A psoi lateral high voltage power semiconductor device

Abstract

The invention relates to the technology of semiconductors, in particular to a PSOI transverse high-voltage power semiconductor device. The transverse high-voltage MOSFET is characterized in that a second conductive type semiconductor buried layer is introduced below a source end, current carries are prevented from being too concentrated at the source end, power consumption of the device at the source end is reduced, and therefore natural heat effect of the device is improved; even doping is adopted in a first drift region of a second conductive type semiconductor, doping relatively high in concentration is adopted in a second drift region of the second conductive type semiconductor, electrical resistivity of the drift regions can be reduced, specific on-resistance of the device is reduced, and therefore power consumption of the device is reduced, and temperature of the device is lowered. The PSOI transverse high-voltage power semiconductor device has the advantages of being good in self-heating effect, low in on-resistance, high in voltage resistance, small in domain area and the like, and technological difficulty and cost are reduced.

Description

technical field [0001] The invention relates to semiconductor technology, in particular to a PSOI (Partial Silicon-On-Insulator) lateral high-voltage power semiconductor device. Background technique [0002] SOI (Silicon-On-Insulator) has the characteristics of ideal dielectric isolation, high integration, small parasitic effects, and strong radiation resistance. It is a promising low-power device, especially suitable for radio frequency amplifiers or micro power integrated circuits. However, SOI currently faces two problems: (1) The buried oxide layer blocks the potential lines from penetrating into the substrate, making the power lines of the top silicon dense, and avalanche breakdown occurs in advance, resulting in a low breakdown voltage of SOI high-voltage power devices; (2) ) The poor thermal conductivity of the buried oxide layer prevents the heat generated in the active region from being introduced into the substrate, resulting in high device temperature and obvious...

AI Technical Summary

Problems solved by technology

However, SOI currently faces two problems: (1) The buried oxide layer blocks the potential lines from penetrating into the substrate, making the power lines of the top silicon dense, and avalanche breakdown occurs in advance, resulting in a low breakdown voltage of SOI high-voltage power devices; (2) ) The poor thermal conductivity of the buried oxide layer prevents the heat generated in the active area from being introduced into the substrate, resulting in high device temperature and obvious self-heating effect

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