Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Novel copolymer based on naphthalene nucleus, preparation method thereof and ternary electric storage device prepared therefrom

A storage device and copolymer technology, applied in the field of ternary electrical storage devices, can solve the problems of unclear storage mechanism and lack of functional materials, and achieve the effects of mature device fabrication process, great value and stable device performance.

Inactive Publication Date: 2014-02-05
SUZHOU UNIV
View PDF1 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are very few examples of such ternary electrical storage devices reported, possibly because of the lack of suitable functional materials or the unclear mechanism for achieving storage.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Novel copolymer based on naphthalene nucleus, preparation method thereof and ternary electric storage device prepared therefrom
  • Novel copolymer based on naphthalene nucleus, preparation method thereof and ternary electric storage device prepared therefrom
  • Novel copolymer based on naphthalene nucleus, preparation method thereof and ternary electric storage device prepared therefrom

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] The synthesis of embodiment one and two kinds of novel copolymers PMNB and PMNN based on naphthalene ring, its synthetic steps are as follows:

[0037] (1) Synthesis of 2-(1-naphthyl ether)-ethanol:

[0038] Add 14.0g KOH, 2.88g (20mmol) of 1-naphthol, and 80ml of DMF into a 100mL round-bottom flask, react for 45min, add 2.8mL (40mmol) of 2-chloroethanol dropwise, raise the temperature to 110°C for 10h, pour into water to wash, Extracted 3 times with dichloromethane, anhydrous Na 2 SO 4 Dry and remove the solvent by rotary evaporation. The obtained product was subjected to column chromatography (petroleum ether: ethyl acetate = 10:1). Freeze at low temperature to obtain pale pink solid, yield: 90%.

[0039] 1H-NMR(DMSO,400MHz),δ(ppm):3.87(m,2H),4.16(d,J=4.49Hz,2H),4.99(s,1H),6.96(m,1H),7.36-7.56 (m,4H),7.86(d,J=6.68Hz,1H),8.26(s,1H).

[0040] (2) Synthesis of 4-bromo-N-(2-hydroxy-ethyl)-1,8-naphthalimide:

[0041] Add 2.76g (10mmol) 4-bromo-1,8-naphthalene anhyd...

Embodiment 2

[0057] Taking the polymer PMNB obtained in Example 1 as an electrical storage active material as an example, an electrical storage device with a sandwich structure was prepared, and the manufacturing procedure was as follows: the ITO conductive glass was cleaned with water, acetone, and isopropanol in ultrasonic waves for 10 to 30 minutes, respectively. , blow dry as the organic material deposition substrate and place it in a spin-coating apparatus; take 10-15 mg of polymer and dissolve it in re-distilled cyclohexanone, and spin-coat it at 2000 rpm in an air environment. After completion, put the device into Remove the solvent in a vacuum oven at 40°C. We can control the thickness of the organic film between 40 and 150 nm through the concentration of the polymer solution and the rotational speed of the spin coating; For the metal mask, hang a certain amount of aluminum wire on the tungsten wire of the vacuum coating machine, and then vacuum again until the vacuum degree in the ...

Embodiment 3

[0059] Figure 4 It represents the current flowing through the device when a continuous voltage is applied between the upper and lower electrodes for scanning. When a continuous voltage from 0 to –6.0V is applied to a point on the device, the current through the device is around –2.0V and –3.5 There are two instantaneous jumps around V, indicating that the device has gone through a transition from a low conduction state ("0" or OFF state) to an intermediate conduction state ("1" or ON1 state) to a high conduction state ("2" or ON2 state) transition (first scan). For PMNN, in the subsequent scan from 0 to -6.0V, the memory cell still maintains its high conduction state (second scan). The third scan is a 0 to –2.5V scan of another memory cell with a threshold voltage of –2.0V. In subsequent scans from 0 to –2.0V, the cell remains in an intermediate conduction state (“1”) even after power is turned off (fourth scan), when the voltage continues to increase to –6.0V, around –3.2V...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses ternary electric storage materials PMNB and PMNN prepared from a novel copolymer based on a naphthalene nucleus which is used as a functional group, wherein x is not less than 7.5 and less than 10, and y is greater than 0 and not greater than 2.5. The PMNB and PMNN disclosed by the invention are simple in synthesis process; a ternary data storage device with a sandwich structure of bottom electrode / organic film / top electrode is prepared from the PMNB and PMNN, the preparation process is mature, the device has stable performance, a data storage amount in a unit density exponentially grows compared with '0' and '1' binary data storage, and the ternary data storage device has a great value in future ultrahigh-density data storage applications.

Description

technical field [0001] The invention relates to an organic polymer electrical storage material, in particular to a new type of ternary copolymer electrical storage material based on naphthalene ring as a functional group, a preparation method and a corresponding ternary electrical storage device made thereof. Background technique [0002] Polymers of the D-A type are the subject of current research due to their potential application in many research areas of organic semiconductors, such as organic field-effect transistors (OFETs), organic light-emitting diodes (OLEDs), solar cells (OPVs) and organic memory (OMDs). and other fields. Especially in the field of organic storage, polymer electrical storage has attracted the attention of scientists from all over the world due to its distinct advantages such as high mechanical strength, low manufacturing cost, three-dimensional stackability and adjustable molecular structure. Polymers containing D-A fragments are the top priority ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C08F220/30C08F220/36H01L51/05H01L51/30H01L51/40
Inventor 路建美李华
Owner SUZHOU UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com