A Normal Incidence Immersion Uncooled Thin Film Infrared Detector
An infrared detector and immersion technology, applied in the field of infrared detectors, can solve the problems of low response rate and detection rate, narrow response band, large time constant, etc., to improve the response rate, wide response band, and small time constant. Effect
Active Publication Date: 2017-01-25
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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Problems solved by technology
It solves the problems of low responsivity and detection rate, large time constant, and narrow response band of traditional uncooled thin-film devices, and expands the application range of uncooled thin-film infrared detectors
Method used
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Embodiment
[0030] Based on Mn 1.56 co 0.96 Ni 0.48 o 4 Heat sensitive thin film material, develop the detector structure provided by the present invention. Specifically, it is realized through the following steps.
[0031] (1) Mn 1.56 co 0.96 Ni 0.48 o 4 Fabrication of Sensitive Elements of Thin Film Devices
[0032] 1) Prepare the precursor solution. Weigh 91.76g, 57.39g, and 28.66g of manganese acetate tetrahydrate, cobalt acetate tetrahydrate, and nickel acetate tetrahydrate respectively, and dissolve the powder by adding 400ml of acetic acid and 100ml of water for every 100g of acetate, and choose a pore size of 0.45μm filter membrane, filter out the impurity precipitate in the solution, and obtain Mn 1.56 co 0.96 Ni 0.48 o 4 precursor solution.
[0033] 2) Preparation of Mn 1.56 co 0.96 Ni 0.48 o 4 oxide film. Mn with a thickness of about 8 μm was prepared on a 100 μm amorphous alumina substrate by chemical solution method 1.56 co 0.96 Ni 0.48 o 4 film.
[00...
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The invention discloses a normal-incidence immersed non-refrigeration film type infrared detector. A germanium single crystal hemisphere lens is arranged on the surface of sensitive element film of the infrared detector and can carry out convergence on infrared signals, and the sensitive element film of the infrared detector is arranged on the condensation center focus of the germanium single crystal hemisphere lens. According to the structure of devices of the normal-incidence immersed non-refrigeration film type infrared detector, the manufacturing technology is simple, only one time of graph photoetching, two times of slicing and two times of mask gold plating need to be carried out, electrodes of the film type infrared detector can be led from the film surface to the reverse side of a substrate, normal-incidence immersed detection of the infrared sensitive element film is achieved, the phenomenon that light loss is caused due to the fact that infrared radiation signals are reflected and absorbed by the substrate under the condition of reverse incidence is avoided, the responsivity and the detectivity of the film type infrared detector are greatly improved, and the response time of the devices is shortened; according to the designed device structure, wire leading and packaging are facilitated, and the devices can be applied to mass production of the normal-incidence immersed non-refrigeration film type infrared detector.
Description
technical field [0001] The invention relates to an infrared detector, in particular to a normal-incidence submerged non-refrigerated thin-film infrared detector. Background technique [0002] The uncooled infrared detector is an important infrared detector. Compared with the photonic infrared detector, it has the advantages of low preparation cost, no need for low-temperature cooling system, wide-band response, ability to work at high temperature, and simple device packaging. It has a wide range of applications in military, civil and industrial fields. In the past, research on uncooled infrared detectors has mainly focused on bulk materials. Due to the influence of defects such as incomplete contact between grains and voids in bulk materials, the repeatability and stability of the device are poor, and the device has unfavorable factors such as large heat capacity and slow response speed. With the continuous development of thin film growth technology and microelectronics te...
Claims
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IPC IPC(8): H01L31/09H01L31/0232H01L31/18
CPCH01L31/0232H01L31/02327H01L31/09Y02P70/50
Inventor 黄志明欧阳程周炜吴敬高艳卿黄敬国褚君浩
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI