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Surface modification process for improving luminance and dispersity of porous silicon

A surface modification, porous silicon technology, applied in the direction of silicon, can solve the problems of low luminous efficiency, poor dispersion of porous silicon, poor luminescence stability, etc., to achieve improved luminescence performance and dispersion performance, simple processing technology, strong practicability and The effect of operability

Inactive Publication Date: 2013-09-11
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In order to solve the problems of low photoluminescent efficiency of porous silicon, poor luminescence stability and poor dispersion of porous silicon in organic solvents in the prior art, the present invention provides a surface modification process for enhancing the luminescence and dispersibility of porous silicon

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  • Surface modification process for improving luminance and dispersity of porous silicon
  • Surface modification process for improving luminance and dispersity of porous silicon
  • Surface modification process for improving luminance and dispersity of porous silicon

Examples

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Embodiment 1

[0035] In this example, the prepared porous silicon particles were reacted with dodecene and undecylenic acid in 1,3,5 trimethylbenzene solvent to prepare modified porous silicon particles.

[0036] The preparation method of above-mentioned porous silicon is as follows;

[0037]Step 1: The (100) oriented P-type Czochralski monocrystalline silicon wafer with a resistivity of 10-20Ω.cm used in the preparation of porous silicon is mixed with deionized water, absolute ethanol, acetone, hydrogen peroxide and concentrated sulfuric acid respectively (30% hydrogen peroxide and 98% concentrated sulfuric acid are configured according to the volume ratio of 1:3) for ultrasonic cleaning. Use thermal evaporation equipment to grow aluminum electrodes on the back of the cleaned silicon wafer, and then use diluted hydrofluoric acid solution (5%) to react with the front of the silicon wafer for 5 minutes to remove the oxide layer on the front of the silicon wafer. React the front side of the ...

Embodiment 2

[0042] In this example, the prepared porous silicon particles were reacted with octadecene and undecylenic acid in 1,3,5 trimethylbenzene solvent to prepare modified porous silicon particles.

[0043] The preparation method of above-mentioned porous silicon is as follows;

[0044] Step 1: The (100) crystal-oriented N-type Czochralski monocrystalline silicon wafer with a resistivity of 10-20 Ω.cm used in the preparation of porous silicon is mixed with deionized water, absolute ethanol, acetone, hydrogen peroxide and concentrated sulfuric acid respectively. (30% hydrogen peroxide and 98% concentrated sulfuric acid are configured according to the volume ratio of 1:3) for ultrasonic cleaning. Use thermal evaporation equipment to grow aluminum electrodes on the back of the cleaned silicon wafer, and then use diluted hydrofluoric acid solution (20%) to react with the front of the silicon wafer for 10 minutes to remove the oxide layer on the front of the silicon wafer.

[0045] The ...

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Abstract

The invention discloses a surface modification process for improving luminance and dispersity of porous silicon. By adopting a method that chemical corrosion is combined with electrochemical corrosion, porous silicon of tidy pore structures can be prepared in a large area, subsequently the porous silicon is subjected to surface modification by using olefin and olefine acid, and Si-C bonds are introduced into the surfaces of silicon grains. The photoluminescence intensity of grains of the modified porous silicon is remarkably improved when being compared with that of the grains of porous silicon which is not subjected to surface modification; and meanwhile the luminance stability of the silicon grains in polar and non-polar solvents is greatly improved, and the phenomenon that the luminous intensity is attenuated along with the time extension is effectively reduced; and in addition, the dispersing property of the silicon grains wrapping olefine acid molecules in polar solvents is good. The surface modification process is simple, convenient to operate and applicable to production in a large scale, and has a good industrial application prospect.

Description

technical field [0001] The invention belongs to the field of porous silicon luminescence, and in particular relates to a surface modification process for enhancing the luminescence and dispersibility of porous silicon. Background technique [0002] Since the discovery of the photoluminescence phenomenon of porous silicon at room temperature, researchers have carried out a lot of research work on the preparation and surface modification of porous silicon, mainly because porous silicon as a silicon-based luminescent material can be widely used in Photovoltaic technology, preparation of light-emitting diodes and photodetectors, and use as fluorescent markers, etc. [0003] At present, the luminescence of porous silicon is mainly attributed to the quantum confinement effect and the surface of silicon particles. [0004] The result of the combined effect of composition, a typical example is that with the oxidation of nanocrystalline particles in porous silicon, the size of nanoc...

Claims

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Application Information

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IPC IPC(8): C01B33/02
Inventor 李东升梁锋杨德仁
Owner ZHEJIANG UNIV
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