Method for preparing polyimide micro-graph on surface of GaN-based material

A technology of polyimide micro-pattern and polyimide, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve problems such as difficulties and manufacturing process obstacles to semiconductor light-emitting devices, and achieve high yield, broad market prospects, The effect of simple process

Inactive Publication Date: 2013-04-03
南京大学扬州光电研究院
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the substrates of polyimide spin coating are generally substrates supported by silicon wafers, ceramics, heat-resistant resins, carrier films, aluminum plates, stainless steel plates, and various alloy plates. Due to some special properties such as GaN itself emitting light, only It is very difficult to form standard and effective micropatterns on GaN-based negative-type photosensitive polyimide by purely using ultraviolet lithography technology, which hinders the implementation of some well-designed semiconductor light-emitting device manufacturing schemes in the manufacturing process

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] 1. Spin-coat a 0.5-2.0 μm negative-type photoresist on a GaN base with sapphire as a substrate by using conventional ultraviolet lithography technology, expose for 1-20s under the condition of ultraviolet wavelength of 245-410nm, and after baking After developing for 3-10 minutes, a photoresist geometric pattern mask layer with a side length of 20um and an interval of 300um is prepared.

[0026] 2. Evaporate a Ni metal layer with a thickness of 100 nm on the GaN with photoresist geometric pattern in Step 1 as a light-shielding layer of photolithographic polyimide by using vacuum evaporation equipment.

[0027] 3. Use the 110°C glue remover for 3 minutes to carry out the Lift-off process on the metal light-shielding layer described in step 2, that is, put the above semi-finished product in the 110°C glue remover for 3 minutes so that the quadrilateral photoresist geometry in step 1 (including Ni metal on the surface of this graph) peeled off.

[0028] After the lift-off...

Embodiment 2

[0035] 1. Spin-coat a 0.5-2.0 μm negative-type photoresist on a GaN base with sapphire as a substrate by using conventional ultraviolet lithography technology, expose for 1-20s under the condition of ultraviolet wavelength of 245-410nm, and after baking After developing for 3-10 minutes, a photoresist geometric pattern mask layer with a side length of 200um and an interval of 50um is prepared.

[0036] 2. Evaporate a Ti metal layer with a thickness of 200 nm on the GaN with the photoresist geometric pattern in step 1 as a light-shielding layer of the photolithographic polyimide by using a vacuum evaporation equipment.

[0037] 3. Use the 110°C glue remover for 5 minutes to carry out the Lift-off process on the metal light-shielding layer described in step 2, that is, put the above semi-finished product in the 110°C glue remover for 3 minutes so that the quadrilateral photoresist geometry in step 1 (including Ti metal on the surface of this graph) peeled off. Then immerse in a...

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Abstract

The invention provides a method for preparing a polyimide micro-graph on the surface of a GaN-based material, belonging to the technical field of semiconductors. The method comprises the following steps of: preparing a photoresist geometric graph mask layer on the surface of the GaN-based material; evaporating a shading layer; after carrying out Lift-off treatment, immersing by acetone and absolute ethyl alcohol, washing by de-ionized and baking; coating a negative polyimide thin film on a GaN base; baking, exposing, developing and carrying out photographic fixing to obtain the polyimide micro-graph; then curing the polyimide micro-graph at low temperature to remove a residual metal shading layer on the GaN base; and then, curing the polyimide micro-graph at high temperature. The polyimide micro-graph is used as a surface protection film, an interlayer insulation film and a deep groove filler of a GaN chip and particularly can solve the problem of surface planarization of a multi-chip assembly.

Description

technical field [0001] The invention belongs to the field of semiconductor technology, and in particular refers to a method for preparing polyimide micropatterns by steaming a layer of geometric pattern metal light-shielding layer on the surface of GaN-based materials and then utilizing the negative photosensitive properties of polyimide . Background technique [0002] Gallium nitride (GaN) group III nitride wide bandgap semiconductor material system, due to its wide band gap (covering from the infrared region of 0.6eV to the deep ultraviolet region of 6.1eV) and excellent optical and electrical properties, in the blue Light-emitting diodes (LEDs) and lasers (LDs) in the , green, ultraviolet (UV) and deep ultraviolet bands have broad applications in the field of optoelectronic devices. Due to the special design of some GaN chips, it is often necessary to use an insulating material with good adhesion, not easily swollen by developer, glue remover, etc., and has a certain t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/44
Inventor 徐兆青陈鹏谭崇斌徐洲张琳吴真龙徐峰高峰夏群邵勇王栾井宋雪云
Owner 南京大学扬州光电研究院
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