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Preparation method for copper-indium alloy target for sputtering

A copper-indium alloy and target material technology, applied in sputtering plating, metal material coating process, ion implantation plating, etc., can solve problems such as target material defects and indium ratio problems, and achieve less internal defects and better finished products High efficiency, anti-oxidation effect

Active Publication Date: 2015-04-08
CHINA SHENHUA ENERGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide a copper indium (CuIn) alloy target material and its preparation method for depositing CIS / CIGS thin-film solar cells by sputtering, which solves the problem of the ratio of indium in the CI / CIG precursor film and the problem of indium in the sputtering process due to Arcing problems caused by target defects

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] The elemental metallic copper Cu and the elemental metallic indium In are compounded in proportions of Cu-37% and In-63% by mass percentage to obtain raw materials; put the raw materials into the crucible of the vacuum suspension furnace, and the vacuum The suspension furnace adopts mechanical pump to vacuum to 3.0×10 -2 Pa, filled with high-purity argon gas cleaning furnace, and then vacuumed to 3.0×10 by mechanical pump -2 Pa, then filled with high-purity argon gas, heated to 1000°C after reaching normal pressure to completely melt the raw materials to form an alloy liquid, and keep it for 3 minutes, so as to ensure the uniformity of the alloy liquid composition. Then the temperature is cooled down and the above smelting process is repeated 5 times; then the alloy liquid is poured into a cylinder; the cylinder is polished with a grinder to remove the skin, and then ultrasonically cleaned with acetone for 40 minutes. Put the cylinder into the quartz tube in the vacuum di...

Embodiment 2

[0040] The elemental metal copper Cu and elemental metal indium In are blended in proportions of Cu-40% and In-60% by mass percentage to obtain raw materials; put the raw materials into the crucible of the vacuum suspension furnace, and first put the vacuum The suspension furnace is vacuumed to 5.0×10 by mechanical pump -2 Pa, filled with high-purity argon gas cleaning furnace, and then vacuumed to 5.0×10 by mechanical pump -2 Pa, then filled with high-purity argon gas, heated to 1050°C after reaching normal pressure to completely melt the raw materials to form an alloy liquid, and keep it for 3 minutes, so as to ensure the uniformity of the alloy liquid composition. Then the temperature is cooled down and the above smelting process is repeated 4 times; then the alloy liquid is poured into a cylinder; the cylinder is polished with a grinder to remove the skin, and then ultrasonically cleaned with ether for 50 minutes. Put the cylinder into the quartz tube in the vacuum direction...

Embodiment 3

[0043] The elemental metal copper Cu and elemental metal indium In are compounded in proportions of Cu-45.5% and In-54.5% by mass percentage to obtain raw materials; put the raw materials into the crucible of a non-consumable vacuum arc furnace, and The non-consumable vacuum electric arc furnace adopts mechanical pump to vacuum to 4.0×10 -2 Pa, fill the high-purity argon gas cleaning furnace, and then use molecular pump to vacuum to 4.0×10 -3 Pa, energize the arc to melt the raw materials, move the arc to completely melt the raw materials to form an alloy liquid, then cool down and repeat the above smelting process 3 times, so as to ensure the uniformity of the alloy liquid composition; then the alloy liquid is poured To form a cylinder; the cylinder is polished with a grinder to remove the skin, and then ultrasonically cleaned with ether for 30 minutes. Put the cylinder into the quartz tube in the vacuum directional solidification furnace, and vacuumize to 3×10 by the mechanica...

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PUM

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Abstract

The invention provides a copper-indium alloy target for sputtering, which comprises the following components in percentage by mass: 37.0-45.5% of copper and 54.5-63.0% of indium. The invention also provides a preparation method of the copper-indium alloy target for sputtering, which comprises the following steps: (1) proportioning; (2) smelting; (3) directional solidification; (4) cutting; and (5) heat treatment. The copper-indium alloy target for sputtering solves the problem of proportioning of indium in the copper-indium / copper-indium-gallium precursor film, and the problem of arc discharge due to the defects of the target in the sputtering process.

Description

Technical field [0001] The invention belongs to the technical field of semiconductors, and relates to a metal sputtering target material required by the solar photovoltaic industry and a preparation method thereof, in particular to a copper-indium alloy target material for sputtering and a preparation method thereof. Background technique [0002] Copper Indium Selenide (CuInSe 2 , CIS) or copper indium gallium selenide (CuIn 1-x Ga x Se, CIGS) thin-film solar cells have the advantages of low cost, stable performance, strong radiation resistance, and wide spectral response range. CIS / CIGS thin-film solar cells are multilayer compounds and metal thin-film materials. Among them, the CIS / CIGS absorber layer is the most critical component of the solar cell, and its quality will directly determine the performance of the cell. At present, there are many methods for preparing CIS / CIGS, but there are two main ideas: multi-element step-by-step evaporation and selenization after metal topp...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/06C23C14/34
Inventor 池君洲张云峰张晓煜赵飞燕王连蒙刘延红王丹妮秦兴东王珍
Owner CHINA SHENHUA ENERGY CO LTD