Noble metal ceramic film and preparation method thereof
A ceramic thin film and precious metal technology, applied in the field of design and preparation of new metal ceramic thin film materials, can solve the problems of surface plasmon resonance absorption effect, change the electronic structure of Ag metal, low melting point of alloy, etc., and achieve excellent anti-oxidation performance and cost. Inexpensive, inexpensive effects
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[0044] Example 1
[0045] Place the quartz wafer and (100) monocrystalline silicon wafer to be plated in the deposition chamber, pre-evacuate, and the background vacuum is 4×10 -4 Pa, heat the quartz wafer and (100) single crystal silicon wafer to a temperature of 150°C, while injecting Ar gas to increase the pressure of the vacuum chamber to 0.45 Pa, keep it for 30 minutes to desorb and remove the impurities physically adsorbed on the surface of the substrate , Which is beneficial to improve the bonding force between the film and the substrate; then close the passage of Ar gas, and re-pump the deposition chamber to 2×10 -4 Pa and Ar gas was introduced again to increase the pressure of the deposition chamber to 0.45 Pa; turn on the substrate RF bias, set its power to 100W and start it, sputter for 10 minutes, and further clean the substrate surface; turn off the cleaning bias and Turn on Al 2 O 3 Adjust the power of the target's radio frequency drive power to 120W, pre-sputtering...
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[0050] Example 2
[0051] Place the quartz plate to be plated in the deposition chamber, pre-evacuate, and the background vacuum is 3.6×10 -4 Pa, heat the quartz substrate to a temperature of 150 ℃, while injecting Ar gas to increase the pressure of the deposition chamber to 0.45 Pa, keep it for 30 minutes for desorption and remove the physically adsorbed impurities on the surface of the substrate, which is beneficial to improve the film and substrate. The bonding force between the slices; then close the passage of Ar gas, and re-pump the deposition chamber to 1.8×10 -4 Pa and Ar gas was introduced again to increase the pressure of the deposition chamber to 0.45 Pa; turn on the substrate RF bias, set its power to 100W and start it, sputter for 10 minutes, and further clean the substrate surface; turn off the cleaning bias and Turn on Al 2 O 3 Adjust the power of the target's radio frequency drive power to 120W, pre-sputtering for 60 minutes, turn on the drive power of Ag target a...
Example Embodiment
[0052] Example 3
[0053] Place the quartz substrate to be plated in the deposition chamber, pre-evacuate, and the background vacuum to 3.4×10 -4 Pa, heat the quartz substrate to a temperature of 150 ℃, and at the same time let in Ar gas, increase the pressure of the vacuum chamber to 0.45 Pa, keep it for 30 minutes to desorb, remove the physically adsorbed impurities on the substrate surface, and improve the film and substrate. The bonding force between the slices; then shut off the passage of Ar gas, and re-evacuate the vacuum chamber to 1.6×10 -4 Pa and Ar gas was introduced again to increase the pressure of the vacuum chamber to 0.45 Pa; turn on the substrate RF bias, set its power to 100W and start it, sputter for 10 minutes, and further clean the substrate surface; turn off the cleaning bias and Turn on Al 2 O 3 Adjust the power of the target's RF drive power to 120W, pre-sputtering for 60 minutes, and turn on the drive power of Ag target and Ti target at the same time, set...
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