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Obliquely-tangential gallium arsenide single crystal photo-thermal detector

A thermal detector and gallium arsenide technology, which is applied in the field of optical and thermal detector preparation, can solve the problems of complex preparation process, low damage threshold, and high cost, and achieve high detection sensitivity, high damage threshold, and low cost.

Inactive Publication Date: 2013-10-23
HEBEI UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the detection sensitivity of the above-mentioned thin-film detectors to continuous light and thermal radiation is very low and the preparation process is complicated, the cost is high, and the damage threshold is low, so it is not suitable for large-scale commercial promotion.
However, the perovskite oxide single crystal material can only detect radiation in the ultraviolet band and cannot detect thermal radiation, and its cost is also high

Method used

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Experimental program
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Effect test

Embodiment 1

[0029] Embodiment 1: Oblique-cut gallium arsenide single crystal optical and thermal detector detects 405nm continuous light.

[0030] 1. N-type silicon-doped gallium arsenide single-crystal slices (size 10×5mm) obliquely cut at 10 degrees by known thermal evaporation methods 2 , with a thickness of 0.3 mm and a carrier concentration of 10 18 / cm 3 ) to prepare two silver electrodes on the surface, the electrodes are rectangular (1×5mm 2 ), the distance between electrodes is 8mm;

[0031] 2. Use conductive silver glue to stick two copper wires with a diameter of 0.1mm on the two silver electrodes respectively as the lead wires of the two electrodes;

[0032] 3. Connect the other end of the two electrode leads to the voltmeter as the output voltage signal test end;

[0033] 4. Select a voltmeter with an accuracy of 0.012%, and use the above-mentioned gallium arsenide single crystal photothermal detector to measure the voltage signal output of the continuous laser (output wa...

Embodiment 2

[0035] Embodiment 2: Oblique-cut gallium arsenide single crystal optical and thermal detector detects 532nm continuous light.

[0036] 1. With step 1-4 in embodiment 1;

[0037] Figure 5 It is the waveform diagram of the output voltage signal generated when the 532nm continuous laser is irradiated on the surface of the detector recorded by the voltmeter. It can be seen that when the laser energy irradiated on the sheet is 50mW, the amplitude of the output voltage signal is as high as 2.8mV, and the light and heat detector has high detection sensitivity to visible light.

Embodiment 3

[0038] Embodiment 3: Oblique-cut gallium arsenide single crystal optical and thermal detector detects 980nm infrared continuous light.

[0039] 1. Use the known thermal evaporation method to obliquely cut N-type silicon-doped gallium arsenide single crystal wafer (size 10×5mm) at 5 degrees 2 , with a thickness of 0.3 mm and a carrier concentration of 10 18 / cm 3 ) to prepare two In electrodes on the surface, the electrodes are rectangular (1×5mm 2 ), the distance between electrodes is 8mm;

[0040] 2. Use solder to weld two copper wires with a diameter of 0.1mm on the two In electrodes respectively as the leads of the two electrodes;

[0041] 3. Connect the other end of the two electrode leads to the voltmeter as the output voltage signal test end;

[0042] 4. Select a voltmeter with an accuracy of 0.012%, and use the above-mentioned obliquely cut gallium arsenide single crystal photothermal detector to measure the voltage signal output of the continuous laser (output wave...

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Abstract

The invention provides an obliquely-tangential gallium arsenide single crystal photo-thermal detector which is composed of obliquely-tangential gallium arsenide single crystal wafers, a metal copper heat sink and a metal support sequentially, wherein the obliquely-tangential gallium arsenide single crystal wafers are bonded through heat conducting glue. Two symmetrical metal electrodes are arranged on the upper surfaces of the obliquely-tangential gallium arsenide single crystal wafers and serve as voltage signal output ends, and the voltage signal output ends of the obliquely-tangential gallium arsenide single crystal wafers are connected with the input ends of a voltmeter through electrode leads. The obliquely-tangential gallium arsenide single crystal photo-thermal detector has the advantages of being easy to prepare, low in cost, high in response sensitivity and capable of achieving full-wave band spectrum detection and all kinds of thermal radiation detection.

Description

technical field [0001] The invention relates to a low-cost, high-sensitivity, wide-band light and heat detector manufactured by obliquely cutting gallium arsenide single crystal slices, and belongs to the technical field of light and heat detector preparation. Background technique [0002] When the upper surface of the beveled gallium arsenide single crystal slice is heated by a light source or a heat source, a longitudinal temperature difference ΔT will be generated on the upper and lower surfaces of the slice. A transverse voltage signal is generated at the left and right ends of the surface, and the amplitude of the voltage signal is proportional to the difference ΔS of the Seebeck coefficients in the ab-axis and c-axis directions of gallium arsenide, the temperature difference ΔT and the bevel angle α. In recent years, new photo-thermal detectors made by using the transverse pyroelectric effect of materials have attracted much attention. Compared with traditional photon...

Claims

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Application Information

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IPC IPC(8): H01L35/28H01L31/09G01J1/42
Inventor 傅广生张洪瑞吴筱美王淑芳闫国英于威李晓苇
Owner HEBEI UNIVERSITY
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