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Preparation method of solar cell light absorption layer

A technology for solar cells and light absorbing layers, applied in coatings, circuits, electrical components, etc., can solve problems such as adverse effects on carrier mobility, increase in film defects, and small film grains

Active Publication Date: 2013-10-23
SHENZHEN INST OF ADVANCED TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the traditional process of preparing the solar cell light-absorbing layer, it generally directly deposits copper indium gallium selenide on the substrate at high temperature. In the finally prepared light-absorbing layer, the interface between the substrate and the light-absorbing layer The upper gallium content is higher, and the enrichment of gallium will form a copper-gallium-selenide ternary phase at the interface, and the prepared thin film grains are too small, which affects the crystal quality. When the grains are small, there will be more grain boundaries, which will cause thin film defects. increase, which has an adverse effect on the mobility of carriers

Method used

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  • Preparation method of solar cell light absorption layer

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Experimental program
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Effect test

Embodiment 1

[0061] At room temperature, the substrate coated with the molybdenum film layer was placed on the sample holder of the magnetron sputtering chamber, and the magnetron sputtering chamber was evacuated. Introduce argon gas into the magnetron sputtering chamber, turn on the heating power supply of the copper indium diselenide ternary alloy target, adjust the output heating power of the power supply to 100W, and close the baffle on the copper indium diselenide ternary alloy target, Perform pre-sputtering on the copper indium diselenide ternary alloy target for 5 minutes. Open the baffle above the copper indium diselenide ternary alloy target, and continue sputtering for 6 minutes to form a copper indium selenide thin film on the substrate. The copper indium selenide film is heated, and the temperature is gradually raised to 500° C. within 3 minutes, and maintained at 500° C. for 3 minutes, so that the copper indium selenide film is crystallized to form a copper indium selenide tra...

Embodiment 2

[0063] At room temperature, the substrate coated with the molybdenum film layer was placed on the sample holder of the magnetron sputtering chamber, and the magnetron sputtering chamber was evacuated. Introduce argon gas into the magnetron sputtering chamber, turn on the heating power supply of the copper indium diselenide ternary alloy target, adjust the output heating power of the power supply to 120W, and close the baffle on the copper indium diselenide ternary alloy target, Perform pre-sputtering on the copper indium diselenide ternary alloy target for 5 minutes. Open the baffle above the copper indium diselenide ternary alloy target, and continue sputtering for 8 minutes to form a copper indium selenide thin film on the substrate. The copper indium selenide film is heated, and the temperature is gradually raised to 500° C. within 3 minutes, and maintained at 500° C. for 5 minutes, so that the copper indium selenide film is crystallized to form a copper indium selenide tra...

Embodiment 3

[0065] At room temperature, the substrate coated with the molybdenum film layer was placed on the sample holder of the magnetron sputtering chamber, and the magnetron sputtering chamber was evacuated. Introduce argon gas into the magnetron sputtering chamber, turn on the heating power supply of the copper indium diselenide ternary alloy target, adjust the output heating power of the power supply to 120W, and close the baffle on the copper indium diselenide ternary alloy target, Perform pre-sputtering on the copper indium diselenide ternary alloy target for 5 minutes. Open the baffle above the copper indium diselenide ternary alloy target, and continue sputtering for 10 minutes to form a copper indium selenide thin film on the substrate. The copper indium selenide film is heated, and the temperature is gradually raised to 500° C. within 3 minutes, and maintained at 500° C. for 5 minutes, so that the copper indium selenide film is crystallized to form a copper indium selenide tr...

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Abstract

The invention relates to a preparation method of a solar cell light absorption layer. The method comprises the steps of: conducting deposition on a substrate by means of a magnetron sputtering technique to form a copper indium selenium film; subjecting the copper indium selenium film to high temperature annealing to crystallize the copper indium selenium film so as to form a copper indium selenium transition layer on the substrate; by means of magnetron sputtering of a copper indium gallium diselenide quaternary alloy target, depositing a copper indium gallium selenium film on the copper indium selenium transition layer, and carrying out high temperature crystallization so as to obtain the solar cell light absorption layer. According to the preparation method of the solar cell light absorption layer, the copper indium selenium transition layer with good crystal quality is firstly formed on the substrate through magnetron sputtering, then the solar cell light absorption layer made of a copper indium gallium selenium material is formed on the basis of the copper indium selenium transition layer, thus facilitating the formation of high quality copper indium gallium selenium crystal grains. Therefore, the solar cell light absorption layer has good crystal quality, and the quality of the solar cell light absorption layer is improved.

Description

technical field [0001] The invention relates to photovoltaic technology, in particular to a method for preparing a light absorbing layer of a solar cell. Background technique [0002] Copper Indium Gallium Selenium CuIn x Ga 1-x Se 2 (CIGS) thin-film solar cells have the characteristics of high conversion efficiency, low cost, and good stability, and are one of the most promising thin-film solar cells. Among them, copper indium gallium selenide thin film is often used as the light absorption layer in thin film solar cells. So far, research by the EMPA Institute in Switzerland has shown that the photoelectric conversion efficiency of copper indium gallium selenide thin film solar cells based on the three-step co-evaporation process has reached 20.4%, which is the highest conversion efficiency record for copper indium gallium selenide thin film solar cells. . [0003] In recent years, by sputtering copper indium gallium diselenide (CuInGaSe 2 ) The method of preparing co...

Claims

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Application Information

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IPC IPC(8): C23C14/04C23C14/02C23C14/35H01L31/18
CPCY02P70/50
Inventor 郭延璐肖旭东杨春雷顾光一冯叶程冠铭鲍浪于冰徐苗苗
Owner SHENZHEN INST OF ADVANCED TECH