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Method for peeling off hexagonal lamellar boron nitride and doping fluorine in hexagonal lamellar boron nitride

A boron nitride and fluorine doping technology, applied in chemical instruments and methods, nitrogen compounds, inorganic chemistry, etc., can solve problems such as polluted environment and complex preparation methods, and achieve simple preparation methods, abundant raw materials, and easy mass production. Effect

Inactive Publication Date: 2013-01-23
DONGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, the existing preparation methods of few-layer boron nitride materials include CVD method (Nano Lett. 2010, 10, 4134), chemical solution method (Appl. Complex, and some routes will pollute the environment, limiting its popularization and application, so many researchers have been looking for green and environmentally friendly synthetic routes

Method used

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  • Method for peeling off hexagonal lamellar boron nitride and doping fluorine in hexagonal lamellar boron nitride
  • Method for peeling off hexagonal lamellar boron nitride and doping fluorine in hexagonal lamellar boron nitride
  • Method for peeling off hexagonal lamellar boron nitride and doping fluorine in hexagonal lamellar boron nitride

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Embodiment 1

[0027] (1) Preparation of single-layer or few-layer hexagonal layered boron nitride by exfoliation with isopropanol: put 0.5 g of bulk boron nitride powder into a 100 mL round-bottomed flask, and add 50 mL of isopropanol. The above mixture was magnetically stirred at 50 °C for 24 h. After cooling to room temperature, the above mixture was sonicated in a low-power ultrasonic machine for 20 h. After the sonication, the obtained mixture was left to stand at room temperature for 1 day, and then the supernatant was extracted and centrifuged, and the centrifuged milky white precipitate was washed several times with acetone to clean the isopropanol. The obtained product was dried at 60°C and collected for future use.

[0028] (2) Few-layer or single-layer hexagonal boron nitride doped with fluorine: put 0.5g of few-layer hexagonal boron nitride into a 100mL round bottom flask, add 50mL of fluoroboric acid (HBF 4 ), the above-mentioned mixed solution was magnetically stirred at 50° ...

Embodiment 2

[0030] (1) Preparation of monolayer or few-layer hexagonal layered boron nitride by exfoliation with dimethyl sulfoxide: put 0.5 g of bulk boron nitride powder into a 100 mL round bottom flask, and add 50 mL of dimethyl sulfoxide. The above mixture was magnetically stirred at 50 °C for 24 h. After cooling to room temperature, the above mixture was sonicated in a low-power ultrasonic machine for 20 h. After the sonication, the resulting mixture was left to stand at room temperature for 2 days, then the supernatant was extracted and centrifuged, and the centrifuged milky white precipitate was washed several times with acetone to clean the isopropanol. The obtained product was dried at 60°C and collected for future use.

[0031] (2) Few-layer or single-layer hexagonal boron nitride doped with fluorine: put 0.5g of few-layer hexagonal boron nitride into a 100mL round bottom flask, add 50mL of fluoroboric acid (HBF 4 ), the above-mentioned mixed solution was magnetically stirred ...

Embodiment 3

[0033] (1) Preparation of monolayer or few-layer hexagonal layered boron nitride by exfoliation with N-methylpyrrolidone: put 0.2 g of bulk boron nitride powder into a 100 mL round-bottomed flask, and add 30 mL of N-methylpyrrolidone. The above mixture was magnetically stirred at 50 °C for 24 h. After cooling to room temperature, the above mixture was sonicated in a low-power ultrasonic machine for 20 h. After the sonication, the resulting mixture was left standing at room temperature for 3 days, then the supernatant was extracted and centrifuged, and the centrifuged milky white precipitate was washed several times with acetone to clean the isopropanol. The obtained product was dried at 60°C and collected for future use.

[0034] (2) Few-layer or single-layer hexagonal boron nitride doped with fluorine: put 0.2g of few-layer hexagonal boron nitride into a 100mL round bottom flask, add 30mL of fluoroboric acid (HBF 4 ), the above-mentioned mixed solution was magnetically stir...

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Abstract

The invention relates to a method for peeling off hexagonal lamellar boron nitride and doping fluorine in the hexagonal lamellar boron nitride. The method for peeling off hexagonal lamellar boron nitride comprises the steps of: (1) adding a polar organic solvent into boron nitride powder, magnetically stirring for 20 to 30h at 45 to 55 DEG. C to obtain a mixed solution, performing ultrasound after the mixed solution is cooled to the room temperature, then standing for 1 to 3 days, centrifuging supernatant, washing the centrifuged milky white precipitate by acetone, and finally drying to obtain the product; and (2) adding fluoboric acid into the product obtained in the step (1), magnetically stirring for 5 to 10h at 45 to 55 DEG. C, naturally cooling to the room temperature, then centrifuging the obtained product, washing with deionzied water, and finally drying. The preparation method disclosed by the invention is simple, environment-friendly, low in equipment requirements, abundant in raw materials, and convenient for mass production; and the electrical conductivity of the fluorine doped boron nitride obtained by the invention is enhanced.

Description

technical field [0001] The invention belongs to the modification field of boron nitride, and in particular relates to a stripping method of hexagonal layered boron nitride and its fluorine doping method. Background technique [0002] Layered materials in nanomaterials have attracted extensive attention in the scientific research community due to their unique physical and chemical properties and many potential applications. The research results from graphite to single-layer graphene are a good example, especially its breakthrough in the application of semiconductor devices. Hexagonal layered boron nitride is a typical III-V compound, and its crystal structure is very similar to graphite. Boron nitride has excellent physical and chemical properties: high temperature resistance, oxidation resistance, chemical corrosion resistance, self-lubrication, good machinability, high thermal conductivity, good neutron absorption performance and good wave transmission performance, etc., w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B21/064B82Y30/00
Inventor 胡俊青薛雅芳徐开兵胡向华刘倩蒋林彭彦玲韩林波
Owner DONGHUA UNIV
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