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Niobium-rich lithium-doped potassium tantalate niobate single crystal and preparation method thereof

A technology of potassium tantalum niobate and single crystal, which is applied in the field of potassium tantalum niobate (KTN) crystal and its preparation, can solve the problem that the single crystal of potassium tantalum niobate with rich niobium and the crystal with low curie temperature of potassium tantalum niobate cannot be obtained. Low problems, to achieve the effect of no environmental pollution, controllable growth, simple process

Inactive Publication Date: 2014-02-26
HARBIN INST OF TECH
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0003] The purpose of the present invention is to solve the low Curie temperature of the existing low niobium tantalum niobate potassium crystal, and can not obtain rich niobium tantalum potassium niobate single crystal with the existing crystal growth method, and provide rich niobium doped lithium tantalum potassium niobate Single crystal and its preparation method

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  • Niobium-rich lithium-doped potassium tantalate niobate single crystal and preparation method thereof
  • Niobium-rich lithium-doped potassium tantalate niobate single crystal and preparation method thereof
  • Niobium-rich lithium-doped potassium tantalate niobate single crystal and preparation method thereof

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specific Embodiment approach 1

[0031] Specific implementation mode one: the rich niobium doped lithium tantalum potassium niobate single crystal of the present embodiment, its expression is K 0.95 Li 0.05 Ta 1-x Nb x o 3 , where x=0.50-0.90, the niobium-rich lithium-doped lithium tantalum potassium niobate single crystal has a tetragonal perovskite crystal structure at room temperature.

specific Embodiment approach 2

[0032] Specific embodiment two: the preparation method of the niobium-rich lithium-doped lithium tantalum potassium niobate single crystal described in specific embodiment one is carried out according to the following steps:

[0033] 1. According to potassium carbonate (K 2 CO 3 ), lithium carbonate (Li 2 CO 3 ), tantalum oxide (Ta 2 o 5 ) and niobium oxide (Nb 2 o 5 ) molar ratio is (1~1.25):0.05:(1-x):x, where x=0.50~0.90, and potassium carbonate (K 2 CO 3 ), lithium carbonate (Li 2 CO 3 ), tantalum oxide (Ta 2 o 5 ) and niobium oxide (Nb 2 o 5 ) powder and mix uniformly to obtain mixed powder;

[0034] 2. The mixed powder obtained in step 1 is ball milled;

[0035] 3. Put the mixed powder processed in step 2 into a mold, press it into a tablet, and then put the tablet in a muffle furnace to raise the temperature to 880~920℃ at a heating rate of 140~150℃ / h and keep it for 4~5h. Obtain niobium-rich lithium tantalum potassium niobate multichip;

[0036] 4. Pou...

specific Embodiment approach 3

[0040] Specific embodiment three: what this embodiment is different from specific embodiment two is potassium carbonate (K 2 CO 3 ), lithium carbonate (Li 2 CO 3 ), tantalum oxide (Ta 2 o 5 ) and niobium oxide (Nb 2 o 5 ) The purity of the powder is ≥99.99%; the others are the same as in the second embodiment.

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Abstract

The invention provides a niobium-rich lithium-doped potassium tantalate niobate single crystal and a preparation method thereof, which relates to a potassium tantalate niobate crystal and a preparation method thereof The objective of the invention is to overcome the technical problems that a conventional low-niobium potassium tantalate niobate crystal has a low Curie temperature and the niobium-rich lithium-doped potassium tantalate niobate single crystal cannot be prepared by using a conventional crystal growth method. The niobium-rich lithium-doped potassium tantalate niobate single crystal is expressed by the formula K0.95Li0.05Ta1-xNbxO3, wherein x is equal to 0.50 to 0.90. The method comprises the following steps subjecting potassium carbonate, lithium carbonate, tantalum oxide and niobium oxide powder to uniform mixing and ball milling and carrying out tableting; then carrying out presintering so as to obtain a polycrystal sheet; triturating the polycrystal sheet and subjecting the triturated polycrystal sheet to wet grinding so as to obtain a raw material for growth of a single crystal; and carrying out seed crystal inoculation, pulling and isodiameter growth in a Czochralski crystal growth furnace so as to obtain the niobium-rich lithium-doped potassium tantalate niobate single crystal. The single crystal has a phase-transition temperature of 310 to 500 K and can be used in leadless piezoelectric ferroelectric devices.

Description

technical field [0001] The invention relates to a potassium tantalum niobate (KTN) crystal and a preparation method thereof. Background technique [0002] As the basic industry for the development of human society, the material industry occupies a pivotal position in the national economy. Piezoelectric and ferroelectric materials, as an important class of functional materials, have been widely used in electroacoustic conversion devices such as ultrasonic detection, ultrasonic imaging, and high-strain drivers. The research on lead-free ferroelectric piezoelectric materials, which is non-polluting to the environment and harmless to human health, is mainly focused on ceramic materials. However, due to the high coercive field of ceramics, it is difficult to polarize and the piezoelectric performance is limited, so much research has not been done. good application. In view of the fact that the piezoelectric properties of ferroelectric single crystals far exceed those of similar...

Claims

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Application Information

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IPC IPC(8): C30B29/30C30B15/00
Inventor 李均李杨周忠祥
Owner HARBIN INST OF TECH
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