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Surface-enhanced Raman substrate, preparation method and application thereof

A surface-enhanced Raman and substrate technology, applied in Raman scattering, material excitation analysis, etc., can solve the problems of poor enhancement effect, difficult preservation and uniform distribution of colloidal particles, and achieve excellent Raman activity, which is beneficial to industrial production. , the effect of easy availability of raw materials

Inactive Publication Date: 2013-10-23
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the above-mentioned colloidal particles are not easy to preserve, and due to the existence of surface tension, colloidal gold particles or colloidal silver particles are not easy to be dried on glass slides by liquid to obtain a uniformly distributed substrate.
In addition, the stability of the substrate obtained by electrochemical method is good, but the enhancement effect is not good

Method used

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  • Surface-enhanced Raman substrate, preparation method and application thereof
  • Surface-enhanced Raman substrate, preparation method and application thereof
  • Surface-enhanced Raman substrate, preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0066] Use boron-doped P-type silicon wafers (that is, P-type B dope) for electrolysis and immersion plating. The specific steps are as follows:

[0067] (1) Preparation of the silicon wafer: place the silicon wafer in H with a volume ratio of 7:3 2 SO 4 (98% by weight) and H 2 o 2 (30% by weight) in the mixed solution, wash at 120° C. for 1 hour, then rinse with deionized water;

[0068] (2) Preparation of porous silicon substrate: The electrolytic cell with the upper and lower openings, the O-shaped plastic gasket and the silicon wafer prepared in step (1) are closely attached from top to bottom to form an open electrolytic cell with the silicon wafer as the bottom. , then add electrolytic solution in this exposed electrolytic cell, this electrolytic solution is made up of ethanol and hydrofluoric acid, and the volume ratio of ethanol and hydrofluoric acid (40% by weight aqueous solution) is 1: 3;

[0069] Wherein, make the aluminum foil close to the silicon chip for co...

Embodiment 2

[0073] Use boron-doped P-type silicon wafers (that is, P-type B dope) for electrolysis and immersion plating. The specific steps are as follows:

[0074] (1) Preparation of the silicon wafer: place the silicon wafer in H with a volume ratio of 7:3 2 SO 4 (98% by weight) and H 2 o 2 (30% by weight) in the mixed solution, wash at 120° C. for 1 hour, then rinse with deionized water;

[0075] (2) Preparation of porous silicon substrate: The electrolytic cell with the upper and lower openings, the O-shaped plastic gasket and the silicon wafer prepared in step (1) are closely attached from top to bottom to form an open electrolytic cell with the silicon wafer as the bottom. , then add electrolytic solution in this exposed electrolytic cell, this electrolytic solution is made up of ethanol and hydrofluoric acid, and the volume ratio of ethanol and hydrofluoric acid (40% by weight aqueous solution) is 1: 3;

[0076] Wherein, make the aluminum foil close to the silicon chip for co...

Embodiment 3

[0080] Use boron-doped P-type silicon wafers (that is, P-type B dope) for electrolysis and immersion plating. The specific steps are as follows:

[0081] (1) Preparation of the silicon wafer: place the silicon wafer in H with a volume ratio of 7:3 2 SO 4 (98% by weight) and H 2 o 2 (30% by weight) in the mixed solution, wash at 120° C. for 1 hour, then rinse with deionized water;

[0082] (2) Preparation of porous silicon substrate: The electrolytic cell with the upper and lower openings, the O-shaped plastic gasket and the silicon wafer prepared in step (1) are closely attached from top to bottom to form an open electrolytic cell with the silicon wafer as the bottom. , then add electrolytic solution in this exposed electrolytic cell, this electrolytic solution is made up of ethanol and hydrofluoric acid, and the volume ratio of ethanol and hydrofluoric acid (40% by weight aqueous solution) is 1: 3;

[0083] Wherein, make the aluminum foil close to the silicon chip for co...

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Abstract

The invention provides a preparation method of a surface-enhanced Raman substrate. The method comprises the following steps of: electrolyzing a silicon wafer in an electrolyte with hydrofluoric acid to prepare a porous silicon substrate; immersing the porous silicon substrate into a silver nitrate aqueous solution to react, then taking the porous silicon substrate out, and subsequently, drying the porous silicon substrate to prepare the surface-enhanced Raman substrate. The invention also provides an application of the surface-enhanced Raman substrate prepared by the method in trace detection of a surface-enhanced Raman spectrum, in particular an application in TNT (trinitrotoluene) detection.

Description

technical field [0001] The invention relates to a surface-enhanced Raman substrate and a preparation method thereof, and also relates to the application of the substrate in trace detection. Background technique [0002] Since Fleischmann realized the detection of pyridine molecules adsorbed on the electrode through the silver electrode in the experiment in 1974, surface-enhanced Raman has become a research hotspot. [0003] Raman spectroscopy has the advantages of molecular fingerprint peaks and narrow band width. The signal intensity of surface-enhanced Raman spectroscopy can be stronger than that of ordinary Raman10 14 Times, therefore, surface-enhanced Raman spectroscopy is used in label-free detection, ultra-sensitive detection and other fields. [0004] Currently, the most commonly used surface-enhanced Raman substrates are clusters of colloidal gold particles or colloidal silver particles. However, the above-mentioned colloidal particles are not easy to preserve, an...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/65C25F3/12
Inventor 赖宇明王晶贺涛孙树清
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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