

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Abstract

The present invention belongs to the field of electronic materials, and particularly relates to a preparation method for a barium strontium titanate film. The present invention provides a preparation method for the barium strontium titanate film, comprising the steps of: a, preparing an MgO precursor solution; b, preparing a BaxSr1-xTiO3 precursor solution, wherein x=0.4-0.9; c, drying a substrate after cleaning; d, rotationally coating the MgO precursor solution on the substrate obtained in step c for more than once to obtain a first layer film; e, rotationally coating the BaxSr1-xTiO3 precursor solution on the first layer film obtained in step d for more than once; f, annealing the film obtained in step e to obtain the barium strontium titanate film. The barium strontium titanate ferroelectric film prepared by the invention has the characteristics of a low dielectric loss and a high dielectric constant.

Description

technical field [0001] The invention belongs to the field of electronic materials, in particular to a preparation method of barium strontium titanate thin film. Background technique [0002] Ferroelectric thin film refers to a thin film material with ferroelectricity and a thickness of tens of nanometers to several microns. It has good ferroelectricity, piezoelectricity, pyroelectricity and other characteristics, and can be widely used in microelectronics, Optoelectronics, microelectromechanical systems and other fields are one of the current research hotspots. Among them, barium strontium titanate (BST)-based ferroelectric materials have good dielectric properties and a continuously adjustable dielectric constant with the change of the applied electric field, and are widely used in the field of electronic ceramics, especially in the field of microwave devices. development prospects. However, for key devices in the microwave field such as phase shifters and filters, approp...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B41/85
Inventor 翟继卫边延龙王辉
Owner TONGJI UNIV