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Polycrystalline silicon thin film transistor based on solid-phase crystallization technology and manufacturing method thereof

A polysilicon thin film and a manufacturing method technology, applied in transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve problems such as many defects, high TFT threshold voltage, and small sub-threshold slope.

Inactive Publication Date: 2013-08-21
GUANGDONG SINODISPLAY TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The main problem of this technology is that the grain size of the LTPS film is small, there are many defects, and the quality is poor
This problem leads to high threshold voltage, low mobility and small sub-threshold slope of fabricated TFTs.

Method used

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  • Polycrystalline silicon thin film transistor based on solid-phase crystallization technology and manufacturing method thereof
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  • Polycrystalline silicon thin film transistor based on solid-phase crystallization technology and manufacturing method thereof

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Experimental program
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Embodiment 1

[0022] This embodiment provides a figure 1 TFTs shown, including:

[0023] Monocrystalline silicon wafer substrate;

[0024] Thermal silicon oxide layer on the substrate; 100nm thick polysilicon layer on the thermal silicon oxide layer, formed by SPC (solid phase crystallization) process, as the active layer of the transistor, with boron-doped bridging grains in the active layer (BG) lines, the width of BG lines is 0.5 μm, the distance between BG lines is 0.5 μm, and the doping density of boron ions is 2×10 15 / cm 2 , the polysilicon layer also has a source region and a drain region, a plurality of BG lines are parallel, and the parallel BG lines are perpendicular to the current direction.

[0025] Aluminum oxide (Al 2 o 3 ) layer, with a thickness of 47nm, used as a gate dielectric layer;

[0026] A gate electrode on the gate dielectric layer, wherein the channel width-to-length ratio (W / L) is 24 μm / 10 μm;

[0027] LTO (low temperature oxide, low temperature deposited ...

Embodiment 2

[0030] This embodiment provides a method for manufacturing the polysilicon thin film transistor provided in Embodiment 1, including: 1) covering the surface of a single crystal silicon substrate with 500nm thermal silicon oxide; 2) by low pressure chemical vapor deposition (LPCVD) Deposit 100nm amorphous silicon active layer; 3) perform SPC (solid phase crystallization) process: single crystal silicon substrate in N 2 Anneal at 600C for 24 hours to crystallize the amorphous silicon to form a polysilicon active layer; 4) Spin coat a layer of PR1075 photoresist on the surface of the polysilicon active layer, and then heat to 90 degrees for soft baking. The heating time is For 1 minute, the photoresist was exposed to light with a wavelength of 365nm, baked at 110°C for 1 minute, and then the sample was soaked in FHD-5 (2.38%TMAH) for 30 seconds for development, and the photoresist exposed to light The glue is dissolved in the developer solution, and the part that is not exposed t...

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Abstract

The invention provides a polycrystalline silicon thin film transistor which comprises a substrate, an insulating layer on the substrate, a polycrystalline silicon active layer, an aluminum oxide layer and a gate electrode, wherein the polycrystalline silicon active layer is manufactured through a solid-phase crystallization method, parallel bridging crystalline grain lines, a source region and a drain region are arranged in the polycrystalline silicon active layer, the aluminum oxide layer is deposited through ALD and arranged on the polycrystalline silicon active layer and used for serving as a gate medium layer, and the gate electrode is arranged on the aluminum oxide layer.

Description

technical field [0001] The present invention generally relates to a polysilicon thin film transistor (TFT), and more particularly, to a polysilicon thin film transistor and a manufacturing method thereof. Background technique [0002] Active-matrix organic light-emitting diode (AMOLED) displays using low-temperature polysilicon (LTPS) thin-film transistors (TFTs) as driving elements have become a hot spot in the market for small-sized display screens such as mobile phone displays. Compared with traditional amorphous silicon TFTs , LTPS-TFT has higher mobility and better stability, and is more suitable for the application of AMOLED displays. [0003] Most of the LTPS-TFTs used in AMOLED products on the market are based on excimer laser annealing (ELA) technology. The LTPS thin film obtained by laser annealing technology has a lower defect density, and the device made has a higher mobility. Lower threshold voltage and steeper subthreshold slope. The main problems of ELA tech...

Claims

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Application Information

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IPC IPC(8): H01L29/786H01L29/04H01L21/336
Inventor 周玮赵淑云郭海成
Owner GUANGDONG SINODISPLAY TECH
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