Semi-conductor laser device capable of outputting double-wavelength laser for optical mixing to generate THz waves and manufacturing method
A manufacturing method and a technology for outputting light, which are applied to the structure of optical waveguide semiconductors and the structure of active regions, etc., can solve the problems of increased volume, long assembly time, and increased cost, and achieve increased volume, long assembly time, and Effect of cost increase
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[0025] The present invention will be further described below in conjunction with the accompanying drawings.
[0026] As shown in the accompanying drawing, it is a schematic lateral cross-sectional view of a semiconductor laser with dual-wavelength output light mixed to generate terahertz waves provided by the present invention, including: substrate 1, N-type confinement layer 2, lower waveguide layer I3, and active layer I4 , Upper waveguide layer I5, P-type confinement layer 6, regeneration mechanism 7, N-type confinement layer 8, lower waveguide layer II9, active layer II10, upper waveguide layer II11, current blocking layer 12, P-type confinement layer 13, dioxide Silicon insulating layer 14 , lower N-type electrode 15 , upper P-type electrode 16 , and P-type ohmic contact layer 17 .
[0027] The specific preparation method of the present invention has the following steps:
[0028] Step 1, growing lower confinement layer I2, active layer I4, upper confinement layer I6, reg...
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