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Chemical vapor deposition method of Si-B-C-N amorphous ceramic

A chemical vapor deposition, si-b-c-n technology, applied in the field of chemical vapor deposition, can solve the problems of no ceramic matrix composite material interface and substrate reports, etc., and achieve the effect of easy preparation of large size, good uniformity and strong designability

Active Publication Date: 2013-08-21
NORTHWESTERN POLYTECHNICAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For the precursor gas source system for the deposition of Si-B-C-N ceramics, there is no report on the preparation of Si-B-C-N amorphous ceramics by multi-gas source co-deposition
Moreover, the Si-B-C-N ceramics deposited by existing research are all used for coatings and thin films, and there are no reports of penetration into porous prefabricated bodies, nor are there reports for the interface and matrix of ceramic matrix composites.

Method used

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  • Chemical vapor deposition method of Si-B-C-N amorphous ceramic
  • Chemical vapor deposition method of Si-B-C-N amorphous ceramic
  • Chemical vapor deposition method of Si-B-C-N amorphous ceramic

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] (1) Use 2-dimensional plain carbon cloth with brand T300 as the base, and cut it to a size of 50mm×50mm;

[0028] (2) Hang the above base material on the supporting sample holder of the vacuum furnace, and the sample is in the center of the isothermal zone in the furnace;

[0029] (3) Prepare Si-B-C-N ceramics with uniform thickness on the substrate by CVD / CVI method, the precursor is SiCH 3 Cl 3 -BCl 3 -NH 3 -H 2 -Ar,H 2 Carrier gas and NH 3 The flow ratio is 2:3, BCl 3 : NH 3 : dilute H 2 : Ar=1:3:5:5. Reaction temperature is 900 DEG C, and soaking time is 7 hours, and pressure in furnace is 1000Pa.

Embodiment 2

[0031] (1) Select porous Si 3 N 4 The ceramic substrate is pre-processed according to the size of 22.86mm × 10.16mm × 2.2mm, and the surface of the formed substrate is ground and polished as the base material;

[0032] (2) Hang the above base material on the supporting sample holder of the vacuum furnace, and the sample is in the center of the isothermal zone in the furnace;

[0033] (3) Prepare Si-B-C-N ceramics with uniform thickness on the substrate by CVD / CVI method, the precursor is SiCl 4 -BCl 3 -C 3 h 6 -NH 3 -H 2 -Ar,H 2 Carrier gas and NH 3 The flow ratio is 1:1, BCl 3 :C 3 h 6 : NH 3 : dilute H 2 : Ar=1:1:4:5:10, the reaction temperature is 700°C, the holding time is 7 hours, and the pressure in the furnace is 400Pa;

[0034] Si 3 N 4 -SiBCN composite phase ceramics are tested for dielectric properties, and the test frequency is 8.2-12.4GHz.

Embodiment 3

[0036] (1) Select porous Si 3 N 4 The ceramic substrate is pre-processed according to the size of 22.86mm × 10.16mm × 2.2mm, and the surface of the formed substrate is ground and polished as the base material;

[0037] (2) Hang the above base material on the supporting sample holder of the vacuum furnace, and the sample is in the center of the isothermal zone in the furnace;

[0038] (3) Prepare Si-B-C-N ceramics with uniform thickness on the substrate by CVD / CVI method, the precursor is SiCl 4 -BCl 3 -CH 4 -NH 3 -H 2 -Ar,H 2 Carrier gas and NH 3 The flow ratio is 1:1, BCl 3 :CH 4 : NH 3 : dilute H 2 : Ar=1:3:4:6:6, the reaction temperature is 1200°C, the holding time is 7 hours, and the pressure in the furnace is 500Pa;

[0039] Si 3 N 4 -SiBCN composite phase ceramics are tested for dielectric properties, and the test frequency is 8.2-12.4GHz.

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Abstract

The invention relates to a chemical vapor deposition method of a Si-B-C-N amorphous ceramic. The chemical vapor deposition method comprises the following steps of: suspending a substrate material on a matching sample bracket of a vacuum furnace, putting samples in a centre of an isothermal region in the furnace and preparing even Si-B-C-N amorphous ceramic on the surface / interior of the substrate material by using a CVD (Chemical Vapor Deposition) / CVI (Chemical Vapor Infiltration) method. The Si-B-C-N amorphous ceramic prepared by the chemical vapor deposition method can be applied to an interface, a matrix and a coating of a continuous fiber-reinforced ceramic matrix composite, has the advantages of excellent properties such as good high-temperature stability, good anti-oxidation property, strong creep resisting capability, low density, low coefficient of thermal expansion and low heat conductivity coefficient and the like, can replace materials such as SiC and Si3N4, further improves the using temperatures and prolongs the service lives of thermal structure ceramics and ceramic matrix composites and has a great application potentiality in the isothermal and long-life field of aircraft engines and industrial gas turbines; and meanwhile, the Si-B-C-N amorphous ceramic also has electrical properties similar to the semiconductors and interesting optical properties and is widely used in the fields of high-temperature invisibility, semiconductors, photoelectricity, communication and control.

Description

technical field [0001] The invention relates to a chemical vapor deposition method of Si-B-C-N amorphous ceramics, in particular to a low-pressure thermal chemical vapor deposition method. It is mainly used in the interface, matrix and coating of continuous fiber toughened ceramic matrix composites. Background technique [0002] Si-B-C-N quaternary ceramics usually have an amorphous structure or a nanocrystalline structure, and have excellent properties such as good high temperature stability, strong creep resistance, low density, low thermal expansion coefficient, and low thermal conductivity. Moreover, Si-B-C-N ceramics have good oxidation resistance and are the non-oxide ceramic materials with the lowest oxidation rate known so far, better than SiC and Si 3 N 4 Ceramic, so it can replace SiC, Si 3 N 4 And other materials, further improving the service temperature and service life of thermal structural ceramics and ceramic matrix composites, has great application poten...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/515C04B35/80C04B35/584
Inventor 刘永胜成来飞李赞张立同叶昉
Owner NORTHWESTERN POLYTECHNICAL UNIV
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