Water-soluble near-infrared quantum dot, preparation method and application thereof

A quantum dot and near-infrared technology, applied in chemical instruments and methods, luminescent materials, etc., can solve problems such as poor stability, low quantum yield, and long time consumption, and achieve less surface defects, high quantum yield, and shortened time. Effect

Active Publication Date: 2013-04-03
SHENZHEN INST OF ADVANCED TECH
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Problems solved by technology

[0012] In order to overcome the shortcomings of low quantum yield, long time consumption and poor stability of the water-soluble near-infrared quantum dots prepared by the prior art, the present inventio

Method used

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  • Water-soluble near-infrared quantum dot, preparation method and application thereof
  • Water-soluble near-infrared quantum dot, preparation method and application thereof
  • Water-soluble near-infrared quantum dot, preparation method and application thereof

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preparation example Construction

[0041] The invention provides a method for preparing water-soluble near-infrared quantum dots, which uses CdTeSe as the core, and adjusts the fluorescence emission wavelength of quantum dots by adjusting the ratio of tellurium components. The obtained quantum dots have a fluorescence emission wavelength of 600nm to 850nm.

[0042] Furthermore, CdTeSe is coated with a single precursor, zinc diethylthiocarbamate, to obtain CdTeSe / ZnS quantum dots. ZnS coating can improve the quantum yield of the product and increase its stability; reduce the content of Cd on the surface of the product and reduce its toxicity.

[0043] Finally, the synthesized core-shell quantum dots were modified by hydration using imidazole polymers to obtain water-soluble near-infrared quantum dots. The water-soluble near-infrared quantum dots can be conveniently applied in bioluminescent labeling, fluorescent ion probes, semiconductor devices and other fields.

[0044] Specifically, the method for preparing ...

Embodiment 1

[0095] Growth of CdTeSe quantum dot core: 0.054g Cd(Ac) 2 , 1.2g trioctylphosphine oxide and 0.1g tetradecyl phosphoric acid were added to a 25mL three-neck round bottom flask, and N 2 and heated to 360°C. Te precursor solution (60 uL) and Se precursor solution (240 uL) precursor solutions were quickly injected into the reactor. The temperature was lowered to 320° C. to obtain a solution of CdTeSe quantum dot cores.

[0096] Encapsulation: Cool the solution of CdTeSe quantum dot core to 120°C, slowly add 0.5mL ZnS precursor solution dropwise to the reactor, react for 30 minutes and then rapidly raise the temperature to 180°C for 1h to obtain CdTeSe / ZnS quantum dot solution.

[0097] Separation: After cooling the CdTeSe / ZnS quantum dot solution to room temperature (25°C), add n-hexane and methanol solution with a volume ratio of 1:2, centrifuge to remove the precipitate, suck out the upper layer solution, add acetone, and use a separator at 4000 rpm centrifuge for 5 minutes,...

Embodiment 2

[0101] Growth of CdTeSe quantum dot core: 0.158g Cd(Ac) 2 , 1.2g trioctylphosphine oxide and 0.1g tetradecyl phosphoric acid were added to a 25mL three-neck round bottom flask, and N 2 and heated to 360°C. Te precursor solution (15uL) and Se precursor solution (285uL) precursor solutions were injected rapidly into the reactor. The temperature was lowered to 320° C. to obtain a solution of CdTeSe quantum dot cores.

[0102] Encapsulation: Cool the solution of CdTeSe quantum dot core to 120°C, slowly add 0.5mL ZnS precursor solution dropwise to the reactor, react for 30 minutes and then rapidly raise the temperature to 180°C for 1h to obtain CdTeSe / ZnS quantum dot solution.

[0103] Separation: same as Example 1

[0104] Hydration modification: Take 15mg of CdTeSe / ZnS quantum dot powder and add it to 1mL chloroform to dissolve, weigh 30mg polymer modifier and add it to 1mL dimethyl sulfoxide solution, add the polymer modifier solution to the quantum dot solution and mix well ...

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Abstract

The invention relates to a preparation method of a water-soluble near-infrared CdTeSe/ZnS quantum dot, a quantum dot prepared by adopting the preparation method and application of the quantum dot. According to the method, the emission wavelength of the quantum dot is regulated through regulating the proportion of Te, and the prepared quantum dot has a near-infrared fluorescence emission wavelength being 650-850nm. CdTeSe is cladded by using a single precursor zinc diethyldithiocarbamate, and is modified with imidazole polymers through hydration, so as to obtain the water-soluble quantum dot. The preparation method provided by the invention is convenient to operate and easy to control; and the reappeared water-soluble quantum dot has the advantages of easy labeling and good stability, and can be used in the fields such as biomarkers, fluorescence ion probes and semiconductor devices.

Description

【Technical field】 [0001] The invention relates to the field of semiconductor nanomaterials, in particular to a method for preparing quantum dots, the water-soluble near-infrared CdTeSe / ZnS quantum dots obtained thereby, and applications thereof. 【Background technique】 [0002] Semiconductor nanomaterials (quantum dots) are nanoparticles with a certain crystal structure composed of inorganic semiconductor materials, which have size-dependent electrical and optical properties, and are widely used in biological detection, catalysis, photoelectric energy conversion and other fields. Since it was used for bioluminescent labeling in 1998, quantum dots have been widely used as biological probes in molecular biology, medical diagnostics and other disciplines. [0003] Another application field of quantum dots is the research of biomedical in vivo imaging. Because there are many problems in imaging in the visible light region (400-650nm), such as being affected by endogenous substanc...

Claims

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Application Information

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IPC IPC(8): C09K11/88C09K11/02
Inventor 蔡林涛高笃阳张鹏飞刘淑慧胡德红盛宗海龚萍
Owner SHENZHEN INST OF ADVANCED TECH
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