Large-scale integrated interconnection electromigration failure test method

Abstract

The invention discloses a large-scale integrated interconnection electromigration failure test method, mainly to solve the problems of high test cost and small test scale in the prior art. The large-scale integrated interconnection electromigration failure test method adopts the following technical scheme: an antifuse is formed on a welding plate of an integrated interconnection line through a plane integration process by using the characteristic that a resistor has a great change before and after the antifuse is programmed, interconnection and antifuse parallel structures are formed, a large amount of the interconnection and antifuse unit structures are connected in series to form a large-scale integrated interconnection multilink structure, and a test current source and a voltage meter are connected to the two ends of the multilink structure respectively and used for testing electromigration failure and recording voltage drop jump point time at the two ends of the multilink structure as interconnection failure time. The large-scale integrated interconnection electromigration failure test method has the advantages of low test cost and high test efficiency, and can be applied to testing large-scale integrated interconnection electromigration failure.

Description

technical field [0001] The invention belongs to the technical field of testing, and relates to reliability testing of semiconductor devices, in particular to a testing method for electromigration failure of large-scale integrated interconnection. Background technique [0002] With the continuous reduction of the feature size of integrated circuit devices and the increase of circuit complexity, the interconnection density, the number of layers and the working current density continue to increase, and the problem of electromigration failure of the interconnection caused by this is also more significant. One of the main failure phenomena is also one of the important contents of integrated circuit reliability evaluation. [0003] Existing research on electromigration failure of integrated circuit interconnection generally uses single-link structure interconnection for failure experiments, and the test efficiency is very low. In order to reduce the test cycle, multiple test devic...

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Problems solved by technology

[0003] Existing research on electromigration failure of integrated circuit interconnection generally uses single-link structure interconnection for failure experiments, and the test efficiency is very low. In order to reduce the test cycle, multiple test devices are often required to work at the same time, and the test cost is high; The method of building an external bypass circuit with diodes realizes the electromigration failure test of series structure multi-links, but this test device has obvious shortcomings, that is, when the Zener diode is connected in parallel with the entire multi-link interconnection, it will cause the test to fail to obtain every component contained in it. However, when Zener diodes are connected in parallel with each single-link interconnection, it will greatly limit the use of multi-link structures due to occupying too many pin resources of the interconnection test chip sample. scale

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