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Heterojunction bipolar transistor with electrode shielding structure and manufacturing method thereof

A heterojunction bipolar, shielding structure technology, used in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problem of high frequency performance impact, etc., to improve device performance, improve circuit speed, reduce The effect of transmission delay

Active Publication Date: 2013-03-27
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

That is, the output and input capacitance have a great influence on the high-frequency performance of the device, and are the main factor that limits the transmission delay caused by the speed

Method used

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  • Heterojunction bipolar transistor with electrode shielding structure and manufacturing method thereof
  • Heterojunction bipolar transistor with electrode shielding structure and manufacturing method thereof

Examples

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Embodiment 1

[0026] Preferred embodiment one: as figure 1 As shown, to prepare a bipolar transistor with a common emitter connection method, first prepare a heavily doped P-type substrate silicon wafer 1 . After growing the thin oxide layer, N+ impurities are implanted by photolithography, and then the buried layer 2 is formed. After etching the oxide layer, an N-epitaxial layer 3 is grown.

[0027] Photolithography, implanting N+ impurities to form the lead-out part 4 from the buried layer to the collector. An oxide layer is grown, silicon nitride is deposited, and then the oxide layer and silicon nitride are etched by photolithography to form a field oxygen window, and a thick oxide layer is grown as the field oxide layer 5, and then silicon nitride is removed.

[0028] Lithograph the SIC window, inject N-type impurities, and anneal to form the SIC20; then deposit polysilicon, and then photoetch and etch the polysilicon to form a silicon-germanium epitaxial window, and make a silicon-g...

Embodiment 2

[0032] Preferred embodiment two: as figure 2 As shown, to prepare a bipolar transistor with a common collector connection method, first prepare a heavily doped P-type substrate silicon wafer 1 . After growing the thin oxide layer, N+ impurities are implanted by photolithography, and then the buried layer 2 is formed. After etching the oxide layer, an N-epitaxial layer 3 is grown.

[0033] Photolithography, implanting N+ impurities to form the lead-out part 4 from the buried layer to the collector. An oxide layer is grown, silicon nitride is deposited, and then the oxide layer and silicon nitride are etched by photolithography to form a field oxygen window, and a thick oxide layer is grown as the field oxide layer 5, and then silicon nitride is removed.

[0034] Lithograph the SIC window, inject N-type impurities, and anneal to form the SIC20; then deposit polysilicon, and then photoetch and etch the polysilicon to form a silicon-germanium epitaxial window, and make a silico...

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Abstract

The invention discloses a heterojunction bipolar transistor with an electrode shielding structure and a manufacturing method thereof. The heterojunction bipolar transistor with an electrode shielding structure is designed for overcoming the defect that an existing product is large in output and input capacitance. The heterojunction bipolar transistor with the electrode shielding structure comprises a substrate, a buried layer, an extending layer, a collector electrode leading-out region, a field oxide layer, an intrinsic base region, a collector electrode polycrystalline silicon leading-out portion, a collector electrode, an outer base region polycrystalline silicon leading-out portion, an emitting electrode polycrystalline silicon leading-out portion, a base electrode and an emitting electrode. Conductive shielding layers made of conductive materials are arranged between the collector electrode and the base electrode and the emitting electrode and the base electrode. The heterojunction bipolar transistor with the electrode shielding structure and the manufacturing method of the heterojunction bipolar transistor effectively reduce output and input capacitance of a device, shields feedback capacitance between the output end and the input end, improve high-frequency performance, reduce oscillation and transmission delay of a transistor amplifier, improve circuit speed, and are suitable for silicon or germanium-silicon heterojunction bipolar transistors.

Description

technical field [0001] The invention relates to a heterojunction bipolar transistor with an electrode shielding structure and a preparation method thereof. Background technique [0002] The output and input capacitors of silicon or germanium silicon bipolar transistors can form internal feedback, which makes the signal at the output terminal reversely transmitted to the input terminal through the output and input capacitors. If the parallel resonant circuit used as the load is tuned to the signal frequency, the equivalent impedance of the circuit is resistive. At this time, the output and input voltages are just in reverse, and the feedback through the output and input capacitors is negative feedback, which reduces the amplifier gain. However, when the signal frequency is lower than the loop resonance frequency, the circuit load impedance is inductive, then the feedback signal fed back to the input terminal through the output and input capacitors may be in phase with the inp...

Claims

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Application Information

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IPC IPC(8): H01L29/737H01L29/40H01L21/331
Inventor 赵悦付军王玉东崔杰张伟刘志弘李高庆许平
Owner TSINGHUA UNIV
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