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Chemical treatment method for improving quality of surface layer of copper-indium-gallium-selenium thin film material

A technology of chemical treatment and thin-film materials, applied in the direction of sustainable manufacturing/processing, electrical components, climate sustainability, etc., can solve the problems of insignificant effect and lower solar cell efficiency, and achieve improved surface quality, simple process, and materials low cost effect

Active Publication Date: 2013-06-12
SHANGHAI INST OF SPACE POWER SOURCES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Especially in the surface layer of CIGS thin film materials (0-30nm depth range), if these defects exist in large quantities, it will increase the recombination of carriers near the pn junction and greatly reduce the efficiency of solar cells
So far, in order to improve the surface quality of CIGS thin film materials and passivate the above-mentioned defects, the treatment methods reported so far are to use the chemical water bath preparation process of buffer layer materials for partial treatment, and the effect is not significant

Method used

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  • Chemical treatment method for improving quality of surface layer of copper-indium-gallium-selenium thin film material
  • Chemical treatment method for improving quality of surface layer of copper-indium-gallium-selenium thin film material
  • Chemical treatment method for improving quality of surface layer of copper-indium-gallium-selenium thin film material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] Alcohol treatment solution 15 is prepared by deionized water and absolute ethanol in a certain ratio (about 12:1), stirred in a glass container to fully dissolve, and the glass substrate is coated with Mo (molybdenum) film and Sample 14 of the CIGS film was placed in an alcohol treatment solution such as figure 1 As shown, take it out after soaking for 5 min, and heat-treat the sample at 30°C-50°C for 30s-60s to obtain the heat-treated sample 18, as shown in figure 2 As shown, the chemical treatment solution 17 of deionized water, ammonia water and zinc sulfate is prepared in a glass container according to a certain concentration ratio, the concentration of ammonia water in the prepared chemical treatment solution is 3mol / L, and the concentration of zinc sulfate is adjusted at 0~1×10 -2 mol / L, and the concentration of zinc sulfate is not 0. The heat-treated sample 18 is soaked in the chemical treatment solution 17, and the chemical treatment solution 17 is heat...

Embodiment 2

[0024] Alcohol treatment solution 15 is prepared by deionized water and absolute ethanol in a certain ratio (about 12:1), stir to make it fully dissolved, put the sample 14 coated with Mo film and CIGS film on the glass substrate into alcohol Soak in the treatment solution 15 for 5 minutes, take it out and heat-treat it at 40°C for 40 seconds; prepare a chemical treatment solution 17 of deionized water, ammonia water and zinc acetate in a glass container according to a certain concentration ratio, and the concentration of ammonia water in the prepared chemical treatment solution is 3mol / L, adjust the concentration of zinc acetate at 0~1×10 -2 mol / L, and the concentration of zinc acetate is not 0. Soak the heat-treated sample 18 in the chemical treatment solution 17, take out the sample after soaking for 8 minutes, and dry the residual solution on the surface of the sample with dry nitrogen to complete the chemical treatment of the surface quality of the CIGS film mat...

Embodiment 3

[0027] Alcohol treatment solution 15 is prepared by deionized water and absolute ethanol in a certain ratio (about 10:1), stir to make it fully dissolved, put the sample 14 coated with Mo film and CIGS film on the glass substrate into alcohol Soak in the treatment solution for 6 minutes, take it out and heat-treat at 40°C for 40 seconds; prepare a chemical treatment solution 17 of deionized water, ammonia water and zinc sulfate in a glass container according to a certain concentration ratio, and the concentration of ammonia water in the prepared chemical treatment solution is 3mol / L, adjust the concentration of zinc sulfate at 0~1×10 -2 mol / L, and the concentration of zinc sulfate is not 0. The heat-treated sample 18 was soaked in the chemical treatment solution, and the chemical treatment solution was heated to 80° C. (the optimum reaction temperature). After soaking for 8 minutes, the sample was taken out, and the residual solution on the surface of the sample was blown dr...

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Abstract

The invention discloses a chemical treatment method for improving the quality of the surface layer of a copper-indium-gallium-selenium thin film material. The chemical treatment method includes: step 1, a sample, on a glass substrate of which a Mo layer and a CIGS (copper-indium-gallium-selenium) thin film are coated, is put into alcoholic solution and soaked for 5 to 10 minutes, and after being taken out, the sample is treated by heat at 30 DEG C to 50 DEG C for 30 to 60 seconds; step 2, chemical treatment solution containing deionized water, ammonia water and zinc salt is prepared, wherein the concentration of the ammonia water is 3mol / L, and the concentration of the zinc salt is 0 to 1*10 <-2>mol / L, the sample which is treated by heat in step 1 is put into the chemical treatment solution, soaked for 7 to 10 minutes and then taken out, dry nitrogen is used for drying the residual solution on the surface of the sample, and thereby the chemical treatment of the quality of the surface layer of the CIGS thin film material is finished. By means of the chemical solution soaking method, the chemical treatment method can reduce the impurities of the surface layer, and zinc ions can be diffused into the surface layer and occupy Cu vacancies, so that surface defect mode can be repaired, a shallow buried junction can be formed, and the quality of the surface layer of the CIGS thin film material is improved. The process is simple, the material cost is low, and the chemical treatment method is suitable for the mass production of copper-indium-gallium-selenium thin film solar cells.

Description

technical field [0001] The invention belongs to the technical field of new energy sources of photovoltaic cells, and relates to a surface treatment method of a thin film material, in particular to a chemical treatment method for improving the surface quality of a copper indium gallium selenium thin film material. Background technique [0002] Thin-film solar cells with copper indium gallium selenide (CIGS) material as the absorbing layer have the characteristics of high photoelectric conversion efficiency and good radiation resistance, and have become one of the research hotspots in the field of photovoltaic cells. The copper indium gallium selenide thin film material is a p-type semiconductor, while the buffer layer material (such as zinc sulfide) is an n-type semiconductor, and the two form the pn junction of the core part of the battery. [0003] Copper indium gallium selenide material is a polycrystalline compound material. Due to the differences in thermal diffusivity o...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 张德涛徐传明曹章轶吴敏张冬冬
Owner SHANGHAI INST OF SPACE POWER SOURCES