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High-frequency nano-mechanical resonator based on grapheme materials and manufacturing technology thereof

A preparation process, graphene technology, applied in electrical components, impedance networks, etc., can solve problems such as many parasitic parameters and unsuitable for high-frequency applications, and achieve the effects of reducing pollution, high-quality graphene channels, and increasing resonant frequency.

Inactive Publication Date: 2013-11-27
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] At present, the device structure of graphene nanoelectromechanical systems (NEMS) mostly adopts the full back gate structure [Changyao Chen, Sami Rosenblatt, et al. Performance of Monolayer Graphene Nanomechanical Resonators with Electrical Readout. Nature nano. This structure is relatively mature in the device manufacturing process and can be produced in batches. However, due to too many parasitic parameters, this structure is not suitable for high-frequency applications.
The local back-gate graphene nanoelectromechanical resonator structure [YueHang Xu, Changyao Chen, et al.RF Electrical Transduction of Graphene Mechanical Resonators.Applied Physics Letters,2010,97(24):3111] proposed in 2010 is very suitable for high frequency However, there are still many challenges in its preparation process, such as how to transfer graphene to the local back gate flatly and without damage, and make the graphene surface free from pollution, as well as realize high-quality graphene channels; how to achieve more Small gate length devices, increasing the resonance frequency of graphene resonators, etc., these are the technical problems that are expected to be solved

Method used

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  • High-frequency nano-mechanical resonator based on grapheme materials and manufacturing technology thereof
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Embodiment 1

[0038] The preparation process of a high-frequency nanoelectromechanical resonator based on graphene material according to the above-mentioned process steps of the present embodiment, its specific operation steps are as follows:

[0039] Step 1: Spin-coat photoresist (PMMA) on the high-resistance silicon substrate 1, and use electron beams to etch the photoresist to make the required T-shaped gate metal electrode 2. The gate length is 500nm, and the gate length is 500nm. The width is 500 μm, and the side length of the square part is 120 μm×120 μm;

[0040] Step 2: Evaporate a layer of 1nm thick metal titanium and a 10nm thick layer of gold-platinum alloy on the surface of the high-resistance silicon substrate 1 spin-coated with photoresist in step 1 by evaporation; then put it in acetone for 5 minutes, Remove the excess photoresist and the metal attached to it, leaving only the formed T-shaped gate metal electrode 2 on the high-resistance silicon substrate 1;

[0041] Step 3:...

Embodiment 2

[0052] The silicon dioxide (SiO2) used to support the graphene beam 5 2 ) Dielectric layer 4, which should provide relatively smooth electrode contact, the thickness of its deposition is 100nm, the width of the graphene channel, that is, the distance between the source metal electrode 6 and the drain metal electrode 7 is 2000nm; other preparations The process conditions and operation steps are the same as those in Example 1, and a graphene-based high-frequency nanoelectromechanical resonator can also be produced.

[0053] The high-frequency nanoelectromechanical resonator based on graphene material prepared by the present invention, because graphene has characteristics such as two-dimensional planar structure, field-dependent electrical conductivity and high mechanical strength, therefore, the present invention is designed and prepared based on graphene material The nanoelectromechanical resonator (NEMS) electronic device prepared by the process has the characteristics of high...

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Abstract

The invention relates to a high-frequency nano-mechanical resonator based on grapheme materials and a manufacturing technology thereof and belongs to the technical field of communication electronic components. The high-frequency nano-mechanical resonator is of a novel structure. According to the manufacturing technology, grapheme can be transferred onto a local back gate in a flat and nondestructive mode, pollution to the surface of the grapheme in a component manufacturing process can be effectively reduced, a high-quality grapheme channel can be obtained, and then manufacturing of components with smaller gate lengths can be achieved. Due to the fact that high-frequency mechanical vibration signals can be read directly by means of a clamped beam and the local back gate, the electronic component can be used for wearable electronics, wireless communication equipment and the like. Due to the adoption of the clamped beam and the local back gate, influence of stray capacitance on high-frequency signal reading of the resonator can be reduced. The resonant frequency of the grapheme resonator can be effectively improved.

Description

technical field [0001] The invention relates to a communication electronic component, in particular to a graphene-based high-frequency nanoelectromechanical resonator and a preparation process thereof, belonging to the technical field of communication electronic components. Background technique [0002] Since the discovery of graphene, a two-dimensional substance composed of a layer of carbon atoms in 2004, it has quickly become a popular material in international research. Graphene is a form of several low-dimensional carbon structures with excellent Mechanical properties, 5 times harder than steel, the thinnest yet hardest material ever found. Because graphene has a unique tapered energy band structure with a linear dispersion relationship, it has excellent electronic properties. Compared with traditional silicon, gallium arsenide and other semiconductor materials, graphene has higher carrier mobility, Electron saturation rate and thermal conductivity. Graphene has excel...

Claims

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Application Information

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IPC IPC(8): H03H9/15H03H3/02
Inventor 徐跃杭孙岩卢啸李欧鹏张勇
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA