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Self-doped strontium titanate ferroelectric film and preparation method thereof

A ferroelectric thin film, strontium titanate technology, applied in self-doped strontium titanate ferroelectric thin film and its preparation, ferroelectric thin film field, can solve the problems of high cost, complex synthesis, low phase transition temperature, etc., and the method is simple Effect

Inactive Publication Date: 2014-06-04
HENAN UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The technical problem to be solved by the present invention is to solve the problems of low phase transition temperature, complex synthesis and high cost in the existing methods. The present invention provides a simpler method that can induce strontium titanate ferroelectric A novel method, that is, a self-doped strontium titanate ferroelectric thin film and its preparation method

Method used

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  • Self-doped strontium titanate ferroelectric film and preparation method thereof
  • Self-doped strontium titanate ferroelectric film and preparation method thereof
  • Self-doped strontium titanate ferroelectric film and preparation method thereof

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Embodiment 1

[0023] A method for preparing a self-doped strontium titanate ferroelectric thin film, comprising the following steps: step 1, respectively weighing strontium acetate, butyl titanate and acetylacetone according to a molar ratio of 1:1.015:0.7, and set aside;

[0024] Step 2, the strontium acetate taken by step 1 is all dissolved in 99.5% acetic acid with a purity of 99.5%, and an appropriate amount of ethylene glycol methyl ether is added after forming a transparent colorless solution, so that the molar concentration of strontium acetate in the solution reaches 0.4mol / L, Stir for 1 hour to form solution A, add the weighed butyl titanate into solution A, stir for 30 minutes to form solution B, and set aside;

[0025] Step 3: Add the acetylacetone weighed in step 1 into solution B, then add an appropriate amount of ethylene glycol methyl ether to dilute solution B until the molar concentration of strontium acetate reaches 0.3mol / L, then stir for 6-8 hours, and filter Remove the ...

Embodiment 2

[0030] A method for preparing a self-doped strontium titanate ferroelectric thin film, comprising the following steps: step 1, respectively weighing strontium acetate, butyl titanate and acetylacetone according to a molar ratio of 1:1.02:0.7, and set aside;

[0031] Step 2, the strontium acetate taken by step 1 is all dissolved in 99.5% acetic acid with a purity of 99.5%, and an appropriate amount of ethylene glycol methyl ether is added after forming a transparent colorless solution, so that the molar concentration of strontium acetate in the solution reaches 0.4mol / L, Stir for 1 hour to form solution A, add the weighed butyl titanate into solution A, stir for 30 minutes to form solution B, and set aside;

[0032] Step 3: Add the acetylacetone weighed in step 1 into solution B, then add an appropriate amount of ethylene glycol methyl ether to dilute solution B until the molar concentration of strontium acetate reaches 0.3mol / L, then stir for 6-8 hours, and filter Remove the i...

Embodiment 3

[0035] A method for preparing a self-doped strontium titanate ferroelectric thin film, comprising the following steps: step 1, respectively weighing strontium acetate, butyl titanate and acetylacetone according to a molar ratio of 1:1.017:0.7, and set aside;

[0036] Step 2, the strontium acetate taken by step 1 is all dissolved in 99.5% acetic acid with a purity of 99.5%, and an appropriate amount of ethylene glycol methyl ether is added after forming a transparent colorless solution, so that the molar concentration of strontium acetate in the solution reaches 0.4mol / L, Stir for 1 hour to form solution A, add the weighed butyl titanate into solution A, stir for 30 minutes to form solution B, and set aside;

[0037] Step 3: Add the acetylacetone weighed in step 1 into solution B, then add an appropriate amount of ethylene glycol methyl ether to dilute solution B until the molar concentration of strontium acetate reaches 0.3mol / L, then stir for 6-8 hours, and filter Remove the ...

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Abstract

A self-doped strontium titanate ferroelectric film and a preparation method thereof. The self-doped strontium titanate ferroelectric film is composed of a material with a molecular formula of SrTi1+xO3, wherein the value range of x is 0.015-0.02. The preparation method of the film comprises the following steps: weighing strontium acetate, tetrabutyl titanate, and acetylacetone according to a mole ratio of 1:(1.015-1.02):0.7, completely dissolving strontium acetate in acetic acid, then adding ethylene glycol monomethyl ether, tetrabutyl titanate, and acetylacetone, diluting the solution with ethylene glycol monomethyl ether to obtain a mole concentration of strontium acetate of 0.3 mol / L, stirring to obtain a solution C; dropping the solution C on a substrate in a spin coater, performing spin coating, drying and thermolysis till the thickness of the SrTi1+xO3 dry film reaches 300 nm, and performing annealing to obtain the SrTi1+xO3 film. According to the invention, ferroelectricity is induced by excessive Ti and in an anoxic atmosphere, and ferroelectric hysteresis loops are measured at a temperature above zero or even at room temperature; no introduction of other element is necessary, and the method is simple.

Description

technical field [0001] The invention relates to a ferroelectric thin film in the field of functional materials, in particular to a self-doped strontium titanate ferroelectric thin film and a preparation method thereof. Background technique [0002] Quantum paraelectric strontium titanate (SrTiO 3 ) As a widely used electronic functional material, it has the advantages of high dielectric constant, low dielectric loss and thermal stability, and is widely used in electronics, machinery and ceramics industries. Ferroelectric thin films have good properties such as ferroelectricity, piezoelectricity, pyroelectricity and nonlinear optics. Among them, strontium titanate ferroelectric thin films can be widely used in microelectronics, integrated optical information storage and microelectromechanical systems. and other fields. The study found that strontium titanate is a typical precursor ferroelectric material. When the temperature drops from room temperature to liquid helium temp...

Claims

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Application Information

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IPC IPC(8): C04B35/47C04B35/622
Inventor 王晓飞胡秋波李新忠张超王赵武
Owner HENAN UNIV OF SCI & TECH
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