Novel crucible and manufacturing method thereof

Abstract

The invention provides a novel crucible, which is applied in a manufacturing process of monocrystalline silicon or polysilicon. The novel crucible comprises an upper ring part, a middle ring part and a lower bowl mounting part, which are connected in sequence, wherein the upper ring part is an annular hollow body and is formed in such a manner that a plurality of first arc-shaped combination pieces are arranged and stacked in parallel to the circumferential direction of the bottom part and are assembled through pins vertical to the bottom parts, the side face of the upper ring part is provided with a gap parallel to the axial direction, and a connecting mechanism is arranged on the gap; the middle ring part is an annular hollow body and is formed in such a manner that a plurality of second arc-shaped combination pieces are arranged and stacked in parallel to the circumferential direction of the bottom part and are assembled through pins vertical to the bottom parts, the side face of the middle ring part is provided with a gap parallel to the axial direction, and a connecting mechanism is arranged on the gap; the lower bowl mounting part is an arc-shaped bowl body and comprises a plurality of third combination pieces and a bowl bottom, and the third combination pieces are vertically connected with the bowl bottom to form a bowl wall. The crucible provided by the invention is high in cost performance, strong in corrosion resistance, capable of effectively resisting against erosion of silicon vapor and long in service life.

Description

technical field [0001] The invention relates to the application of a carbon fiber composite material in the manufacturing process of monocrystalline silicon or polycrystalline silicon, in particular to a new crucible made of carbon fiber composite material and a processing and manufacturing method of the new crucible. Background technique [0002] In the production of single crystal silicon, the Czochralski method (CZ method) is commonly used at present, which is a method of pulling a single crystal from a melt along the vertical direction. In prior art devices, there is a component that is a graphite crucible, which is used to carry the inner quartz crucible. During use, due to the different expansion coefficients of the quartz crucible and the graphite crucible, and the corrosion reaction between silicon vapor and graphite, there are problems such as cracking of the graphite crucible and loss of strength due to erosion. Moreover, as the diameter of the crystal grown by mo...

AI Technical Summary

Problems solved by technology

[0003] 1. There is thermal stress and silicon vapor erosion, resulting in crucible cracking and erosion loss;

[0004] 2. It needs sintering or vapor deposition or liquid deposition, which requires a lot of working hours and high cost;

[0005] 3. The larger the diameter, the greater the wall thickness requirement, and the higher the material cost

Images