Manufacturing method of semiconductor device
A manufacturing method and semiconductor technology, which can be applied in the manufacture of semiconductor/solid-state devices, photoengraving process of patterned surface, and instruments, etc., can solve the problems such as the decline in the yield of semiconductor device manufacturing, and achieve the effect of improving performance.
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Embodiment 1
[0226] Figure 18 and Figure 19 Shown is a cross-sectional view of the manufacturing process of the semiconductor device in Embodiment 1, and shows a cross-sectional view of a main part in the process of forming the trench-type element isolation structure.
[0227] In the formation process of the trench-type element isolation structure, first, as Figure 18 As shown in (A), on a semiconductor substrate (semiconductor wafer) 41 made of single crystal silicon or the like, a silicon oxide film 42 and a silicon nitride film 43 are sequentially formed from bottom to top. Thereafter, by photolithography, a resist pattern is formed on the silicon nitride film 43 in the following manner. To form the resist pattern a BARC process is used.
[0228] First, if Figure 18 As shown in (B), an antireflection film (BARC) 44 is formed on the silicon nitride film 43 . Among them, ARC29A (manufactured by Nissan Chemical) was used as the chemical solution for forming the anti-reflection fi...
Embodiment 2
[0239] Figure 20 ~ Figure 22 Shown is a cross-sectional view of the manufacturing process of the semiconductor device according to Embodiment 2, showing a cross-sectional view of a main part in the process of forming the trench-type element isolation structure.
[0240] In the formation process of the trench-type element isolation structure, first, as Figure 20 As shown in (A), on a semiconductor substrate (semiconductor wafer) 41, a silicon oxide film 42 and a silicon nitride film 43 are sequentially formed from bottom to top. Thereafter, by photolithography, a resist pattern is formed on the silicon nitride film 43 in the following manner. To form a resist pattern, a three-layer resist process is used to improve anti-reflection and processing characteristics.
[0241] First, if Figure 20 As shown in (B), an underlayer film 51 mainly composed of carbon is formed on the silicon nitride film 43 . At this time, HM8005 (manufactured by JSR) was used as the chemical soluti...
Embodiment 3
[0253] Figure 24 ~ Figure 26 Shown is a cross-sectional view of the manufacturing process of the semiconductor device in Embodiment 3, and shows a cross-sectional view of a main part in the process of forming the trench-type element isolation structure.
[0254] In the formation process of the trench-type element isolation structure, first, as Figure 24 As shown in (A), on a semiconductor substrate (semiconductor wafer) 41, a silicon oxide film 42 and a silicon nitride film 43 are sequentially formed from bottom to top. Thereafter, by photolithography, a resist pattern is formed on the silicon nitride film 43 in the following manner. To form a resist pattern, a three-layer resist process is used to improve anti-reflection and processing characteristics.
[0255] First, if Figure 24 As shown in (B), an underlayer film 51 mainly composed of carbon is formed on the silicon nitride film 43 . At this time, HM8005 (manufactured by JSR) was used as the chemical solution for f...
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Abstract
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