Preparation method of tungsten disulfide micron structure

Abstract

The invention belongs to the manufacturing field of semiconductor micron materials and particularly relates to a preparation method of a tungsten disulfide micron structure. The preparation method is characterized in that the chemical vapor deposition (CVD) method is adopted, thiourea and tungsten hexachloride (WC16) are taken as reaction sources, and the structure is obtained in a vacuum state at 750-950 DEG C. According to the preparation method, the thiourea and WC16 are placed in a constant temperature area and a low temperature area respectively, the reaction temperature of the WC16 is maintained at 750-950 DEG C, the temperature difference between the WC16 and the thiourea is maintained at 50-150 DEG C, the saturated vapor pressure is reached simultaneously at a specific temperature by using the temperature difference, and steam is generated for reaction. The preparation method has the advantages of being simple and easy to implement, environment-friendly, non-toxic and even in product size; particularly the non-toxic thiourea is used as the S source, the production cost and toxicity of S sources such as H2S are reduced, and the preparation method is economical and environment-friendly.

Description

technical field [0001] The invention belongs to the manufacturing category of semiconductor micron materials, in particular to a preparation method of tungsten disulfide micron structure, especially a preparation method of tungsten disulfide micron tube. Background technique [0002] The unique structure, excellent properties and many potential applications of inorganic fullerene nanomaterials have attracted widespread attention and research interest from scientists all over the world. Tungsten disulfide (WS 2 ) is usually a layered structure compound with a structure similar to graphite, which is WS 2 Layer stacking along the C axis (perpendicular to the sulfide layer), WS 2 In the layer is a strong covalent bond between the metal W atom and the S atom, and the WS 2 The layers are combined by weak van der Waals force. In addition, WS 2 As a semiconductor itself, it has important application potential in energy band engineering. More recently, scientists have proposed t...

AI Technical Summary

Problems solved by technology

In terms of preparation method, WS 2 The preparation of nanostructures mainly includes hydrothermal reaction method, chemical vapor deposition (CVD) method, ultrasonic oscillation method, microwave radiation method, WO 3 Reduction methods, etc., among which the more commonly used methods are hydrothermal method and CVD method, such as Y.D.Li et al. (JACS) prepared WS by hydrothermal method 2 nanotubes, but the preparation cycle of this method is long; Jifen Wu et al. (Material Lett.) prepared WS by hydrothermal method 2 Hollow spheres, but the use of reaction sources is expensive; Yan Qiu Zhu et al. (Chem.Mater.) prepared WS by CVD 2 Nanowires, but the reaction temperature used is high, and in the reaction process with H 2 As a source of S, S is highly toxic and seriously pollutes the reaction. Maja Remskar et al. used W 5 o 14 nanowires as precursors, in H 2 / H 2 Sulfurization in a mixed gas of S / Ar to obtain WS decorated with fullerene-like nanoparticles 2 nanotubes, but employs H during the reaction 2 / H 2 S / Ar mixed gas as S source and carrier gas, H 2 Explosive, H 2 S is highly toxic