Indium tin oxide (ITO) nano powder and preparation method thereof

An oxide powder and oxide technology, applied in tin oxide, nanotechnology and other directions, can solve the problems of slow reaction speed, long duration, and lack of availability, and achieve extremely fast reaction speed, uniform phase and good dispersibility. Effect

Inactive Publication Date: 2013-02-13
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] To sum up, the above method has a slow reaction speed, a long duration, and requires external heat energy; in addition, the requirement

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0030] Example 1

[0031] 1g of indium nitrate (In(NO 3 ) 3 ·NH 2 O), 0.0667g of stannous oxalate (SnC 2 O 4 ,), 1.0006g of urea (molecular formula CO(NH 2 ) 2 ) Mix to obtain a mixture; add 0.02g of complexing agent ethylenediaminetetraacetic acid (EDTA) (molecular formula C 10 H 16 N 2 O 8 ) Disperse and dissolve ultrasonically in ultrapure water to obtain a mixture solution; put it in a 90℃ oven and heat for 8 hours to make a precursor gel; put the precursor gel in a muffle furnace at a temperature of 10℃ / min The rate is heated from room temperature to 300°C, and after reaching 300°C, it is kept for 1 hour, and then taken out to obtain a yellow powdery sample.

[0032] After SEM observation, the dispersion is good, there is no obvious agglomeration, the particle size is uniform, the average particle size is about 60nm, and the composition measured by EDS is In, O and Sn.

Example Embodiment

[0033] Example 2

[0034] 0.1mol of indium hydroxide (In(OH) 3 ), 0.011mol of stannous nitrate (Sn(NO 3 ) 2 ), 0.0147mol glucose (C 6 H 12 O 6 ) Mix to obtain a mixture; add 1g of complexing agent PEG (HO(CH2CH2O) n H) Disperse and dissolve ultrasonically in ultrapure water to obtain a mixture solution; put it in a 70℃ oven and heat for 8 hours to form a precursor gel; put the precursor gel C into a muffle furnace at 10℃ / The rate of min was heated from room temperature to 450°C, and after reaching 450°C, it was kept for 0.5h, and then taken out to obtain a light yellow powdery sample.

[0035] Observed by SEM, the dispersion is good, there is no obvious agglomeration, the particle size is uniform, the average particle size is about 80nm, and the composition measured by EDS is In, O and Sn.

Example Embodiment

[0036] Example 3

[0037] 0.1mol of indium nitrate (In(NO 3 ) 3 ·NH 2 O,), 0.01mol of stannous nitrate (Sn(NO 3 ) 2 ), 0.00017mol of salicylic acid (C 7 H 6 O 3 ) Mix to obtain a mixture; add 0.6g of complexing agent citric acid (C 6 H 8 O 7 ) Disperse and dissolve ultrasonically in ultrapure water to obtain a mixture solution; put it in a 70℃ oven and heat it for 12 hours to form a precursor gel. Put the precursor gel in a muffle furnace at a temperature of 10℃ / min The rate was heated from room temperature to 500°C, and after reaching 500°C, it was kept for 1 hour, and then taken out to obtain a yellow-green powdery sample.

[0038] Observed by SEM, the dispersion is good, there is no obvious agglomeration, the particle size is uniform, the average particle size is about 85nm, and the composition measured by EDS is In, O and Sn.

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Abstract

The invention discloses nano indium tin oxide powder, which comprises an indium compound and a tin compound, wherein a mass ratio of indium oxide to tin oxide is 9:1; and the nano indium tin oxide powder is in an irregular elliptical spherical shape. The ITO nano powder obtained by a method for preparing the ITO nano powder is uniform in grain diameters and high in dispersibility, and the grain diameters are about 60 nanometers.

Description

technical field [0001] The invention relates to the technical field of manufacturing indium tin oxide (ITO) nano powder, in particular to an indium tin oxide (ITO) nano powder and a manufacturing method thereof. Background technique [0002] Indium tin oxide (ITO) is an indium (group III) oxide (In 2 o 3 ) and tin (Group IV) oxides (SnO 2 ) mixture, usually with a mass ratio of 90% In 2 o 3 with 10% SnO 2 . In film form, it is transparent and colorless, and its main characteristic is the combination of electrical conduction and optical transparency. ITO is currently mainly used in the production of liquid crystal displays, flat panel displays, plasma displays, touch screens, electronic paper, and organic light-emitting diodes, solar cells, antistatic coatings, and transparent conductive films for EMI shielding. [0003] The main preparation method of ITO film is to make ITO nanopowder first, then process it into a target material, and finally form the target material ...

Claims

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Application Information

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IPC IPC(8): C01G19/02B82Y40/00
Inventor 祝渊汤子康陈克新王岩徐明强
Owner SUN YAT SEN UNIV
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