High efficient three-lamination-layer heterojunction film solar cell and preparation method thereof

Abstract

The utility model provides a high efficient three-lamination-layer heterojunction film solar cell which comprises three sub cells in stacked series connection. The first sub cell is a bottom cell which is a PN junction structure formed by a P1 layer and an N1 layer, the P1 layer is a CuInSe2 material, and the N1 layer is a CdS material. The second cell is a middle cell, the third cell is a top cell, and both the second cell and the third cell are NIP structures. A transition layer with the 10nm thickness is arranged between the first cell and the second cell. A intrinsic amorphous silicon material is employed, contact interfaces of the transition layer with the first cell and the second cell are subjected to processing of plasma bombardment. A SiOx intermediate layer is plated between the second cell and the third cell. The first cell is plated on a glass substrate with a back electrode molybdenum layer. The top of the third cell is orderly plated with a conductive window layer, an antireflection layer and a gate electrode. According to the high efficient three-lamination-layer heterojunction film solar cell, the photoelectric conversion efficiency is raised, the unit cost is effectively reduced, the structure performance of the cell is stable, and the stability of electrical properties in long-term use can be ensured.

Description

technical field [0001] The invention relates to a solar cell, in particular to a high-efficiency triple-layer heterojunction thin-film solar cell and a preparation method thereof. Background technique [0002] Si-based thin-film solar cells have the advantages of high sunlight absorption coefficient, small temperature coefficient affecting cell efficiency, low production cost, and suitable for large-scale large-scale production. It is the film with the highest degree of industrialization and the largest actual production scale among all thin-film solar cells. Solar battery. The development of silicon-based thin-film solar cells is from single-junction a-Si to double-junction microcrystalline silicon germanium μc-Si / μc-SiGe, the optical band gap of μc-Si / μc-SiGe cells is 1.1-1.25eV, and its conversion rate is only It is 10%, and the efficiency is low, which needs to be further improved after technological innovation, so as to reduce the unit cost; while CuInSe 2 It is a com...

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Problems solved by technology

The development of silicon-based thin-film solar cells is from single-junction a-Si to double-junction microcrystalline silicon germanium μc-Si / μc-SiGe, the optical band gap of μc-Si / μc-SiGe cells is 1.1-1.25eV, and its conversion rate is only It is 10%, and the efficiency is low, which needs to be further improved after technological innovation, so as to reduce the unit cost; while CuInSe 2 It is a compound semiconductor material with a direct bandgap, which has an ideal optical bandgap value of up to 1.04eV. If CuInSe 2 Combined application to Si-based thin-film solar cells to make a heterojunction thin-film solar cell with a three-layer structure can not only expand the absorption wavelength range of sunlight, improve photoelectric conversion efficiency, but also reduce unit cost, but how to combine the two Application has always been a difficult problem in the industry, and it still needs to be explored and innovated

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