Organic semiconductor material containing dibenzothiophene sulfone, and preparation method and application thereof
A technology of organic semiconductor and thiophene sulfone, which is applied in the field of organic semiconductor materials, can solve problems such as device instability and achieve the effect of improving luminous efficiency
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[0042] The preparation method of the above-mentioned dibenzothiophene sulfone-containing organic semiconductor material, such as figure 1 As shown, the process steps are as follows:
[0043] Step S1, providing compounds A and B with the following structural formulas:
[0044] Compound A is That is, 3,7-dibromodibenzothiophene sulfone;
[0045] Compound B is (i.e., (10-arylanthracen-9-yl)boronic acid) or (i.e., (10-arylanthracen-9-yl)boronate)
[0046] In compound B, Ar- is an aromatic group, and the aromatic group is any one of the following structural formulas:
[0047]
[0048] Step S2, in an inert gas atmosphere (including a protective gas composed of nitrogen or argon), dissolve compounds A and B in an organic solvent containing a catalyst and a lye in a molar ratio of 1:2 to 1:3, and dissolve them at 60 to Carry out Suzuki reaction at 130°C for 8-48 hours, and the obtained structural formula is The described dibenzothiophene sulfone-containing organic semico...
Embodiment 1
[0058] This embodiment discloses an organic semiconductor material containing dibenzothiophene sulfone, that is, 3,7-bis(10-phenylanthracene-9-yl)dibenzothiophene sulfone (DPAFSO), the structural formula is as follows:
[0059]
[0060] Among them, Ar- is
[0061] Step 1, the preparation of 3,7-dibromodibenzothiophene sulfone:
[0062]
[0063] Dissolve 4 mmol of dibenzothiophene sulfone in 30 ml of concentrated H 2 SO 4 8.2mmol NBS was added at room temperature, and after stirring for 24h, the reaction solution was poured into water, filtered with suction, and washed with water and methanol. The remaining solid was recrystallized from chlorobenzene to give 3,7-dibromodibenzothiophene sulfone as a colorless needle solid. Yield: 49%. MS: m / z 374 (M + ).
[0064] Step 2, preparation of 3,7-bis(10-phenylanthracene-9-yl)dibenzothiophene sulfone (DPAFSO):
[0065]
[0066] Add 3,7-dibromodibenzothiophene sulfone 3mmol, 10-(phenylanthracene-9-boronic acid) 6.4mmol,...
Embodiment 2
[0069] This embodiment discloses an organic semiconductor material containing dibenzothiophene sulfone, that is, 3,7-bis(10-(4-methoxyphenyl)anthracene-9-yl)dibenzothiophene sulfone (DMOPAFSO), whose structural formula is as follows:
[0070]
[0071] Among them, Ar- is
[0072] Step 1: same as step 1 of embodiment 1;
[0073] Step 2: Preparation of 3,7-bis(10-(4-methoxyphenyl)anthracen-9-yl)dibenzothiophene sulfone (DMOPAFSO):
[0074]
[0075] Add 3,7-dibromodibenzothiophene sulfone 3mmol, 10-(4-methoxyphenyl)anthracene-9-boronate 6.5mmol, tetrakistriphenylphosphine palladium 0.09mmol into the reaction flask, pump After vacuum and nitrogen circulation for 3 times, the reaction system was in an oxygen-free state. Under the protection of nitrogen, 50 mL of ethylene glycol dimethyl ether and 2 mol / L of Cs were added. 2 CO 3 Aqueous solution 34ml, the mixture was heated to 75-80 ℃ reflux reaction for 24h.
[0076] After the reaction, the reaction solution was poured ...
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