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A kind of organic field effect transistor and preparation method thereof

A technology of transistors and organic fields, applied in the field of organic field effect transistors and their preparation, can solve problems such as device performance degradation, failure to meet application requirements, and harsh heat resistance requirements, and achieve the effect of improving morphology and reducing erosion

Inactive Publication Date: 2015-12-09
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The main problem is that the size of the formed grains or the island structure formed by multiple grains is difficult to accurately control and cannot meet the application requirements; and the post-annealing process is time-consuming and labor-intensive, which requires the heat resistance of other functional layers in the device Harsh; at the same time, organic semiconductor materials are easily affected by water vapor or oxygen in the air, resulting in a decrease in the performance of the device

Method used

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  • A kind of organic field effect transistor and preparation method thereof
  • A kind of organic field effect transistor and preparation method thereof
  • A kind of organic field effect transistor and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0082] Clean the substrate composed of transparent substrate and transparent conductive ITO, and dry it with nitrogen after cleaning; spin-coat 100nmPS grid insulating layer on the surface of transparent conductive cathode ITO, and dry the formed film; The UV-sensitive adhesive-P3HT organic semiconductor layer (30nm) with a mass ratio of 1:1000 is spin-coated on the polar insulating layer; the raw materials of the UV-sensitive adhesive include the following components:

[0083]

[0084] Wherein the photoinitiator is an acetophenone derivative, the photosensitizer includes thioxanthraquinone and Michler's ketone, and the auxiliary agent includes an antistatic agent, a flame retardant and a coupling agent. After the spin coating, the organic semiconductor layer is cured by ultraviolet light; the gold source electrode and the drain electrode (10nm) are thermally evaporated on the organic semiconductor layer; and then the organic semiconductor layer is cured again. The measured...

Embodiment 2

[0086] Clean the substrate composed of transparent substrate and transparent conductive ITO, and dry it with nitrogen after cleaning; spin-coat a 600nmPS gate insulating layer on the surface of the transparent conductive cathode ITO, and dry the formed film; Spin-coating UV-sensitive adhesive on the pole insulating layer: P3HT mass ratio of UV-sensitive adhesive-organic semiconductor material composite layer (300nm) with a mass ratio of 1:1000; the weight percentage of the UV-sensitive adhesive consists of:

[0087]

[0088]Wherein the photoinitiator is an acetophenone derivative, the photosensitizer includes thioxanthraquinone and Michler's ketone, and the auxiliary agent includes an antistatic agent, a flame retardant and a coupling agent. After the spin coating, the organic semiconductor layer is cured by ultraviolet light; the gold source electrode and the drain electrode (50nm) are thermally evaporated on the organic semiconductor layer; and then the organic semiconduct...

Embodiment 3

[0090] Clean the substrate composed of transparent substrate and transparent conductive ITO, and dry it with nitrogen after cleaning; spin-coat a 400nmPS grid insulating layer on the surface of the transparent conductive cathode ITO, and dry the formed film; Spin-coating UV-sensitive adhesive on the pole insulating layer: P3HT mass ratio of UV-sensitive adhesive-organic semiconductor material composite layer (200nm) with a mass ratio of 3:1000; the weight percentage of the UV-sensitive adhesive consists of:

[0091]

[0092] Wherein the photoinitiator is an acetophenone derivative, the photosensitizer includes thioxanthraquinone and Michler's ketone, and the auxiliary agent includes an antistatic agent, a flame retardant and a coupling agent. After the spin coating, the organic semiconductor layer is cured by ultraviolet light; the gold source electrode and the drain electrode (50nm) are thermally evaporated on the organic semiconductor layer; and then the organic semiconduc...

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Abstract

The invention discloses an organic field effect transistor and a preparation method thereof. Its structure includes a substrate, a gate electrode, a gate insulating layer, an organic semiconductor layer, a source electrode and a drain electrode. The organic semiconductor layer is added with 0.1%-1 % UV-sensitive glue forms a composite layer of UV-sensitive glue-organic semiconductor material. The invention solves the problem that the crystal grain size is difficult to precisely control during the film-forming process of the soluble organic semiconductor material, achieves the purpose of in-situ control of the crystal grain or the size of the island structure formed by the aggregation of multiple crystal grains, and improves the organic field effect at the same time The air stability of the transistor has resulted in a high-performance organic field-effect transistor.

Description

technical field [0001] The invention relates to the technical field of electronic components, in particular to an organic field effect transistor and a preparation method thereof. Background technique [0002] Field-effect transistors are the mainstream research direction in the field of optoelectronics and electronic technology. Because they can work under low current and low voltage conditions, they have been widely used in large-scale integrated circuits. Field-effect transistors are mainly divided into two categories: non-field-effect transistors and organic field-effect transistors (OFET). OFETs were first reported by Tsumura in 1986 and have attracted widespread attention due to their potential applications in large-area displays, organic integrated circuits, radio frequency identification technology, and sensors. At present, organic field effect transistors can significantly improve the status quo in the field of electronic information dominated by non-field effect t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/05H01L51/30H01L51/40
CPCH10K71/10H10K85/113H10K85/623H10K10/466
Inventor 李杰于军胜施薇祁一歌
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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