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Nanoscale photolithography

A patterning and epoxy polymer technology, applied in nanotechnology, nanotechnology, optics, etc., can solve problems such as difficulty in achieving fully conformal contact with guide plates, slowness, and physical constraints encountered by photolithography

Inactive Publication Date: 2013-07-24
DOW CORNING CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, photolithography encounters physical constraints due to wavelength diffraction problems that hinder the fabrication of ultra-small structures
Also, equipment and facilities are becoming prohibitively expensive
Developing techniques such as NIL and SFIL molding techniques appear to offer low-cost, high-throughput methods for patterning large areas; however, molding requires initial master molds, which are typically made by lithographic methods and can limited by some traditions
Another method based on electron beam lithography called "molecular rulers" enables the creation of metallic structures as small as 30nm; however, this technique is time-consuming and laborious as it relies on layer-by-layer deposition
A similar approach involves forming polymer brushes on different types of patterned polymers by atom transfer radical polymerization (ATRP) to control the size of imprinted structures, but this method is slower (4 to 16 Å depending on the monomer used). Hours)
Another approach is the sealing and oxidation shrinking method, which can create sub-10nm channels; however, this method requires expensive laser equipment and high oxidation temperature
Yet another technique, called Self-improvement by Liquefaction (SPEL), has been used to create small nanostructures; however, it requires fully conformal contact between the guide plate and its target, which is difficult to achieve, and the size of the resulting structure is achieved by aggregation Material backflow control, it is difficult to control accurately
Finally, shadow evaporation was also used to reduce the grating gap size down to 10nm, but this has not been shown to produce sharp profiles
[0006] Therefore, there remains an unmet need for effective feature size reduction that is difficult to achieve with conventional photolithographic methods

Method used

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  • Nanoscale photolithography
  • Nanoscale photolithography
  • Nanoscale photolithography

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0060] The SSQ resin T containing about 4 mole % silanol 苯基 0.40 T 甲基丙烯酰氧基 0.60 Spin-coated on 4-inch silicon wafers and irradiated by UV at room temperature (UV broadband dose + 0.3J / cm 2 ) to cure. The coated surface was treated by vapor deposition method using N-methyl-aza-2,2,4,-trimethylsilacyclopentane. A glycidoxypropyl-terminated polydimethylsiloxane (PDMS) polymer (Mn: 8000, M w / M n =2.05). By first treating the front layer with 1,3-bis(N-methylaminoisobutyl)tetramethyldisiloxane, followed by glycidoxypropyl-terminated polydimethylsiloxane (PDMS ) polymer (Mn: 8000, M w / M n =2.05) to apply an additional layer of epoxy silicone polymer. After each epoxy silicone layer was anchored to the surface, the thickness of the SSQ resin top coat was measured by ellipsometry.

[0061] image 3 The thickness of the coating is shown to increase linearly with the number of polymer coatings of this size, and each layer is roughly about 10 nm thick.

example 2

[0063] A 4-inch silicon wafer was treated in a similar manner to Example 1, except that epoxy polymers with different molecular weights were coated once. Figure 4 It is shown that the thickness of the coating increases substantially linearly with increasing molecular weight of the epoxy polymer.

example 3

[0065] High-resolution nanostructure fabrication was demonstrated using this technique by reducing the gap between dense wires to less than 30 nm. Figure 5 is a scanning electron micrograph (SEM) showing the patterned surface. The groove size of the SSQ grating pattern is reduced by the deposition of multiple molecular layers, and the gap size increases with the number of layers coated (Mn = 8000 g / mol, M w / M n =2.05) decreases almost linearly. initial pattern ( Figure 5a) has a trench with a width of 55 nm, and after coating three layers, the width of the trench is reduced to about 25 nm ( Figure 5 b), Each layer reduces the gap by 10nm.

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Abstract

A simple and practical method that can reduce the feature size of a patterned structure bearing surface hydroxyl groups is described. The patterned structure can be obtained by any patterning technologies, such as photo-lithography, e-beam lithography, nano-imprinting lithography. The method includes: (1) initially converting the hydroxyl or silanol-rich surface into an amine-rich surface with the treatment of an amine agent, preferably a cyclic compound; (2) coating an epoxy material on the top of the patterned structure; (3) forming an extra layer when applied heat via a surface-initiated polymerization; (4) applying an amine coupling agent to regenerate the amine-rich surface; (5) coating an epoxy material on the top of the patterned structure to form the next layer; (6) repeating step 4 and 5 to form multiple layers; ; This method allows the fabrication of feature sizes of various patterns and contact holes that are difficult to reach by conventional lithographic methods.

Description

[0001] Cross references to related patent applications [0002] none [0003] Statement Regarding Federally Sponsored Research [0004] none Background technique [0005] As the dimensions of fabricated structures reach the nanoscale domain, photolithography begins to face several technical, economical and physical challenges. For example, photolithography suffers from physical constraints due to wavelength diffraction problems that prevent fabrication of ultra-small structures. Additionally, equipment and facilities are becoming prohibitively expensive. Developing techniques such as NIL and SFIL molding techniques appear to offer low-cost, high-throughput methods for patterning large areas; however, molding requires initial master molds, which are typically made by lithographic methods and can Subject to some traditional restrictions. Another method based on electron beam lithography called "molecular rulers" enables the creation of metallic structures as small as 30nm; ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/00G03F7/16G03F7/40
CPCB82Y10/00G03F7/0002G03F7/405B05D1/36B82Y40/00G03F7/165Y10T428/24479Y10T428/24612H01L21/0274
Inventor P-F·傅L·J·郭E·S·莫耶卡洛斯·碧娜-赫尔南德
Owner DOW CORNING CORP