Preparation method of tin dioxide doped titanium dioxide based thin film acetone gas sensor

A technology of tin dioxide and titanium dioxide, which is applied in the direction of material resistance, can solve the problems of poor selectivity, high power consumption, and low sensitivity, and achieve the effects of good film quality, low working temperature, and high sensitivity

Inactive Publication Date: 2013-09-11
HEBEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

TiO 2 It is an important semiconductor gas-sensing material with excellent chemical stability, TiO 2 Thin films exhibit sensitive properties to various gases, such as: H 2 , O 2 , ethanol vapor, etc., showing a broad spectrum for a variety of gases, with poor selectivity and low sensitivity; in addition, TiO 2 The working temperature of the gas-sensitive film sensor is usually above 400°C, and the power consumption is relatively large

Method used

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  • Preparation method of tin dioxide doped titanium dioxide based thin film acetone gas sensor
  • Preparation method of tin dioxide doped titanium dioxide based thin film acetone gas sensor
  • Preparation method of tin dioxide doped titanium dioxide based thin film acetone gas sensor

Examples

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Effect test

Embodiment 1

[0022] Sol-gel method in Al 2 o 3 Fabrication of SnO-doped Ceramic Tubes and Silicon Wafers 2 TiO 2 thin film, the doping level is 4%.

[0023] 1 Preparation of doped raw material tin dioxide gel

[0024] With 4.37g of SnCl 4 ·5H 2 O was dissolved in 25mL of deionized water, and two drops of hydrochloric acid were added dropwise for stirring, and ammonia water was added dropwise at the same time, until the pH value of the solution changed to about 6, the dropwise addition of ammonia water was stopped. Stir for another 30 minutes, then leave to age at room temperature for 2 days. After obtaining the stratified sol, remove the supernatant and wash it several times, put it in a drying oven to dry, and obtain a gel; finally, put it in a muffle furnace for annealing at 200°C to obtain SnO 2 Gel powder.

[0025] 2 doped TiO 2 powder preparation

[0026] A. Doped SnO 2 with TiO 2 The molar ratio is 1:25, the calculated SnO 2 The mass of 102.6mg. Take 20mL of absolute et...

Embodiment 2

[0036] Sol-gel method in Al 2 o 3 Fabrication of SnO-doped Ceramic Tubes and Silicon Wafers 2 TiO 2 Thin film, the doping amount is 2%.

[0037] 1 Preparation of doped raw material tin dioxide gel

[0038] With 4.37g of SnCl 4 ·5H 2 O was dissolved in 25mL of deionized water, and two drops of hydrochloric acid were added dropwise for stirring, and ammonia water was added dropwise at the same time, until the pH value of the solution changed to about 6, the dropwise addition of ammonia water was stopped. Stir for another 30 minutes, then leave to age at room temperature for 2 days. After obtaining the stratified sol, remove the supernatant and wash it several times, put it in a drying oven to dry, and obtain a gel; finally, put it in a muffle furnace for annealing at 200°C to obtain SnO 2 Gel powder.

[0039] 2 doped TiO 2 powder preparation

[0040] A. Doped SnO 2 with TiO 2 The molar ratio of SnO is 1:50, the calculated SnO 2 The mass of 51.3mg. Take 20mL of abso...

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Abstract

The invention discloses a preparation method of a tin dioxide doped titanium dioxide based thin film acetone gas sensor. The preparation method comprises the following steps of: firstly, preparing an SnCl4.5H2O solution with the concentration of 14.9%; dropping hydrochloric acid and ammonia water until the pH (Potential of Hydrogen) value of the solution is about 6 before the dropping of the ammonia water stops; agitating for 30min, ageing the mixture for 2 days at room temperature, and drying the aged mixture; preparing a butyl titanate solution with the concentration of 23.1% from absolute ethyl alcohol; mixing de-ionized water and acetic acid according to the volume ratio of 1:1; weighing prepared SnO2 powder and dissolving the powder into the mixed solution; adding SnO2 and TiO2 in a mol ratio of 1:(25-50); standing for three hours; drying the obtained mixture at 100 DEG C for 2 hours, and crushing the dried mixture in an agate mortar to obtain nano TiO2 powder doped with SnO2; mixing the powder and methylcellulose in a ratio of 1:1; coating the mixture on a ceramic pipe; annealing the pipe at 500 DEG C to obtain the sensor. A sensor is high in sensitivity to acetone, short in response recovering time and low in working temperature.

Description

technical field [0001] The invention belongs to the field of gas sensing elements, in particular to a titanium dioxide (TiO 2 ) film has a high selectivity to acetone gas sensing element preparation method. Background technique [0002] The gas sensor is the core component of the gas sensor. In the gas sensitive film sensor, TiO 2 As an n-type semiconductor material, it has unique optical, electrical and chemical properties. TiO 2 It is an important semiconductor gas-sensing material with excellent chemical stability, TiO 2 Thin films exhibit sensitive properties to various gases, such as: H 2 , O 2 , ethanol vapor, etc., showing a broad spectrum for a variety of gases, with poor selectivity and low sensitivity; in addition, TiO 2 The working temperature of the gas-sensitive film sensor is usually above 400°C, and the power consumption is relatively large. Contents of the invention [0003] The technical problem to be solved by the present invention is to overcome t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/12
Inventor 何平潘国峰高金雍白卫芹杨帆
Owner HEBEI UNIV OF TECH
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