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Preparation method of P-type crystal silicon double-sided cell

A double-sided battery, crystalline silicon technology, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as restricted application scope and high production costs, and achieve the effects of increasing power generation, improving utilization, and saving production costs

Inactive Publication Date: 2014-03-19
ALTUSVIA ENERGY TAICANG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the high production cost restricts its application range, and with the sharp reduction of government subsidies, reducing the production cost of cells and improving power generation efficiency has become an urgent issue for manufacturers

Method used

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  • Preparation method of P-type crystal silicon double-sided cell

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Embodiment 1

[0026] A method for preparing a P-type crystalline silicon double-sided battery, the method comprising the following steps:

[0027] (a) P-type silicon substrate texturing:

[0028] Select a P-type silicon wafer with a resistivity of 0.3 ? Dilute about 10% hydrochloric acid and hydrofluoric acid for cleaning to remove surface impurities;

[0029] (b) Phosphorus is diffused on the front surface of the P-type silicon substrate to form a PN junction:

[0030] In a diffusion furnace at a temperature of 600°C, using POCl 3 Perform phosphorus diffusion to make the square resistance range 40-120? / □;

[0031] (c) Removal of phosphosilicate glass, back PN junction, and side PN junction:

[0032] In single-side etching equipment, use a mixed solution of 5% hydrofluoric acid and 50% nitric acid to etch the back surface and edge of the silicon wafer;

[0033] (d) Anti-reflection coating deposited on both sides:

[0034] On the front surface of the substrate, that is, on the PN junct...

Embodiment 2

[0040] A method for preparing a P-type crystalline silicon double-sided battery, the method comprising the following steps:

[0041] (a) P-type silicon substrate texturing:

[0042] Select a P-type silicon wafer with a resistivity of 5??cm, and use 1.0% potassium hydroxide solution to chemically etch the surface of the P-type single crystal silicon at 80°C to prepare a pyramid-shaped light-trapping structure texture, and then use Dilute about 10% hydrochloric acid and hydrofluoric acid for cleaning to remove surface impurities;

[0043] (b) Phosphorus is diffused on the front surface of the P-type silicon substrate to form a PN junction:

[0044] In a diffusion furnace at a temperature of 800°C, using POCl 3 Perform phosphorus diffusion to make the square resistance range 40-120? / □;

[0045] (c) Removal of phosphosilicate glass, back PN junction, and side PN junction:

[0046] In single-side etching equipment, use a mixed solution of 10% hydrofluoric acid and 60% nitric ac...

Embodiment 3

[0054] A method for preparing a P-type crystalline silicon double-sided battery, the method comprising the following steps:

[0055] (a) P-type silicon substrate texturing:

[0056] Select a P-type silicon wafer with a resistivity of 10??cm, and use 2.0% sodium hydroxide solution to chemically etch the surface of the P-type single crystal silicon at 85°C to prepare a pyramid-shaped light-trapping structure texture, and then use Dilute about 10% hydrochloric acid and hydrofluoric acid for cleaning to remove surface impurities;

[0057] (b) Phosphorus is diffused on the front surface of the P-type silicon substrate to form a PN junction:

[0058] In a diffusion furnace at a temperature of 900°C, using POCl 3 Perform phosphorus diffusion to make the square resistance range 40-120? / □;

[0059] (c) Removal of phosphosilicate glass, back PN junction, and side PN junction:

[0060] In single-side etching equipment, use a mixed solution of 15% hydrofluoric acid and 70% nitric acid...

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Abstract

The invention discloses a preparation method of a P-type crystal silicon double-sided cell. The preparation method comprises the following steps of felting and chemical cleaning, PN junction formation, film deposition performed on two sides, cell positive and negative pole preparation and sintering. Compared with the prior art, and according to the preparation method of the P-type crystal silicon double-sided cell of the invention, only one-time doping is required, and steps such as film splitting are not required, and therefore, a preparation process can be simpler, and original processes such as frequent high-temperature doping, mask manufacture and film splitting can be avoided, and as a result, preparation steps can be simplified, and preparation cost can be saved. The double-sided cell manufactured by using the preparation method provided by the technical schemes of the invention can fully utilize scattered light of sunlight on the ground, and therefore, the utilization rate of the sunlight can be improved, power generation amount of the cell can be increased.

Description

technical field [0001] The invention belongs to the field of solar battery manufacturing, and in particular relates to a preparation method of a P-type crystalline silicon double-sided battery. Background technique [0002] Against the backdrop of increasingly prominent problems such as energy scarcity, resource shortage, and environmental pollution, the use of natural resources for solar power generation has been regarded as a countermeasure to solve the problems of global warming and fossil fuel depletion, and has been favored by countries all over the world. However, the high production cost restricts its application range, and with the sharp reduction of government subsidies, reducing the production cost of cells and improving power generation efficiency has become an urgent issue for manufacturers. The double-sided battery can make full use of sunlight, not only the incident sunlight from the front but also the scattered light from the back, which improves the power gen...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCH01L31/1804Y02P70/50
Inventor 孙海平高艳涛杨灼坚邢国强
Owner ALTUSVIA ENERGY TAICANG