Method for transplanting silicon nanowire array and preparing simple device thereof

Abstract

The invention discloses a method for transplanting a silicon nanowire array and preparing a simple device thereof. A multihole silver film prepared on a clean silicon wafer is utilized to act as catalytic metal; the silicon nanowire array is prepared through etching the multihole silver film in hydrofluoric acid or hydrogen peroxide; a silicon-silicon oxide core-shell structure is formed by oxidizing the silicon nanowire array in high-temperature water vapors; the silicon-silicon oxide core-shell structure is placed in a high-temperature aqueous solution of ammonia, and a silicon nanowire array structure detached from a silicon lining is prepared through silicon oxide blocking and silver assisted ammonia water etching. Transplantation of the nanowire array is realized by utilizing a target substrate whose surface is coated by an adhesive material; or an insulating material is used to fix and support the silicon nanowire array and acts as an intermediate insulating layer, the silicon nanowire array is transplanted to a flexible substrate whose surface is coated by a conducting adhesive material, and another layer of a conductive material is covered so as to prepare a simple and flexible breakover circuit device with good ohmic contact. The method disclosed by the invention is simple to operate and low in cost, and can be applied to mass production.

Description

technical field [0001] The invention relates to a fabrication technology of silicon nanowire array devices, in particular to a method for transplanting a silicon nanowire array and a simple device fabrication method. Background technique [0002] Due to its very large surface-to-body ratio and unique electronic and optical properties, silicon nanowire arrays have important application prospects in photovoltaics, light detection, sensors, optics and flexible electronic devices. [0003] The methods of preparing silicon nanowire arrays in the prior art are mainly through physical or chemical methods, such as reactive ion etching and wet chemical etching, etc. The common point of these methods is that the nanowires are grown on rigid substrates. , thus severely limiting its application range. Therefore, the development of simple and efficient silicon nanowire array transplantation technology is crucial. SUMMARY OF THE INVENTION [0004] The purpose of the present invention ...

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Problems solved by technology

[0003] The method of preparing silicon nanowire arrays in the prior art is mainly through physical or chemical methods, such as reactive ion etching and wet chemical etching, etc. The common point of these methods is that the nanowires are all grown on a rigid substrate , thus severely limiting its scope of application

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