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Method for preparing Sb-doped p-type ZnO film by simple chemical vapor deposition method

A chemical vapor deposition, p-type technology, used in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problem of not reaching the ideal state, and achieve the effect of improving electrical parameters, simple equipment and low price

Inactive Publication Date: 2014-04-02
江苏欣和环境科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

”, the carrier concentration of the prepared p-ZnO film is 9.56×10 17 cm -3 , did not reach the ideal state

Method used

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  • Method for preparing Sb-doped p-type ZnO film by simple chemical vapor deposition method
  • Method for preparing Sb-doped p-type ZnO film by simple chemical vapor deposition method
  • Method for preparing Sb-doped p-type ZnO film by simple chemical vapor deposition method

Examples

Experimental program
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Embodiment 1

[0015] Use existing simple chemical vapor deposition equipment, such as tube furnaces. The substrate can be zinc oxide, gallium nitride, sapphire, silicon carbide, silicon, gallium arsenide, indium phosphide, calcium fluoride, quartz, glass, or metal, and the cleaning method before the deposition reaction is also the same as that of the prior art. Specifically, proceed as follows:

[0016] a. Fully mix the zinc source and the antimony source at a mass ratio of 5:1 to make the reaction source material, the zinc source is solid Zn powder with a purity of at least 99.99%, and the antimony source is Sb with a purity of 99.999% 2 o 3 powder and Sb powder with a purity of 99.99%, Sb 2 o 3 The mass ratio of powder to Sb powder is 2:1;

[0017] b. Put the reaction source material and substrate into the quartz boat. The sapphire is located 1.5cm below the reaction source material. The pressure is controlled at 10 Pa, the growth temperature is 600°C, the carrier gas is high-purity ...

Embodiment 2

[0022] The basic method is the same as that of Example 1, except that the grown sample is annealed in an oxygen atmosphere at a temperature of 750° C., and the annealing time is 50 minutes.

[0023] The scanning electron micrograph of sample after annealing in embodiment 2 is as figure 2 As shown, we found that the grain size of the sample became larger after annealing, and the grain boundary became less obvious, which further improved the doping quality of p-type ZnO, and its Hall mobility could reach 4cm 2 / V·s.

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Abstract

The invention discloses a method for preparing an Sb-doped p-type ZnO film by a simple chemical vapor deposition method. The method comprises the following steps: fully mixing a zinc source with an antimony source according to a mass ratio of 5 to 1 to prepare a reaction source material, wherein the zinc source is solid Zn powder with the purity of at least 99.99%, the antimony source is a mixture of Sb2O3 powder with the purity of 99.999% and Sb powder with the purity of 99.99%, and the mass ratio of the Sb2O3 powder to the Sb powder is 2 to 1; putting the reaction source material and a substrate arranged below the reaction source material by 1.5 cm into a quartz boat, and putting the quartz boat into a high-temperature heating region in a chemical vapor deposition system growth room, wherein the pressure in the growth room is 10 Pa, the growth temperature is 600 DEG C, carrier gas is high-purity argon gas with the flow of 300 sccm, the oxygen flow is 20 sccm, and the growth time is 30 minutes; closing oxygen, keeping the flow of the argon gas, reducing the growth temperature to be less than 300 DEG C, and taking out a product.

Description

technical field [0001] The invention relates to a method for growing a p-type ZnO film doped with Sb, which belongs to the field of semiconductor materials, in particular to a method for preparing a Sb-doped p-type ZnO film by a simple chemical vapor deposition method which can effectively increase carrier concentration. Background technique [0002] ZnO is a new type of - The family of direct wide-bandgap semiconductor materials, the bandgap at room temperature is 3.37eV, and the exciton binding energy is relatively high (up to 60meV). Therefore, ZnO material has become one of the ideal candidate materials for short-wavelength optoelectronic devices, especially in Blue-violet light-emitting diodes (LEDs) and lasers (LDs) have good application prospects and research and development values. ZnO thin films are one of the main varieties of ZnO materials, specifically n-type and p-type ZnO thin films. Since ZnO is an unintentionally doped n-type material, it will have a stro...

Claims

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Application Information

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IPC IPC(8): C23C16/40
Inventor 冯秋菊刘洋吕佳音唐凯李梦轲
Owner 江苏欣和环境科技有限公司
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