Method for recovering indium from waste liquid crystal panels through acid leaching-cation exchange resin adsorption technology
A technology of cation exchange and resin adsorption, which is applied in the field of recovery of indium from waste liquid crystal panels by acid leaching-cation exchange resin adsorption process, can solve the problems of low recovery process efficiency and high impurity content, and achieve efficient recovery, low impurity content, and process flow concise effect
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Examples
Embodiment 1
[0064] 1) Weigh 100kg of waste liquid crystal panel, cut the waste liquid crystal panel into 1~4cm×3~4cm size, soak it in 2L acetone at room temperature for 80min, peel off the glass substrate and polarizer, and then peel off the stripped glass substrate Air dry for about 1h.
[0065] 2) Then pulverize the dried glass substrate to 80 mesh powder. The acetone solution is separated by filtration, the acetone is distilled out under atmospheric pressure for recycling, and the residue is collected separately and then incinerated at high temperature.
[0066] 3) Take 1 kg of the above-mentioned glass substrate powder and mix it with 4.5 L of dilute hydrochloric acid with a concentration of 6 mol / L, and reflux the reaction for 5 hours under stirring at 85 ° C to complete an acid leaching. After cooling to room temperature, dilute hydrochloric acid was separated by pressure filtration, supplemented with 6mol / L dilute hydrochloric acid to 4.5L, and used for the next acid leaching. Th...
Embodiment 2
[0073] The basic operation is the same as in Example 1, except that in step 3), dilute nitric acid is used instead of dilute hydrochloric acid for acid leaching, the concentration of dilute nitric acid is 3mol / L, the reaction temperature of acid leaching is 90°C, and the reaction time is 6h. The leaching rate of indium was measured to be 82.1wt%.
[0074] The purity of the crude indium obtained by replacing the indium in the filtrate with the zinc plate is 99wt%, and the recovery rate is 97.5wt% (relative to the indium content of the leaching solution).
Embodiment 3
[0076] The basic operation is the same as in Example 1, except that in step 3), the mixed acid of dilute hydrochloric acid and dilute nitric acid is used instead of dilute hydrochloric acid for acid leaching, wherein the concentration of dilute hydrochloric acid is 5mol / L, and the concentration of dilute nitric acid is 2mol / L L, the molar ratio of hydrochloric acid and nitric acid is 5:2, the reaction temperature of acid leaching is 85°C, and the reaction time is 5h. The leaching rate of indium was measured to be 93.2wt%.
[0077] The purity of the crude indium obtained by replacing the indium in the filtrate with the zinc plate is 99wt%, and the recovery rate is 97.5wt% (relative to the indium content of the leaching solution).
PUM
| Property | Measurement | Unit |
|---|---|---|
| Recovery rate | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More - R&D
- Intellectual Property
- Life Sciences
- Materials
- Tech Scout
- Unparalleled Data Quality
- Higher Quality Content
- 60% Fewer Hallucinations
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com