Chalcopyrite type thin film solar cell and preparation method thereof
A solar cell and chalcopyrite-type technology, which is applied in the manufacture of circuits, electrical components, and final products, can solve the problem that the photoelectric conversion efficiency of chalcopyrite-type thin-film solar cells does not meet the ideal requirements, and facilitates equipment manufacturing and simplification Technology, the effect of reducing battery cost
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[0031] The present invention also provides a method for preparing a chalcopyrite-type thin-film solar cell, the steps comprising: a. cleaning the substrate; b. preparing a main light-absorbing layer on the surface of the substrate; c. preparing mutual insulation on the surface of the main light-absorbing layer The first electrode area and the second electrode area; wherein, preparing the first electrode area includes depositing a back electrode on the surface of the main light absorbing layer; preparing the second electrode area includes sequentially depositing a buffer layer and a conductive layer on the surface of the main light absorbing layer and preparing The second external electrode is simple and easy to implement.
[0032] Preferred steps of the present invention include:
[0033] a. Clean the substrate;
[0034] b. preparing a main light absorbing layer on the surface of the substrate;
[0035] c. Prepare a first electrode region and a second electrode region that a...
Embodiment 1
[0097] (1) Clean ordinary soda-lime glass 1 with a thickness of 2.2 mm for 5 minutes, then dry it with argon, and set it aside;
[0098] (2) Preparation of the main light-absorbing layer 2, take the substrate glass 1 prepared in step (1), and use the reactive co-evaporation process to evaporate Cu, In, and Se to directly prepare p-type CIS (copper: indium: Selenium=0.85:1.0:2.0) layer, the thickness of the prepared CIS layer is 1.5 microns;
[0099] (3) The preparation of the insulating layer 8, first use a mask to cover the positions that do not need to prepare the insulating layer 8, and then use a thermal evaporation process to evaporate silicon oxide to prepare the insulating layer 8. The width of the insulating layer 8 is 50 microns, and the evaporation The height of the insulating layer 8 is 8.0 microns;
[0100] (4) The preparation of the second absorption layer 3 uses a mask to cover the position (including the insulating layer) that does not need to deposit the p+ la...
Embodiment 2
[0106] (1) Clean ordinary soda-lime glass 1 with a thickness of 2.2 mm for 5 minutes, then dry it with argon, and set it aside;
[0107] (2) Preparation of the main light absorbing layer 2, take the substrate glass 1 prepared in the step (1), use a pre-sputtered CuIn target and a CuGa target to prepare a CuInGa metal prefabricated layer on the upper surface of the glass, and then use a solid selenium source selenium Chemical method directly prepares p-type CIGS (copper: indium: gallium: selenium=0.85:0.7:0.3:2.0 layer, the thickness of the prepared CIGS layer is 2.0 microns;
[0108] (3) The preparation of the insulating layer 8, first use a mask to cover the position that does not need to prepare the insulating layer 8, and then use the electron beam evaporation method to evaporate aluminum oxide to prepare the insulating layer 8, the insulating layer 8 is on the surface of the main light absorbing layer 2 The area is 15%, and the height of the evaporated insulating layer 8 i...
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