Symmetrical capacitor pressure sensor and manufacture method thereof

A pressure sensor and capacitive technology, which is applied in fluid pressure measurement, instruments, and force measurement using capacitance changes. It can solve problems such as large parasitic capacitance and difficult control of pressure-sensitive film processing thickness, so as to avoid stress and ensure long-term stability. Consistency of performance and performance, and the effect of improving airtightness

Inactive Publication Date: 2013-03-13
EAST CHINA INST OF OPTOELECTRONICS INTEGRATEDDEVICE
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  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the defects in the prior art that the detection capacitance and the reference capacitance are on the same plane, the parasitic capacitance is relatively large, and the processing thickness of the pressure-sensitive film is difficult to control, and a symmetrical capacitive pressure sensor and its preparation method

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  • Symmetrical capacitor pressure sensor and manufacture method thereof
  • Symmetrical capacitor pressure sensor and manufacture method thereof
  • Symmetrical capacitor pressure sensor and manufacture method thereof

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Embodiment Construction

[0027] specific implementation plan

[0028] One, such as figure 2 , image 3 As shown, a symmetrical capacitive pressure sensor provided by the present invention includes: a substrate 6 made of silicon wafers, two sides of the substrate 6 are respectively provided with completely symmetrical detection capacitance chambers 3 and reference capacitance chambers 4, and the back of the substrate 6 is bonded to silicon. The cover plate 5 and the substrate 6 are bonded on the front side to the pressure sensitive membrane 1 made of SOI silicon wafer, and the substrate on one side of the pressure sensitive membrane 1 is provided with an electrode 7 .

[0029] 2. A method for preparing a symmetrical capacitive pressure sensor, which uses the existing MEMS bulk silicon technology to process and manufacture, and the specific process steps are:

[0030] (1) The substrate 6 is made of silicon wafers. After the silicon wafers are cleaned, they are oxidized to form SO 2 Isolation layer 6...

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Abstract

The invention relates to a symmetrical capacitor pressure sensor in the field of microelectronic machinery. The symmetrical capacitor pressure sensor is manufactured by means of a micro electro mechanical system (MEMS) bulk silicon process and characterized by comprising a substrate (6) made of a silicon wafer. A detection capacitance cavity (3) and a reference capacitance cavity (4) which are fully symmetrical are arranged on two faces of the substrate (6) respectively, the back face of the substrate (6) is in bonded connection with a silicon covering plate (5), the front face of the substrate (6) is in bonded connection with a pressure sensitive film (1) made of a silicon-on-insulator (SOI) silicon wafer, and an electrode (7) is arranged on the substrate on one side of the pressure sensitive film (1).

Description

technical field [0001] The invention belongs to the field of micro-electromechanical systems, and specifically relates to a symmetrical capacitive pressure sensor and a preparation method thereof, which are used to solve the problems of large stray capacitance influence and poor performance consistency of traditional capacitive pressure sensors. Background technique [0002] MEMS pressure sensor is a sensor device for measuring pressure. It is a widely used sensor. It has the advantages of small size, light weight, high sensitivity, high precision, good dynamic characteristics, corrosion resistance, and small zero position. According to the different detection signals, there are three common MEMS pressure sensors: piezoresistive, capacitive and piezoelectric MEMS pressure sensors. Compared with piezoresistive pressure sensors, capacitive pressure sensors have been widely used due to their advantages of high sensitivity, low temperature drift, low power consumption and high s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01L1/14G01L9/12B81C1/00B81C3/00
Inventor 汪祖民展明浩吕东锋郭群英徐栋黄斌王鹏何凯旋
Owner EAST CHINA INST OF OPTOELECTRONICS INTEGRATEDDEVICE
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