Surface modification process for improving luminance and dispersity of porous silicon

A surface modification, porous silicon technology, applied in the direction of silicon, can solve the problems of low luminous efficiency, poor dispersion of porous silicon, poor luminescence stability, etc., to achieve improved luminescence performance and dispersion performance, simple processing technology, strong practicability and The effect of operability
CN103288087AInactive Publication Date: 2013-09-11ZHEJIANG UNIV
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Patent Information

Authority / Receiving Office
CN Β· China
Current Assignee / Owner
ZHEJIANG UNIV
Publication Date
2013-09-11
Estimated Expiration
Not applicable Β· inactive patent

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Abstract

The invention discloses a surface modification process for improving luminance and dispersity of porous silicon. By adopting a method that chemical corrosion is combined with electrochemical corrosion, porous silicon of tidy pore structures can be prepared in a large area, subsequently the porous silicon is subjected to surface modification by using olefin and olefine acid, and Si-C bonds are introduced into the surfaces of silicon grains. The photoluminescence intensity of grains of the modified porous silicon is remarkably improved when being compared with that of the grains of porous silicon which is not subjected to surface modification; and meanwhile the luminance stability of the silicon grains in polar and non-polar solvents is greatly improved, and the phenomenon that the luminous intensity is attenuated along with the time extension is effectively reduced; and in addition, the dispersing property of the silicon grains wrapping olefine acid molecules in polar solvents is good. The surface modification process is simple, convenient to operate and applicable to production in a large scale, and has a good industrial application prospect.
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Description

technical field

[0001] The invention belongs to the field of porous silicon luminescence, and in particular relates to a surface modification process for enhancing the luminescence and dispersibility of porous silicon. Background technique

[0002] Since the discovery of the photoluminescence phenomenon of porous silicon at room temperature, researchers have carried out a lot of research work on the preparation and surface modification of porous silicon, mainly because porous silicon as a silicon-based luminescent material can be widely used in Photovoltaic technology, preparation of light-emitting diodes and photodetectors, and use as fluorescent markers, etc.

[0003] At present, the luminescence of porous silicon is mainly attributed to the quantum confinement effect and the surface of silicon particles.

[0004] The result of the combined effect of composition, a typical example is that with the oxidation of nanocrystalline particles in porous silicon, the size of nanoc...

Claims

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