A kind of preparation method of zinc oxide nanowire pattern

A technology of zinc oxide nanowires and patterns, applied in the field of material chemistry, can solve the problems of failing to give full play to the photoelectric performance of zinc oxide nanomaterials, not being able to prepare zinc oxide nanowire arrays, and having no preparation process, so as to avoid large-scale and high-priced The use of equipment, high one-dimensional vertical orientation, and low cost effects

Inactive Publication Date: 2015-10-28
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method cannot be used to prepare one-dimensional vertically oriented ZnO nanowire arrays, and the excellent optoelectronic properties of ZnO nanomaterials cannot be fully exploited.
It can be seen that most of the existing methods for preparing zinc oxide nanowire patterns rely on photolithography or electron beam etching technology, which requires large-scale equipment and complicated operations, and there is no simple and efficient preparation process.

Method used

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  • A kind of preparation method of zinc oxide nanowire pattern
  • A kind of preparation method of zinc oxide nanowire pattern

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Embodiment 1

[0021] will PS- b -PDMAEMA was dissolved in carbon disulfide to obtain a homogeneous PS of 1 mg / mL- b -PDMAEMA solution, PS- b -The molar percentage of styrene units in PDMAEMA is 90%, and 0.1 mL of PS- b - Spread the PDMAEMA solution evenly on the ice surface, quickly place it in an environment with a relative humidity of 80%, and take it out after the solvent evaporates to obtain a through-type PS- b - PDMAEMA honeycomb-shaped ordered porous membrane with a pore size of 3.9 μm; the silicon wafers were placed in acetone solution and deionized water for 30 minutes, and then dried with nitrogen gas, and the above silicon wafers were sputtered by radio frequency magnetron sputtering technology. A zinc oxide seed layer is formed on the surface, the specific conditions are: growth temperature 350°C, sputtering pressure 1.0 Pa, gas atmosphere 80 sccm Ar : 5 sccm O 2 , sputtering time 1 hour, sputtering power 100 W. Covering the through-type PS- b -PDMAEMA honeycomb ordered por...

Embodiment 2

[0023] will PS- b -PHEMA was dissolved in carbon disulfide to make 1 mg / mL homogeneous PS- b -PHEMA solution, PS- b -The molar percentage of styrene units in PHEMA is 99%, and 0.1 mL of PS- b -The PHEMA solution was evenly spread on the ice surface, quickly put it in an environment with a relative humidity of 75%, and took it out after the solvent evaporated to obtain a through-type PS- b -PHEMA honeycomb-shaped ordered porous membrane with a pore size of 2 μm; the glass was placed in acetone solution and deionized water for 30 minutes, ultrasonically cleaned for 30 minutes, dried with nitrogen, and then radio frequency magnetron sputtering technology was used to generate Zinc oxide seed layer, the specific conditions are: growth temperature 350°C, sputtering pressure 1.0 Pa, gas atmosphere 80 sccm Ar : 5 sccm O 2 , sputtering time 1 hour, sputtering power 100 W. On the above glass surface covered through-type PS- b -PHEMA honeycomb ordered porous membrane as a template, ...

Embodiment 3

[0025] will PS- b -PAA was dissolved in dichloromethane to prepare 5 mg / mL homogeneous PS- b -PAA solution, PS- b -The molar percentage of styrene units in PAA is 95%, and 0.1 mL of PS- b -PAA solution was evenly spread on the ice surface, quickly placed in an environment with a relative humidity of 90%, and taken out after the solvent evaporated to obtain a through-type PS- b -PAA honeycomb-shaped ordered porous membrane with a pore size of 3 μm; the gold flakes were placed in acetone solution and deionized water for 30 minutes and ultrasonically cleaned for 30 minutes. A zinc oxide seed layer is formed on the surface, the specific conditions are: growth temperature 350°C, sputtering pressure 1.0 Pa, gas atmosphere 80 sccm Ar : 5 sccm O 2 , sputtering time 1 hour, sputtering power 100 W. Cover the through-type PS- b -PAA honeycomb ordered porous membrane was used as a template, and heat-treated at 75°C for 1 hour; the prepared gold flakes were immersed in an aqueous solu...

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Abstract

The invention discloses a preparation method of a zinc oxide nano-wire pattern. The method comprises the steps that: (1) a through-type polymer ordered porous membrane is prepared; (2) the through-type polymer ordered porous membrane is covered on the surface of a substrate with an zinc oxide seed layer pre-produced with a radio-frequency magnetron sputtering technology; (3) the substrate is placed into a water solution of a zinc oxide precursor and Lewis base, and is allowed to grow for a certain period of time; (4) the substrate is soaked in a mold release agent; the through-type polymer ordered porous membrane is removed; and after washing, the zinc oxide nano-wire pattern is formed on the surface of the substrate. The method provided by the invention is not dependant on existing patterning technologies such as photolithography and electron beam lithography. One-dimensional vertical orientation of the zinc oxide nano-wire pattern is high. With the method, array dimension dynamical controllable adjustment can be realized. The cost is low, and the method is simple and convenient.

Description

technical field [0001] The invention relates to the field of material chemistry, in particular to a method for preparing a zinc oxide nanowire pattern. Background technique [0002] Zinc oxide is a semiconductor material with a wide energy band gap (3.37 eV) and high exciton binding energy (60 meV) at room temperature. Transistors, high-performance nano-sensors and solar cells have a wide range of applications. Precisely controlling the growth behavior of ZnO nanomaterials and preparing ZnO nanostructure patterns is of great significance to meet the complex and diverse requirements of current nanotechnology. The currently widely used methods for preparing ZnO nanostructure arrays are mainly photolithography and electron beam etching, which rely on large-scale equipment and are expensive. Colloidal crystal arrays have the advantages of simplicity, convenience, low cost, and large-area preparation. Chinese invention patent application CN102219557A discloses a method for pre...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00B82Y40/00
Inventor 万灵书欧洋朱凉伟徐志康
Owner ZHEJIANG UNIV
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