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A kind of optoelectronic device and its preparation method using colloidal NiO nanocrystalline thin film as hole transport layer

A hole transport layer, optoelectronic device technology, applied in semiconductor/solid-state device fabrication, organic light-emitting device fabrication/processing, organic semiconductor device fabrication/processing, etc. devices, etc., to achieve the effect of cost saving and simple preparation process

Active Publication Date: 2016-07-06
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The above-mentioned methods for preparing NiO hole transport layers have a common feature that the temperature in the preparation process is too high to prepare flexible photoelectric devices, which limits its further application.

Method used

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  • A kind of optoelectronic device and its preparation method using colloidal NiO nanocrystalline thin film as hole transport layer
  • A kind of optoelectronic device and its preparation method using colloidal NiO nanocrystalline thin film as hole transport layer
  • A kind of optoelectronic device and its preparation method using colloidal NiO nanocrystalline thin film as hole transport layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] Example 1 Flexible organic LED device using colloidal NiO nanocrystalline thin film as hole transport layer

[0045] 1) Add 1mmol of nickel stearate, 0.2mmol of lithium stearate, and 6mmol of stearyl alcohol into 10ml of 1-octadecene, put it into a 50ml flask, heat up to 80°C under the protection of an inert gas, and pump Vacuum for 30 minutes; under the protection of inert gas, heat up to 280°C and keep warm for 120 minutes, cool to room temperature, add precipitant ethanol and centrifuge to obtain colloidal NiO nanocrystals;

[0046] 2) Mix 20mg colloidal NiO nanocrystals with 0.5ml chloroform to obtain a colloidal NiO nanocrystal solution, which is spin-coated on an ITO / PET substrate (commercially available) at a speed of 3000 Rpm / min to form a uniform and flat film, and then Annealed in air at 90°C for 120 minutes, and then treated with ozone for 10 minutes to obtain a colloidal NiO nanocrystalline film on the substrate;

[0047] 3) Mix 14mg of MEH-PPV (manufacture...

Embodiment 2

[0056] Example 2 Flexible organic LED device using colloidal NiO nanocrystalline thin film as hole transport layer

[0057] 1) Mix 15 mg of the colloidal NiO nanocrystals prepared in Example 1 with 0.5 ml of hexane to obtain a colloidal NiO nanocrystal solution, which is spin-coated on the ITO / PET flexible substrate at a speed of 1500 Rpm / min to form a uniform and smooth The film was then annealed in air at 90°C for 140 minutes, and then treated with ozone for 10 minutes to obtain a colloidal NiO nanocrystalline film on the substrate;

[0058] 2) Mix 16mg of MEH-PPV with 1ml of dichlorobenzene to obtain a solution of MEH-PPV luminescent material, and spin-coat it on the colloidal NiO nanocrystalline film obtained in step 2) at a speed of 1500 Rpm / min to form a MEH-PPV luminescent layer;

[0059] 3) Prepare ZnO film as electron transport layer by thermal evaporation on MEH-PPV light-emitting layer;

[0060] 4) Prepare metal Al cathode on ZnO film.

[0061] The physical workin...

Embodiment 3

[0062] Example 3 Flexible organic solar cell using colloidal NiO nanocrystalline thin film as hole transport layer

[0063] 1) Mix the colloidal NiO nanocrystals prepared in 60 mg of Example 1 with 1ml tetrachlorethylene to obtain a NiO nanocrystal solution, which is spin-coated on an ITO / PET substrate at a speed of 4000 Rpm / min to form a uniform and flat film, and then Annealed in air at 90°C for 120 minutes, and then treated with ozone for 10 minutes to obtain a colloidal NiO nanocrystalline film on the substrate;

[0064] 2) 20mgTQ1:PC 71 BM (manufacturer: Solenne) is mixed with 1ml dichlorobenzene to obtain TQ1:PC 71 The solution of BM light-absorbing material is spin-coated on the colloidal NiO nanocrystalline film obtained in step 2) at a speed of 1200 Rpm / min to form TQ1:PC 71 BM light absorbing layer;

[0065] 3) In TQ1:PC 71 On the BM light absorbing layer, a ZnO thin film was prepared by thermal evaporation as an electron transport layer;

[0066] 4) Metal Al ca...

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PUM

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Abstract

The invention discloses a photoelectric device using a colloidal NiO nanocrystal thin film as a hole transport layer. The photoelectric device includes an anode, a hole transport layer, an active layer, an electron transport layer and a cathode from bottom to top. The hole transport layer is a NiO colloidal nanocrystal film. The invention also discloses a preparation method of the optoelectronic device, the preparation process is simple and the cost is saved, and it is especially suitable for preparing a flexible optoelectronic device. The colloidal NiO nanocrystals prepared by the present invention have both the properties of solid nano NiO materials and the characteristics of low-temperature solution process processing, and have higher stability and work function, and are easier to transport holes. As a hole transport layer, not only can Reducing the interface impedance of the device can significantly improve the hole transport efficiency, thereby improving the performance of the optoelectronic device.

Description

technical field [0001] The invention relates to the field of photoelectric devices, in particular to a photoelectric device using a colloidal NiO nanocrystal thin film as a hole transport layer and a preparation method thereof. Background technique [0002] At present, optoelectronic devices with layered thin-film structures have aroused great interest. A flexible device is formed on the substrate. [0003] Among the optoelectronic devices with layered thin film structures, the two most common types are LEDs and solar cells. In order to improve the device performance of LEDs and solar cells, electron or hole transport layers are often introduced between the electrodes and the active layer to improve the carrier transport efficiency. The material used as the hole transport layer is often required to have a high work function, especially in flexible devices, it must also meet the process requirements for easy low-temperature solution processing. NiO is a P-type semiconducto...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/14H01L51/42H01L31/0264H01L31/18H01L33/00H01L51/48
CPCH10K71/00H10K30/00H10K50/15H10K2102/311Y02E10/549Y02P70/50
Inventor 金一政梁骁勇叶志镇
Owner ZHEJIANG UNIV