Nanoscale photolithography
A patterning and epoxy polymer technology, applied in nanotechnology, nanotechnology, optics, etc., can solve problems such as difficulty in achieving fully conformal contact with guide plates, slowness, and physical constraints encountered by photolithography
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example 1
[0060] The SSQ resin T containing about 4 mole % silanol 苯基 0.40 T 甲基丙烯酰氧基 0.60 Spin-coated on 4-inch silicon wafers and irradiated by UV at room temperature (UV broadband dose + 0.3J / cm 2 ) to cure. The coated surface was treated by vapor deposition method using N-methyl-aza-2,2,4,-trimethylsilacyclopentane. A glycidoxypropyl-terminated polydimethylsiloxane (PDMS) polymer (Mn: 8000, M w / M n =2.05). By first treating the front layer with 1,3-bis(N-methylaminoisobutyl)tetramethyldisiloxane, followed by glycidoxypropyl-terminated polydimethylsiloxane (PDMS ) polymer (Mn: 8000, M w / M n =2.05) to apply an additional layer of epoxy silicone polymer. After each epoxy silicone layer was anchored to the surface, the thickness of the SSQ resin top coat was measured by ellipsometry.
[0061] image 3 The thickness of the coating is shown to increase linearly with the number of polymer coatings of this size, and each layer is roughly about 10 nm thick.
example 2
[0063] A 4-inch silicon wafer was treated in a similar manner to Example 1, except that epoxy polymers with different molecular weights were coated once. Figure 4 It is shown that the thickness of the coating increases substantially linearly with increasing molecular weight of the epoxy polymer.
example 3
[0065] High-resolution nanostructure fabrication was demonstrated using this technique by reducing the gap between dense wires to less than 30 nm. Figure 5 is a scanning electron micrograph (SEM) showing the patterned surface. The groove size of the SSQ grating pattern is reduced by the deposition of multiple molecular layers, and the gap size increases with the number of layers coated (Mn = 8000 g / mol, M w / M n =2.05) decreases almost linearly. initial pattern ( Figure 5a) has a trench with a width of 55 nm, and after coating three layers, the width of the trench is reduced to about 25 nm ( Figure 5 b), Each layer reduces the gap by 10nm.
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