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Plasma physical and chemical codeposition apparatus and deposition method thereof

A chemical co-deposition and plasma technology, which is applied in the field of ion physics and chemical co-deposition devices, can solve the problems of expensive physical vapor deposition sputtering devices, etc., and achieve the effects of low device cost, simple deposition process operation, and fast deposition rate

Inactive Publication Date: 2014-02-19
SUZHOU HONGJIU AVIATION THERMAL MATERIALS TECH CO LTD
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Problems solved by technology

However, physical vapor deposition sputtering equipment is extremely expensive

Method used

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  • Plasma physical and chemical codeposition apparatus and deposition method thereof
  • Plasma physical and chemical codeposition apparatus and deposition method thereof

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Embodiment 1

[0036] Using graphite carbon as the workpiece and high-purity molybdenum disk as the target, the vacuum system is turned on to make the furnace in a vacuum state. Open the argon gas cylinder, feed argon gas into the furnace, and the computer system controls the flow, and cleans the surface of the workpiece for half an hour. Slowly open the hydrogen cylinder, pass it into the silane liquid inner tank, and reheat it to a certain temperature, and the computer system controls its flow. The silane flow into the vacuum deposition chamber is 10 sccm, the argon flow is 40 sccm, the working pressure in the vacuum chamber is 5Pa, the target voltage is -800V, and the workpiece voltage is -300V. After 1 h of deposition, a molybdenum-silicon carbide composite film with a thickness of about 4 μm can be obtained. The molybdenum-silicon carbide composite film sample and the molybdenum silicide coating sample were subjected to high-temperature oxidation tests. After high-temperature oxidation...

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Abstract

The invention provides a plasma physical and chemical codeposition apparatus and a deposition method thereof. The apparatus is a closed deposition chamber, the deposition chamber has 1-3 gas inlets, a gas outlet, an anode and two cathodes. The material of the inner wall of the deposition chamber is stainless steel, and a structural member in the deposition vacuum chamber is a metal and / or graphite material; the ultimate vacuum of the deposition chamber is below 10<-3>Pa, and the work gas pressure in the deposition chamber is 0.01-50Pa; gases of the 1-3 gas inlets are reaction gases comprising argon, silane, metal alkoxide and the like; and the anode is connected to the deposition chamber, the two cathodes are connected with a target material and a workpiece material respectively, the workpiece voltage is in a range of 0 - -1200V, the target material voltage is in a range of 0 - -1200V, and the workpiece surface temperature is 800-1200DEG C, and is a temperature of a local area nearby the workpiece material.

Description

technical field [0001] The invention relates to material surface modification technology, and particularly provides a plasma physical and chemical co-deposition device and a deposition method. Background technique [0002] A type of heat treatment technology that uses chemical and physical surface modification technology to change the chemical composition or structure of the material or workpiece surface to improve the performance of machine parts or materials. It includes chemical heat treatment; thin film coatings such as surface coatings (physical vapor deposition, chemical vapor deposition, etc.) and non-metallic coating technologies. Chemical vapor deposition technology has the advantages of simple equipment, convenient operation and maintenance, and strong flexibility, but the reaction temperature is high, the deposition rate is low (generally only a few microns to hundreds of microns per hour), and it is difficult to deposit locally; the gas involved in the deposition...

Claims

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Application Information

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IPC IPC(8): C23C14/22C23C16/44
Inventor 陈照峰吴王平
Owner SUZHOU HONGJIU AVIATION THERMAL MATERIALS TECH CO LTD
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