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Indium tin oxide (ITO) nano powder and preparation method thereof

An oxide powder and oxide technology, applied in tin oxide, nanotechnology and other directions, can solve the problems of slow reaction speed, long duration, and lack of availability, and achieve extremely fast reaction speed, uniform phase and good dispersibility. Effect

Inactive Publication Date: 2013-02-13
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] To sum up, the above method has a slow reaction speed, a long duration, and requires external heat energy; in addition, the requirements for equipment in mass production are high. The existing technology cannot obtain powders with suitable particle size and uniform dispersion.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] 1g of indium nitrate (In(NO 3 ) 3 ·nH 2 O), 0.0667g of stannous oxalate (SnC 2 o 4 ,), 1.0006g of urea (molecular formula CO (NH 2 ) 2 ) mixed to obtain a mixture; add 0.02g of complexing agent ethylenediaminetetraacetic acid (EDTA) (molecular formula C 10 h 16 N 2 o 8 ) was ultrasonically dispersed and dissolved in ultrapure water to obtain a mixture solution; heated in an oven at 90°C for 8 hours to make a precursor gel; put the precursor gel into a muffle furnace, Heating rate from room temperature to 300°C, keeping at 300°C for 1h, and then taking it out to obtain a yellow powder sample.

[0032] After SEM observation, the dispersibility is good, there is no obvious agglomeration phenomenon, the particle size is uniform, and the average particle size is about 60nm. The components measured by EDS are In, O and Sn.

Embodiment 2

[0034] 0.1mol of indium hydroxide (In(OH) 3 ), 0.011mol of stannous nitrate (Sn(NO 3 ) 2 ), 0.0147mol of glucose (C 6 h 12 o 6 ) mixed to obtain a mixture; add 1 g of complexing agent PEG (HO(CH2CH2O) n H) Ultrasonic dispersion and dissolution in ultrapure water to obtain a mixture solution; put it in a 70°C oven and heat it for 8 hours to make a precursor gel; put the precursor gel C in a muffle furnace and heat it at 10°C / The rate of min was heated from room temperature to 450°C, kept at 450°C for 0.5h, and then taken out to obtain a light yellow powder sample.

[0035]According to SEM observation, the dispersion is good, there is no obvious agglomeration phenomenon, the particle size is uniform, and the average particle size is about 80nm. The components measured by EDS are In, O and Sn.

Embodiment 3

[0037] 0.1mol of indium nitrate (In(NO 3 ) 3 ·nH 2 O,), 0.01mol of stannous nitrate (Sn(NO 3 ) 2 ), 0.00017mol of salicylic acid (C 7 h 6 o 3 ) mixed to obtain a mixture; add 0.6g of complexing agent citric acid (C 6 h 8 o 7 ) was ultrasonically dispersed and dissolved in ultrapure water to obtain a mixture solution; put it into a 70°C oven and heat it for 12 hours to make a precursor gel, put the precursor gel into a muffle furnace, and heat at 10°C / min Heating rate was from room temperature to 500°C, kept at 500°C for 1 hour, and then took it out to obtain a yellow-green powder sample.

[0038] After SEM observation, the dispersibility is good, there is no obvious agglomeration phenomenon, the particle size is uniform, and the average particle size is about 85nm. The components measured by EDS are In, O and Sn.

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Abstract

The invention discloses nano indium tin oxide powder, which comprises an indium compound and a tin compound, wherein a mass ratio of indium oxide to tin oxide is 9:1; and the nano indium tin oxide powder is in an irregular elliptical spherical shape. The ITO nano powder obtained by a method for preparing the ITO nano powder is uniform in grain diameters and high in dispersibility, and the grain diameters are about 60 nanometers.

Description

technical field [0001] The invention relates to the technical field of manufacturing indium tin oxide (ITO) nano powder, in particular to an indium tin oxide (ITO) nano powder and a manufacturing method thereof. Background technique [0002] Indium tin oxide (ITO) is an indium (group III) oxide (In 2 o 3 ) and tin (Group IV) oxides (SnO 2 ) mixture, usually with a mass ratio of 90% In 2 o 3 with 10% SnO 2 . In film form, it is transparent and colorless, and its main characteristic is the combination of electrical conduction and optical transparency. ITO is currently mainly used in the production of liquid crystal displays, flat panel displays, plasma displays, touch screens, electronic paper, and organic light-emitting diodes, solar cells, antistatic coatings, and transparent conductive films for EMI shielding. [0003] The main preparation method of ITO film is to make ITO nanopowder first, then process it into a target material, and finally form the target material ...

Claims

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Application Information

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IPC IPC(8): C01G19/02B82Y40/00
Inventor 祝渊汤子康陈克新王岩徐明强
Owner SUN YAT SEN UNIV
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