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Unipolar memristor and preparation method thereof

A memristor and unipolar technology, applied in the field of unipolar memristor and its preparation, can solve the problems of ignoring the essential physical properties of the memristor, unable to carry out hardware experiments, and not yet realized commercial production, etc. Achieving, low-cost, low-cost effects

Inactive Publication Date: 2013-08-07
SHANDONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The VO2 memristor based on the phase transition mechanism reported in the literature [T.Driscoll, H.T.Kim, B.G.Chae, et al., Phase-transition driven memristive system.Appl.Phys.Lett,2009,95(4):043505], Although it is a unipolar memristor, because the memristor effect of the memristor is based on the metal-insulator phase transition, and the phase transition process requires a certain temperature condition, the memristor has a fatal flaw: only in a certain temperature range memristive effect
[0007] (3) Commercial production has not yet been realized
It is difficult for most researchers to obtain a real memristor element, so many researchers cannot carry out hardware experiments in the real physical sense due to the lack of memristor elements when studying memristors and memristor circuits. Rely on simulation or simulated circuits for experimental research
However, the memristor simulation model and the analog circuit are far from the actual memristor characteristics, and the hardware implementation using the analog circuit is more concerned with simulating the memristor mathematical model and ignoring the essential physical characteristics of the memristor

Method used

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  • Unipolar memristor and preparation method thereof
  • Unipolar memristor and preparation method thereof

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Embodiment 1

[0033] Such as figure 1 As shown, the unipolar nanometer thin film memristor of the present invention includes two electrodes 1 and a nanometer thin film structure 2 placed therein, figure 2 For the mathematical model of the unipolar nano-film memristor M(q) of the present invention, the preparation method of the nano-film structure 2 is as follows:

[0034] (1) Barium acetate Ba(CH 3 COO) 2 and strontium acetate Sr(CH 3 COO) 2 Mixed at a molar ratio of 9:1, dissolved in acetic acid CH 3 COOH, add appropriate amount of acetylacetone CH 3 COCH 2 COCH 3 As a stabilizer, stir for 15 minutes to obtain a mixture;

[0035] (2) Add butyl titanate Ti(OC 4 h 9 ) 4 , stirred for 30min, filtered;

[0036] (3) Add appropriate amount of glacial acetic acid CH to the filtered solution 3 Dilute COOH to 0.3mol / L, and use it as a precursor after filtration;

[0037] (4) Immerse the substrate in the precursor sol, pull it vertically at a speed of 1cm / s after 30s, and lay it flat ...

Embodiment 2

[0040] In the raw material formula, barium acetate: strontium acetate: butyl titanate = 8:2:10 (molar ratio), and the others are the same as in Example 1.

Embodiment 3

[0042] In the raw material formula, barium acetate: strontium acetate: butyl titanate = 7:3:10 (molar ratio), the stirring time in step (1) is 30min; the amount of acetylacetone added is 5% of the mass of acetic acid; step ( The stirring time in 2) is 40min; the concentration of glacial acetic acid in step (3) is 0.5mol / L; in step (4), the substrate is immersed in the precursor sol, and after 60s, the La, the sol film was dried at 100°C for 10 minutes, the number of repetitions in step (5) was 3, the gel film was heat-treated at 700°C for 10 minutes, and the others were the same as in Example 1.

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Abstract

The invention discloses a unipolar nano-film memristor which comprises two electrodes and a Ba (1-x) SrxTiO3-delta nano-film arranged in the two electrodes, wherein x is large than 0 and smaller than 1, and delta is larger than 0 and smaller than 3. The principal crystalline phase of the film is measured to be Ba (1-x) SrxTiO3 through X ray diffraction, and actually is Ba (1-x) SrxTiO3-delta which is rich in oxygen deficiency namely oxygen vacancy; the film adopts a single-layer film structure; and the thickness of the film is 20 to 800 nanometers. The invention also discloses a preparation method of the unipolar nano-film memristor. The unipolar nano-film memristor is particularly applicable to general circuit theoretical research and circuit design, has generality and universality, is low in cost and is easily realized physically.

Description

technical field [0001] The invention relates to the application field of nonlinear circuits, in particular to a unipolar memristor and a preparation method thereof. Background technique [0002] As early as 1971, the pioneer of international nonlinear circuit and cellular neural network theory, Leon Chua (Cai Shaotang) of the University of California, Berkeley, based on the logical integrity of circuit theory, theoretically predicted the circuit in addition to resistance, capacitance, and inductance. The presence of a fourth fundamental element—the memristor. In May 2008, researchers at Hewlett-Packard Labs successfully realized the world's first working memristor prototype, thus confirming Chua's theory about memristors, which aroused strong attention worldwide. Due to the memristor's non-volatile, synaptic function and nanoscale structure, it is widely used in high-density non-volatile memory, artificial neural network, large-scale integrated circuit, reconfigurable logic...

Claims

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Application Information

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IPC IPC(8): C04B35/468H01L45/00B82Y40/00C04B35/624C04B35/47
Inventor 李玉霞郭梅
Owner SHANDONG UNIV OF SCI & TECH
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