High-heat-conductivity tungsten-copper heat sink and electronic packaging material, and preparation method thereof

An electronic packaging material, high thermal conductivity technology, applied in the direction of metal material coating process, circuit, electrical components, etc., can solve the problems of complicated preparation process of tungsten copper alloy, prolonged production cycle, increased cost, etc., to increase the bonding area And the effect of bonding force, production cost reduction, and high production efficiency

Active Publication Date: 2013-07-10
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This complicates the preparation process of tungsten copper alloy, prolongs the production cycle and increases the cost

Method used

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  • High-heat-conductivity tungsten-copper heat sink and electronic packaging material, and preparation method thereof
  • High-heat-conductivity tungsten-copper heat sink and electronic packaging material, and preparation method thereof
  • High-heat-conductivity tungsten-copper heat sink and electronic packaging material, and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Tungsten powder with a particle size of 10-80 μm and copper powder with a particle size of 20-100 μm are used, and the weight percentage of copper powder and tungsten powder is 30%: 70%, which is mechanically mixed in a ball mill for 12 hours and mixed evenly, and used as a mixed powder for spraying. After the T4 copper substrate is subjected to sandblasting treatment at a sandblasting pressure of 5Mpa, it is then placed in an ethanol solution for ultrasonic cleaning once for 10 minutes. Then take it out and dry it for 60 minutes at a temperature of 50° C., and use the sandblasted T4 copper as the substrate for spraying for later use.

[0037] Plasma spraying was carried out using a vacuum plasma spraying system from Sulzer Metco, Switzerland. Firstly, after reducing the vacuum degree of the vacuum chamber to below 10Pa, fill the protective gas with Ar gas to the set pressure. Under the plasma spraying process parameters shown in Table 2, the prepared composite powder ...

Embodiment 2

[0042] Tungsten powder with a particle size of 10-80 μm and copper powder with a particle size of 20-100 μm are used, and the weight percentage of copper powder and tungsten powder is 15%: 85% is mechanically mixed in a ball mill for 2 hours to mix evenly, and it is used as a mixed powder for spraying. After the T4 copper substrate is subjected to sandblasting treatment at a sandblasting pressure of 3Mpa, it is then put into an ethanol solution for ultrasonic cleaning twice, each cleaning time is 5 minutes. Then take it out and dry it at 100° C. for 20 minutes, and the sandblasted T4 copper substrate is used as the sprayed substrate for later use. Using the same vacuum plasma spraying process parameters as in Example 1, a tungsten-copper composite coating was prepared by spraying on the surface of the copper substrate, the coating thickness was about 200 μm, and the porosity was less than 1%. The room temperature thermal conductivity of the prepared composite material can reac...

Embodiment 3

[0044] Tungsten powder with a particle size of 10-80 μm and copper powder with a particle size of 20-100 μm are used, and the weight percentage of copper powder and tungsten powder is 10%: 90% is mechanically mixed in a ball mill for 8 hours to mix evenly, and it is used as a mixed powder for spraying. After the T1 copper substrate is subjected to sandblasting treatment at a sandblasting pressure of 3Mpa, it is then placed in an ethanol solution for ultrasonic cleaning once for 10 minutes. Then take it out and dry it for 40 minutes at a temperature of 80° C., and use the sandblasted copper alloy as a spraying substrate for later use.

[0045] Plasma spraying was carried out using a vacuum plasma spraying system from Sulzer Metco, Switzerland. Firstly, after reducing the vacuum degree of the vacuum chamber to below 10Pa, fill the protective gas with Ar gas to the set pressure. Under the plasma spraying process parameters shown in Table 3, the prepared composite powder was spra...

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Abstract

The invention relates to a high-heat-conductivity tungsten-copper heat sink and electronic packaging material. The tungsten-copper heat sink and electronic packaging material is composed of copper or a copper alloy matrix, and a tungsten-copper composite coat formed on copper or the copper alloy matrix through a vacuum plasma spraying technology, wherein the room-temperature heat conduction coefficient of the tungsten-copper heat sink and electronic packaging material is greater than 300W/(m.K), the porosity of the tungsten-copper composite coat is lower than 3%, the thickness of the tungsten-copper composite coat is 100-2000mum, and the weight percent content of copper in the tungsten-copper composite coat is 10-40%.

Description

technical field [0001] The invention belongs to the field of tungsten-copper composite materials, and relates to a tungsten-copper heat sink and an electronic packaging material, especially a tungsten-copper heat sink and an electronic packaging material with high thermal conductivity and a preparation method thereof. Background technique [0002] Tungsten-copper composite material is a kind of composite material composed of tungsten and copper with two phases evenly distributed, neither solid solution nor compound. It has the characteristics of high electrical conductivity and thermal conductivity of copper and high melting point and low thermal expansion coefficient of tungsten. , is an ideal heat sink and packaging material. [0003] With the development of switching devices towards high voltage and high capacity, and the continuous development of electronic devices towards miniaturization, high power, high reliability and low cost, the integration of semiconductor power ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C4/08C23C4/12H01L23/373H01L23/29C23C4/134
Inventor 牛亚然郑学斌谢有桃黄利平季珩
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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