Micro/nano combined structure, manufacturing method of micro/nano combined structure, and manufacturing method of an optical device
A combined structure and nanostructure technology, applied in nano-optics, optical components, semiconductor/solid-state device manufacturing, etc., can solve the problems of inability to reduce total reflection, inability to eliminate incident angle total reflection, and difficulty in reducing Fresnel reflection, etc., to achieve The effect of minimizing the amount of reflection, maximizing efficiency, and reducing costs
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no. 1 example
[0054] image 3 It is a cross-sectional view for explaining the preparation method of the micro-nano composite structure according to the first embodiment of the present invention.
[0055] refer to image 3 In part (a), the microstructure 105 is formed on the pre-prepared substrate 100 . Here, preferably, the substrate 100 is formed of, for example, a semiconductor substrate (such as a GaAs substrate or an InP substrate, etc.), but it is not limited thereto. The metal thin film 110 can be used arbitrarily.
[0056] Moreover, the microstructure 105 may include, for example, surface textures (texturing), microlenses, and microgrid patterns.
[0057] The above-mentioned surface texture refers to forming random (Random) roughness on the surface by using wet etching method or dry etching method.
[0058] The above-mentioned microlens refers to forming a lens shape with a size of several microns to tens of microns. The usual manufacturing method is to heat-treat the patterned p...
no. 2 example
[0073] Figure 6 It is a cross-sectional view for explaining the preparation method of the micro-nano composite structure according to the second embodiment of the present invention.
[0074] refer to Figure 6 In part (a), the microstructure 105 is formed on the pre-prepared substrate 100 . Here, preferably, the substrate 100 is formed of, for example, a semiconductor substrate (such as a GaAs substrate or an InP substrate, etc.), but it is not limited thereto. The aforementioned buffer layer 107 can be used arbitrarily.
[0075] refer to Figure 6 (b) part, using such as plasma enhanced chemical vapor deposition (PECVD), thermal chemical vapor deposition (Thermal-CVD) and sputtering (sputter) etc. on the upper surface of the substrate 100 formed with the microstructure 105, for example by The buffer layer 107 formed of silicon oxide (SiO2) or silicon nitride (SiNx) is sequentially deposited with a metal thin film 110 using e-beam evaporation (E-beam evaporation) or therm...
no. 3 example
[0094] Figure 7 is a cross-sectional view illustrating a method for fabricating an optical device integrated with a micro-nano composite structure according to the third embodiment of the present invention.
[0095] refer to Figure 7 In part (a), the optical device is a general light-emitting device structure, for example, it can be formed by the following method: after sequentially laminating the n-type doped layer 200, the active layer 210 and the p-type doped layer 220, after the p-type doped layer The p-type upper electrode 230 is laminated on the upper surface of the layer 220 except the light-emitting part, and the n-type lower electrode 240 is laminated on the lower surface of the n-type doped layer 200 to form the above-mentioned optical device, but not limited thereto.
[0096] refer to Figure 7 In part (b), the non-reflective nanostructure 130 formed according to the first embodiment or the second embodiment of the present invention is integrated on the upper su...
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Abstract
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